A clamping circuit comprises a first field-effect transistor (FET) having a gate, a source, and a drain, a diode, a first voltage source, and coupling circuitry configured to couple the first voltage source to the drain of the first FET and the diode to the source of the first FET.

A clamping circuit comprises a first field-effect transistor (FET) having a gate, a source, and a drain, a diode, a first voltage source, and coupling circuitry configured to couple the first voltage source to the drain of the first FET and the diode to the source of the first FET.

A hybrid diode silicon on insulator front end module and related method are provided. The front end module includes a transmit branch that includes a transmit circuit and a receive branch that includes a receive circuit. The receive circuit includes a low noise amplifier, a pin diode including an anode and a cathode; and a switch. The anode of the pin diode is operatively connected to an antenna switch port and an input voltage source. The cathode of the pin diode is operatively connected to a cathode of the switch. Turning on the switch facilitates a drainage of residual electrical current at the pin diode.

Monolithic multi-throw diode switch structures are described. The monolithic multi-throw diode switches include a hybrid arrangement of diodes with different intrinsic regions. In one example, a method of manufacture of a monolithic multi-throw diode switch includes providing an intrinsic layer on an N-type semiconductor substrate, implanting a first P-type region to a first depth into the intrinsic layer to form a first PIN diode comprising a first effective intrinsic region of a first thickness, implanting a second P-type region to a second depth into the intrinsic layer to form a second PIN diode comprising a second effective intrinsic region of a second thickness, and forming at least one metal layer over the intrinsic layer to electrically couple the first PIN diode to a node between a common port and a first port of the switch.

Monolithic multi-throw diode switch structures are described. The monolithic multi-throw diode switches include a hybrid arrangement of diodes with different intrinsic regions. In one example, a method of manufacture of a monolithic multi-throw diode switch includes providing an intrinsic layer on an N-type semiconductor substrate, implanting a first P-type region to a first depth into the intrinsic layer to form a first PIN diode comprising a first effective intrinsic region of a first thickness, implanting a second P-type region to a second depth into the intrinsic layer to form a second PIN diode comprising a second effective intrinsic region of a second thickness, and forming at least one metal layer over the intrinsic layer to electrically couple the first PIN diode to a node between a common port and a first port of the switch.

An electronic circuit is disclosed. The electronic circuit includes: a half-bridge with a first transistor device (1) and a second transistor device (1a); a first biasing circuit (3) connected in parallel with a load path of the first transistor device (1) and comprising a first electronic switch (31); a second biasing circuit (3a) connected in parallel with a load path of the second transistor device (1a) and comprising a second electronic switch (31a); and a drive circuit arrangement (DRVC). The drive circuit arrangement (DRVC) is configured to receive a first half-bridge input signal (Sin) and a second half-bridge input signal (Sina), drive the first transistor device (1) and the second electronic switch (31a) based on the first half-bridge input signal (Sin), and drive the second transistor device (1a) and the first electronic switch (31) based on the second half-bridge input signal (Sina).

A device includes a first switch and a first diode connected in parallel between a midpoint and a first terminal of the hybrid power device, a second switch and a second diode connected in parallel between the midpoint and a second terminal of the hybrid power device, a third switch coupled between the first terminal and the second terminal, and a third diode connected between the first terminal and the second terminal.

A device includes a first switch and a first diode connected in parallel between a midpoint and a first terminal of the hybrid power device, a second switch and a second diode connected in parallel between the midpoint and a second terminal of the hybrid power device, a third switch coupled between the first terminal and the second terminal, and a third diode connected between the first terminal and the second terminal.

A hybrid diode silicon on insulator front end module and related method are provided. The front end module includes a transmit branch that includes a transmit circuit and a receive branch that includes a receive circuit. The receive circuit includes a low noise amplifier, a pin diode including an anode and a cathode; and a switch. The anode of the pin diode is operatively connected to an antenna switch port and an input voltage source. The cathode of the pin diode is operatively connected to a cathode of the switch. Turning on the switch facilitates a drainage of residual electrical current at the pin diode.

A driver circuit for switching edge modulation of a power switch. The driver circuit includes a first driver circuit input including a downstream input node, and a power switch including an upstream first gate node. A charging path including a charging resistor is situated between the input node and the first gate node. A discharging path including a discharging resistor is situated between the input node and the first gate node. A gate path is situated between the input node and the first gate node. A power switch transistor, whose gate is connected to the first gate node, is provided. A gate path includes a gate resistor. The driver circuit is configured so that, during a switching process of the power switch, the gate path is temporarily short-circuited either via the charging path or the discharging path, to increase the slope of the switching behavior of the power switch.