A pseudo resistance circuit is disclosed that is capable of suppressing fluctuation in resistance value with fluctuation in process or temperature and facilitating adjustment. The pseudo resistance circuit includes a first MOSFET, a second MOSFET, a first current source which generates a first current substantially proportional to absolute temperature, and voltage source which generates a first voltage, which is a substantially linear function of absolute temperature. The gate of the first MOSFET and the gate of the second MOSFET are connected together, the second MOSFET is diode-connected, the first current is supplied to the drain of the second MOSFET, the first voltage is applied to the source of the second MOSFET, and a resistor having a resistance value according to the gate voltage of the first MOSFET is formed between the drain and the source of the first MOSFET.

Certain aspects of the present disclosure generally relate to generating a large electrical resistance. One example circuit generally includes a first transistor having a gate, a source connected with a first node of the circuit, and a drain connected with a second node of the circuit. The circuit may also include a voltage-limiting device connected between the gate and the source of the first transistor, wherein the device, if forward biased, is configured to limit a gate-to-source voltage of the first transistor such that the first transistor operates in a sub-threshold region. The circuit may further include a second transistor configured to bias the voltage-limiting device with a current, wherein a drain of the second transistor is connected with the gate of the first transistor, a gate of the second transistor is connected with the first node, and a source of the second transistor is connected with an electric potential.

A non-linear impedance terminates a transmission line. The non-linear impedance may be implemented with a back-to-back connected inverter pair. The pair acts as a non-linear resistor. A process, voltage, temperature (PVT) tracking circuit may also be provided to improve PVT tracking, with resistance of transistors locked to a calibrated resistor. The replica circuit does not appear in the signal path, and does not add capacitive load.

A pseudo resistor with tunable resistance including a first transistor and a second transistor is provided. The first transistor has a first terminal, a second terminal and a control terminal. The first terminal of the first transistor serves as a first terminal of the pseudo resistor. The control terminal of the first transistor receives a control voltage. The first transistor is controlled by the control voltage, such that the first transistor operates in a weak inversion region. The second transistor has a first terminal, a second terminal and a control terminal. The first terminal of the second transistor is coupled to the second terminal of the first transistor. The second terminal of the second transistor and the control terminal of the second transistor are coupled to each other to serve as a second terminal of the pseudo resistor with tunable resistance. The second transistor operates in the weak inversion region.

A non-linear impedance terminates a transmission line. The non-linear impedance may be implemented with a back-to-back connected inverter pair. The pair acts as a non-linear resistor. A process, voltage, temperature (PVT) tracking circuit may also be provided to improve PVT tracking, with resistance of transistors locked to a calibrated resistor. The replica circuit does not appear in the signal path, and does not add capacitive load.

A pseudo resistance circuit is disclosed that is capable of suppressing fluctuation in resistance value with fluctuation in process or temperature and facilitating adjustment. The pseudo resistance circuit includes a first MOSFET, a second MOSFET, a first current source which generates a first current substantially proportional to absolute temperature, and voltage source which generates a first voltage, which is a substantially linear function of absolute temperature. The gate of the first MOSFET and the gate of the second MOSFET are connected together, the second MOSFET is diode-connected, the first current is supplied to the drain of the second MOSFET, the first voltage is applied to the source of the second MOSFET, and a resistor having a resistance value according to the gate voltage of the first MOSFET is formed between the drain and the source of the first MOSFET.

A method and system of providing an active differential resistor. The active differential resistor includes a diode having a first node and a second node. There is a capacitor coupled in series between the first node of the diode and an input of the active differential resistor. There is a current source coupled across the first node and the second node of the diode and configured to forward bias the diode such that a Johnson-Nyquist noise of the active differential resistor is replaced by a shot noise.

A tunable impedance simulator and impedance multiplier circuit and a system for configuring a second generation voltage-mode conveyor circuit (VCII) as the tunable impedance simulator and impedance multiplier are described. The tunable impedance simulator and impedance multiplier circuit includes one VCII having a positive input terminal connected to a voltage source, a negative input terminal connected to the voltage source, and an impedance terminal Z.sub.0. The impedance terminal Z.sub.0 can be either positive or negative. When the impedance terminal Z.sub.0 is positive, a positive active inductor, a positive capacitance multiplier, and a positive resistance multiplier may be implemented. When the impedance terminal Z.sub.0 is negative, a negative active inductor, a negative capacitance simulator, and a negative resistance simulator may be implemented.

A pseudo resistance circuit includes a first gate voltage adjustment circuit that adjusts respective currents of first and second current sources and also adjusts a gate voltage of a second field effect transistor to equalize or substantially equalize a drain voltage of the second field effect transistor and a voltage of a first end portion of a reference resistance element and controls a drain voltage of a first field effect transistor and the drain voltage of the second field effect transistor to maintain a constant or substantially constant relationship with each other; and a second gate voltage adjustment circuit that adjusts a gate voltage of the first field effect transistor to control the gate voltage of the second field effect transistor and the gate voltage of the first field effect transistor to maintain a constant or substantially constant relationship with each other.

A method and system of providing an active differential resistor. The active differential resistor includes a diode having a first node and a second node. There is a capacitor coupled in series between the first node of the diode and an input of the active differential resistor. There is a current source coupled across the first node and the second node of the diode and configured to forward bias the diode such that a Johnson-Nyquist noise of the active differential resistor is replaced by a shot noise.