In a method for actuating reverse-conducting semiconductor switches, a plurality of reverse-conducting semiconductor switches is arranged in a parallel circuit. Gate contacts of switching elements of at least two of the plurality of reverse-conducting semiconductor switches are controlled by actuating the at least two of the reverse-conducting semiconductor switches at least intermittently with different voltages, thereby allowing to influence a behavior of the switching elements of the at least two of the reverse-conducting semiconductor switches in IGBT (Insulated-Gate-Bipolar-Transistor) and a behavior in diode mode.

A semiconductor device includes a plurality of switching elements electrically connected in parallel with each other, a control unit that outputs a control signal for controlling a current supplied to each of the switching elements, and a temperature estimation unit that estimates a temperature difference between the switching elements. When an estimated temperature difference becomes equal to or higher than a predetermined threshold temperature, the control unit shifts an operation mode to a stop mode for stopping driving of a switching element having a temperature higher than the other.

A converter comprises a first switching element and a second switching element coupled between an input power source and an output capacitor and an inductor coupled to a common node of the first switching element and the second switching element, wherein the second switching element comprises a first diode and a first switch connected in series between a first terminal and a second terminal of the second switching element and a second diode connected between the first terminal and the second terminal of the second switching element.

The invention relates to a topological semiconductor switch for power electronics that has at least two power semiconductors, in particular power transistors, characterized in that the topological semiconductor switch has at least one first power semiconductor containing a first semiconductor material, and at least one second power semiconductor containing a second semiconductor material. The invention also relates to a motor vehicle.

A multi-sense circuit includes a transistor circuit having sense nodes and a gate node, a peak detector having inputs coupled to the sense nodes of the transistor circuit and an output, and a control circuit having a gate control node coupled to the gate node of the transistor circuit and an overcurrent protection node coupled to the output of the peak detector.

A power module includes a plurality of power semiconductor devices. The plurality of power semiconductor devices includes an insulated gate bipolar transistor (IGBT) and a metal-oxide-semiconductor field-effect transistor (MOSFET) coupled in parallel between a first power switching terminal and a second power switching terminal. The IGBT and the MOSFET are silicon carbide devices. By providing the IGBT and the MOSFET together, a tradeoff between forward conduction current and reverse conduction current of the power module, the efficiency, and the specific current rating of the power module may be improved. Further, providing the IGBT and the MOSFET as silicon carbide devices may significantly improve the performance of the power module.

A power device driving apparatus drives a plurality of power devices including first and second power devices. In the apparatus, a plurality of drive circuits are separately provided for at least the first power device and the second power device and output drive signals to the respective power devices. The isolated power supply includes a first isolated power supply unit that supplies a first supply voltage, and a second isolated power supply unit that supplies a second supply voltage that is different from the first supply voltage. The plurality of drive circuits includes a first drive circuit that uses the first supply voltage supplied from the first isolated power supply unit to output the drive signal to the first power device, and a second drive circuit that uses the second supply voltage supplied from the second isolated power supply unit to output the drive signal to the second power device.

A semiconductor device includes a switching circuit that switches between conducting state and disconnected state. The switching circuit includes first and second switching elements electrically connected in parallel. The first switching element is an IGBT, and the second switching element is a MOSFET. When a current flowing in the switching circuit is less than a first current value, the second switching element has a lower voltage than the first switching element. When the current flowing in the switching circuit is not less than a second current value and not greater than a third current value, the threshold voltage of the second switching element ranges from 1.0 V to +0.4 V relative to the threshold voltage of the first switching element. The third current value is not greater than the rated current of the switching circuit. The first current value is less than the third current value.

A power module includes a plurality of power semiconductor devices. The plurality of power semiconductor devices includes an insulated gate bipolar transistor (IGBT) and a metal-oxide-semiconductor field-effect transistor (MOSFET) coupled in parallel between a first power switching terminal and a second power switching terminal. The IGBT and the MOSFET are silicon carbide devices. By providing the IGBT and the MOSFET together, a tradeoff between forward conduction current and reverse conduction current of the power module, the efficiency, and the specific current rating of the power module may be improved. Further, providing the IGBT and the MOSFET as silicon carbide devices may significantly improve the performance of the power module.

A plurality of drive circuits each drive a corresponding one of a plurality of power semiconductor elements connected in parallel. Each of the drive circuits includes a control command unit, a current detector, a differentiator, and an integrator. The current detector detects a gate current that flows into a gate terminal of a corresponding one of the power semiconductor elements after the control command unit outputs a turn-on command. The differentiator performs time differentiation of the gate current detected by the current detector. The integrator performs time integration of the gate current detected by the current detector. Based on a differential value and an integral value in each of the drive circuits, the determination unit determines whether an overcurrent state occurs or not in any of the plurality of power semiconductor elements.