A resonance device is provided that includes a lower cover; an upper cover coupled to the lower cover; and a resonator that has vibration arms that generate bending vibration in an interior space provided between the lower cover and the upper cover. Moreover, the vibration arms have distal ends provided with metal films on a side that faces the upper cover, and a gap is provided between the distal ends of the vibration arms and the upper cover that is larger than a gap between the distal ends of the vibration arms and the lower cover.

A method for manufacturing a piezoelectric resonator. The method includes: depositing a piezoelectric layer and forming a recess in a lateral area in such a way that a silicon functional layer is exposed inside the recess, forming a silicide layer on a surface of the silicon functional layer exposed inside the recess, forming a diffusion barrier layer on the silicide layer, depositing and structuring a first and second metallization layer in such a way that a supply line and two connection elements are formed, forming the oscillating structure by structuring the silicon functional layer, the silicon functional layer of the oscillating structure being able to be electrically contacted via the first connection element and forming a lower electrode of the resonator, the first metallization layer of the oscillating structure being able to be electrically contacted via the second connection element and forming an upper electrode of the resonator.

A piezoelectric MEMS resonator is provided. The resonator comprises a single crystal silicon microstructure suspended over a buried cavity created in a silicon substrate and a piezoelectric resonance structure located on the microstructure. The resonator is designed and fabricated based on porous silicon related technologies including selective formation and etching of porous silicon in silicon substrate, porous silicon as scarified material for surface micromachining and porous silicon as substrate for single crystal silicon epitaxial growth. All these porous silicon related technologies are compatible with CMOS technologies and can be conducted in a standard CMOS technologies platform.

A resonance device that includes a MEMS substrate that includes a resonator, a top cover having a silicon oxide film on a surface thereof that faces the MEMS substrate, and a bonding part that bonds the MEMS substrate and the top cover to each other so as to seal a vibration space of the resonator. The silicon oxide film includes a through hole that is formed along at least part of the periphery of the vibration space when the top cover is viewed in a plan view and that penetrates to a surface of the top cover. The through hole includes a first metal layer.

A resonance device is provided that includes a first substrate with a resonator having an upper electrode, a second substrate that is disposed such that a first surface faces the first substrate with the resonator therebetween, a first terminal that is disposed on a second surface of the second substrate and that is electrically connected to the upper electrode, a second terminal that is disposed on the second surface and that applies a reference electric potential to the resonator, and an extended wiring line that is connected to the first terminal electrically and that extends on the second surface to an outer edge.

A communications module includes a module substrate composed of a plurality of insulating layers, a plurality of wiring layers, and a plurality of wiring vias; and a filter module disposed on the module substrate. At least one of the wiring layers overlaps the filter module in a thickness direction of the module substrate and is connected to a ground potential to function as a ground layer, and an entirety of at least one of the wiring layers and at least one of the wiring vias disposed in a first region in the thickness direction of the module substrate between the filter module and the ground layer are electrically connected to the filter module.

A method for manufacturing a vibrator device including a base portion having a first surface, a support portion protruding from the first surface in a normal direction of the first surface, and a vibrating arm that extends from the support portion along the first surface and that has a gap with the first surface, the method including: preparing a single crystal silicon substrate having a flat plate shape; forming, by dry etching, at least two bottomed long grooves arranged at a predetermined interval on a second surface which is one surface of the silicon substrate; and forming the vibrating arm between the second surface and a bottom surface of the long groove in a thickness direction of the silicon substrate by wet etching side surfaces of the long groove and communicating the two long grooves with each other.

A resonator device includes a base made of silicon and provided with a first surface and a second surface in a front-back relationship with each other, a resonator element arranged on the first surface, a lid which is made of silicon, which has a third surface arranged at the first surface side to be faced to the first surface, and a recessed part having a bottom surface and opening on the third surface, and the third surface of which is bonded to the first surface, and a getter layer which is arranged on the bottom surface of the recessed part, and which is provided with a gas adsorptive property, wherein the bottom surface of the recessed part is higher in surface roughness Ra than the third surface.

A MEMS device may include: (i) a lower cavity, including a first island, formed within a first layer of the MEMS device; (ii) an upper cavity, including a second island, formed within a second layer of the MEMS device; (iii) a MEMS resonating element arranged in a device layer of the MEMS device and anchored via the first and second islands; (iv) a first set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an in-plane mode that is arranged in the device layer of the MEMS device; and (v) a second set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an out-of-plane mode that is electrically isolated from the first set of electrodes and located in the first or second layer of the MEMS device, and wherein the out-of-plane mode is a torsional mode or a saddle mode.

A microelectromechanical system (MEMS) resonator includes a substrate having a substantially planar surface and a resonant member having sidewalls disposed in a nominally perpendicular orientation with respect to the planar surface. Impurity dopant is introduced via the sidewalls of the resonant member such that a non-uniform dopant concentration profile is established along axis extending between the sidewalls parallel to the substrate surface and exhibits a relative minimum concentration in a middle region of the axis.