A non-linear high-frequency amplifier arrangement suitable for generating power outputs >1kW at frequencies of >1MHz for plasma excitation is provided. The arrangement includes two LDMOS transistors each connected by their source connection to aground connection point, where the LDMOS transistors have the same design and are arranged in an assembly, a power transformer whose primary winding is connected to drain connections of the LDMOS transistors, a signal transformer whose secondary winding is connected by a first end to a gate connection of one LDMOS transistor and by a second end to a gate connection of the other LDMOS transistor, and a feedback path from the drain connection to the gate connection of each of the LDMOS transistors.

A non-linear high-frequency amplifier arrangement suitable for generating power outputs 1 kW at frequencies of 1 MHz for plasma excitation is provided. The arrangement includes two LDMOS transistors each connected by their source connection to aground connection point, where the LDMOS transistors have the same design and are arranged in an assembly, a power transformer whose primary winding is connected to drain connections of the LDMOS transistors, a signal transformer whose secondary winding is connected by a first end to a gate connection of one LDMOS transistor and by a second end to a gate connection of the other LDMOS transistor, and a feedback path from the drain connection to the gate connection of each of the LDMOS transistors.

An impedance control unit is disclosed. Also disclosed are a balun unit, an electronic device, and a Doherty amplifier, each comprising the impedance control unit.

The impedance control unit comprises a pair of re-entrant type coupled lines, and further comprises an electrical short between the intermediate plane and the ground plane arranged locally inside the pair of coupled lines.

The present invention relates to a push-pull amplifying unit and a Doherty amplifier. The push-pull amplifying unit comprises a first amplifier, a second amplifier, a first shunt inductor, and a second shunt inductor. The first and second shunt inductors have mutually connected second terminals and are inductively coupled to increase the impedance between the first output and the virtual ground and the impedance between the second output and the virtual ground at a fundamental frequency of a signal to be amplified by the push-pull amplifying unit relative to those impedances in the absence of said inductive coupling, and to decrease the impedance between the first output and the virtual ground and the impedance between the second output and the virtual ground at a second harmonic frequency of the signal to be amplified relative to those impedances in the absence of said inductive coupling.

High-frequency amplifier apparatuses suitable for producing output powers of at least 1 kW at frequencies of at least 2 MHz for plasma excitation are disclosed. These high-frequency amplifiers include two transistors, the source or emitter connections of which are each connected to a ground connection point. The transistors can have an identical design and are arranged on a multilayer printed circuit board. The apparatus also includes a power transformer, the primary winding of which is connected to the drain or collector connections of the transistors. The primary winding and the secondary winding of the power transformer are each in the form of planar conductor tracks which are arranged in different upper layers of the multilayer printed circuit board.

A method for controlling an envelope shape of an output signal outputted by a driver of a wireless transmitter includes supplying a first voltage level and a second voltage level, generating a filtered envelope reference signal by switching between the first voltage level and the second voltage level, in conjunction with low-pass filtering the transitions between the first voltage level and the second voltage level, generating a driver supply voltage following the filtered envelope reference signal, regulated in a manner adapted to supply the driver, and controlling the envelope shape of the output signal by supplying the driver with the driver supply voltage.

An audio amplifier has an input for an audio signal being amplified and an output powering a load on the basis of the amplified audio signal; a generator of reference voltage of very high linearity and low output impedance, able to receive, as input, the audio signal to be amplified; a power current generator including a power voltage generator whose output is connected to the output of the reference voltage generator through a coupling inductance; and a signal adder introducing, for its control, as input to the power current generator, a signal representative of the current provided as output by the reference voltage generator. The signal adder is able to introduce a signal $\left(L\frac{{\mathrm{di}}_{\mathrm{LOAD}}}{\mathrm{dt}}\right)$
representative of the product of the value of the coupling inductance and the drift with respect to time of the current $\left(\frac{{\mathrm{di}}_{\mathrm{LOAD}}}{\mathrm{dt}}\right)$
provided to the load.

The present disclosure provides a detailed description of techniques for implementing a low power buffer with dynamic gain control. More specifically, some embodiments of the present disclosure are directed to a buffer having a gain boost configuration and a current shunt circuit to control the gain of a respective gain boosting transistor of the gain boost configuration. The current shunt circuit and resulting gain are dynamically controlled by a gain control signal such that the buffer gain can be adjusted to within an acceptable range of the target gain for the current operating and device mismatch conditions. In one or more embodiments, the gain boost configuration with dynamic gain control can be deployed in a full differential implementation. Both analog and digital dynamic calibration and control techniques can be used to provide the gain control signals to multiple current shunt circuits and multiple buffers.

An operational amplifier includes an output node; an output stage, comprising a plurality of output current paths and a plurality of control nodes, wherein the plurality of control nodes are respectively coupled to the plurality of output current paths, and the plurality of output current paths are coupled to the output node and respectively coupled to a plurality of power supply sources providing different voltages; and a selecting unit, configured to couple an internal output node of the operational amplifier to one of the plurality of control nodes of the output stage.

A non-linear high-frequency amplifier arrangement suitable for generating power outputs 1 kW at frequencies of 1 MHz for plasma excitation is provided. The arrangement includes two LDMOS transistors each connected by their source connection to aground connection point, where the LDMOS transistors have the same design and are arranged in an assembly, a power transformer whose primary winding is connected to drain connections of the LDMOS transistors, a signal transformer whose secondary winding is connected by a first end to a gate connection of one LDMOS transistor and by a second end to a gate connection of the other LDMOS transistor, and a feedback path from the drain connection to the gate connection of each of the LDMOS transistors.