Amplifiers with wide input range and low input capacitance are provided. In certain embodiments, an amplifier input stage includes a pair of input terminals, a pair of n-type input transistors, a first pair of isolation switches connected between the input terminals and the n-type input transistors, a pair of p-type input transistors, and a second pair of isolation switches connected between the input terminals and the p-type input transistors. The amplifier input stage further includes a control circuit that determines whether to use the n-type input transistors and/or the p-type input transistors for amplification based on a detected common-mode voltage of the input terminals. The control circuit opens the first pair of isolation switches to decouple the input terminals from the n-type input transistors when unused, and opens the second pair of isolation switches to decouple the input terminals from the p-type input transistors when unused.

A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. A output passive network can further generate a flat-phase response between dual resonances of operation.

A successive approximation analog-to-digital with an input for receiving an input analog voltage, and an amplifier with a first set of electrical attributes in a sample phase and a second set of electrical attributes, differing from the first set of electrical attributes, in a conversion phase.

A broadband power amplifier circuit is disclosed for providing load modulation, and includes an active element for receiving an impedance matched signal and for amplifying the impedance matched signal to supply an amplified signal, and an output matching network having a load impedance and coupled to the active element for receiving the amplified signal, the output matching network matches the load impedance to an optimum load impedance of the active element.

Amplifiers with wide input range and low input capacitance are provided. In certain embodiments, an amplifier input stage includes a pair of input terminals, a pair of n-type input transistors, a first pair of isolation switches connected between the input terminals and the n-type input transistors, a pair of p-type input transistors, and a second pair of isolation switches connected between the input terminals and the p-type input transistors. The amplifier input stage further includes a control circuit that determines whether to use the n-type input transistors and/or the p-type input transistors for amplification based on a detected common-mode voltage of the input terminals. The control circuit opens the first pair of isolation switches to decouple the input terminals from the n-type input transistors when unused, and opens the second pair of isolation switches to decouple the input terminals from the p-type input transistors when unused.

An apparatus for turning off a cascode amplifier having a common-gate transistor and a common-source transistor is disclosed that includes the cascode amplifier, a feedback circuit, and a bias circuit. The feedback circuit is configured to receive a drain-voltage from the drain of the common-source transistor when the common-source transistor is switched to a first OFF state and produce a first feedback signal. The drain-voltage is equal to a source voltage of the common-gate transistor and the drain-voltage increases in response to switching the common-source transistor to the first OFF state. The bias circuit is configured to receive the first feedback signal and produce a bias-voltage. A first gate-voltage is produced from the bias-voltage. The cascode amplifier is configured to receive the first gate-voltage and a second gate-voltage. The common-gate transistor is configured to switch to a second OFF state in response to receiving the second gate-voltage.

Radio frequency (RF) power amplifier architectures and circuits providing compensated current and gain from turn-on to end of long signal burst intervals to counteract amplifier transistor thermal rise due to self-heating at turn-on. The RF receiver circuit may be implemented as one of a single chip device or as part of an integrated system of components for use in mobile communication systems.

A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. An output passive network can further generate a flat-phase response between dual resonances of operation.

Various examples are directed to a circuit for biasing a power amplifier (PA). The circuit may comprise a first isolated power supply comprising a first DC output and a first common output as well as a second isolated power supply comprising a second DC output and a second common output. The second DC output may be electrically coupled to the first common output. The circuit may also comprise a switch network that is configurable to a first state in which the first DC output is provided at a circuit output and to a second state in which the second DC output is provided at the circuit output.

A successive approximation analog-to-digital with an input for receiving an input analog voltage, and an amplifier with a first set of electrical attributes in a sample phase and a second set of electrical attributes, differing from the first set of electrical attributes, in a conversion phase.