An amplifier circuit includes an input amplifier; an output unity gain buffer; and a second unity gain buffer. The output unity gain buffer and the second unity gain buffer are each configured to receive a signal from an input amplifier. The output unity gain buffer is configured to provide an output voltage to an amplifier output, and the second unity gain buffer is configured to provide a bootstrap signal to the input amplifier. A unity gain amplifier includes an input unity gain amplifier; and an output unity gain buffer and a second unity gain buffer. The buffers are configured to receive a signal from an input amplifier. The output unity gain buffer is configured to provide an output voltage to an amplifier output, and the second unity gain buffer is configured to provide a bootstrap signal to the input unity gain amplifier.

A bias circuit for a bipolar RF amplifier is described. The bias circuit includes a current source coupled to a bias network. The bias network supplies a base current to the transistors in the amplifier circuit of the bipolar RF amplifier. The bias circuit includes a buffer coupled to the bias network and to the bipolar RF amplifier. The buffer provides additional base current to the amplifier circuit of bipolar RF amplifier and sinks avalanche current generated by the amplifier circuit of the bipolar RF amplifier.

A wireless receiver and a wireless reception method provide: to determine a gain based on a first resistor having a first temperature characteristic and a second resistor having a second temperature characteristic different from the first resistance; to output an output of the first resistor and an output of the second resistor, or a ratio between the output of the first resistor and the output of the second resistor; and to switches the gain of the first circuit based on the outputs or the ratio between the outputs.

A wireless receiver and a wireless reception method provide: to determine a gain based on a first resistor having a first temperature characteristic and a second resistor having a second temperature characteristic different from the first resistance; to output an output of the first resistor and an output of the second resistor, or a ratio between the output of the first resistor and the output of the second resistor; and to switches the gain of the first circuit based on the outputs or the ratio between the outputs.

A system for generating a radio frequency (RF) signal at a drive frequency and a high voltage. The system includes a RF amplifier to amplify the voltage of a drive signal having a selected RF frequency. The amplified drive signal is used to drive a resonator to generate the RF signal such that the resonant frequency is the same or substantially the same as the drive frequency. A resonance tuning controller compares the drive frequency and the resonant frequency. If the resonant frequency and drive frequency are different, a temperature changing element is controlled to either increase heat or decrease heat radiating toward a tuning component with a resonance parameter that varies with temperature. For example, the heat may change the capacitance of the tuning capacitor causing a change in the resonant frequency of the resonator.

A system for generating a radio frequency (RF) signal at a drive frequency and a high voltage. The system includes a RF amplifier to amplify the voltage of a drive signal having a selected RF frequency. The amplified drive signal is used to drive a resonator to generate the RF signal such that the resonant frequency is the same or substantially the same as the drive frequency. A resonance tuning controller compares the drive frequency and the resonant frequency. If the resonant frequency and drive frequency are different, a temperature changing element is controlled to either increase heat or decrease heat radiating toward a tuning component with a resonance parameter that varies with temperature. For example, the heat may change the capacitance of the tuning capacitor causing a change in the resonant frequency of the resonator.

An amplifier circuit includes a first transistor; a first resistor to which a first potential is applied, the first resistor being connected to an emitter of the first transistor; a second resistor to which a second potential is applied, the second resistor being connected to a collector of the first transistor; and a signal control circuit configured to apply, to a base of the first transistor, a voltage that has been level-shifted based on an average value of a voltage at the collector of the first transistor, the signal control circuit being provided between the collector and the base of the first transistor.

Design of ultra broadband transimpedance amplifiers (TIA) for optical fiber communications is disclosed. In one embodiment, a TIA comprises a g.sub.m-boosted dual-feedback common-base stage, a level shifter and an RC-degenerated common-emitter stage, and a first emitter-follower stage, wherein the first emitter follower stage is inductively degenerated. An output of the TIA is buffered using a second emitter-follower stage.

Logarithmic current-to-voltage converters with emitter resistance compensation are disclosed herein. In certain embodiments, a logarithmic current-to-voltage converter includes a logarithmic bipolar transistor that converts an input current to a logarithmic voltage, and an emitter resistance compensation circuit that includes a replica of the logarithmic bipolar transistor. The emitter resistance compensation circuit processes a copy of the input current to generate an emitter resistance compensation signal that adjusts the logarithmic voltage to correct for an error introduced by an emitter resistance of the logarithmic bipolar transistor. By providing emitter resistance compensation in this matter, logarithmic current-to-voltage conversion with high accuracy and low log error is achieved.

A semiconductor substrate includes emitter electrodes for multiple high-frequency amplifying transistors. An insulating substrate includes multiple land electrodes, ground electrodes, and multiple inductor electrodes. The land electrodes are formed on the front surface or near the front surface of the insulating substrate, and are joined to the respective emitter electrodes. The ground electrodes are formed inside the insulating substrate. Each of the inductor electrodes couples a corresponding one of the land electrodes to any of the ground electrodes in such a manner that the lengths of the coupling to the ground electrodes are individually determined.