This application provides an interface circuit of a vehicle-mounted control unit comprising an H-bridge circuit, an input branch, and a pull-up network. An input end of the H-bridge circuit is connected to a controller 240, and an output end of the H-bridge circuit is connected to an interface port IO of the interface circuit. A first end of the input branch is connected to the interface port IO, and a second end of the input branch is connected to the controller.

A system includes a control unit configured to be electrically connected to an input of a memory via a communication interface. The control unit includes a first power supply sector configured to be powered when the control unit is in an operating mode and a second power supply sector configured to be powered when the control unit is in the operating mode and in a low consumption mode. In the first power supply sector, the control unit includes a first configuration circuit operating to configure a polarization value of the input of the memory via the communication interface for the operating mode. In the second power supply sector, the control unit includes a second configuration circuit operating to configure a polarization value of the input of the memory via the communication interface for the low consumption mode.

A method, system, and related component for detecting properness of a PG pin power-on timing sequence are provided. The method comprises: obtaining a pull-up level of a PG pin of a VR chip (S101); determining a value of a pull-up resistor of the PG pin, as a first resistance, when a current injected into the VR chip by using the pull-up level is equal to a maximum withstand current of the VR chip (S102); obtaining an equivalent resistance to ground when the PG pin is at a low level, and calculating, based on the equivalent resistance to ground, a value of the pull-up resistor of the PG pin, as a second resistance, when an output voltage of the PG pin is equal to a preset interference voltage limit value (S103); and outputting first prompt information when it is determined that an actual resistance of the pull-up resistor is lower than the first resistance or the second resistance (S104). The foregoing solution is applied, to determine whether a power-on timing sequence of PG pins in a VR chip is proper, thereby avoiding an incorrect action of a subsequent circuit.

A power chip with a switching converter, having: a power pin configured to receive an input voltage, an indicating signal generating circuit configured to generate an indicating signal; a communicating circuit configured to receive/transmit communication data; and a multi-function pin configured to receive/transmit communication data and/or to provide the indicating signal under certain conditions.

A memory system includes memory chips connected to each other. Each of the memory chips includes a memory array, a read/write data strobe pin, a look-up table storage device, a chip number identification circuit, and a control logic circuit. The memory array stores data. The read/write data strobe pin is connected to read/write data strobe pins of other memory chips. The look-up table storage device stores a plurality of trimming shift values related to a number of chip connections in advance. The chip number identification circuit identifies a current number of chip connections according to a state information, and finds a selected trimming shift value from the look-up table storage device. The control logic circuit transmits a data signal in response to a clock signal, and adjusts a setup hold time between the clock signal and the data signal according to the selected trimming shift value.

A positive-logic FET switch stack that does not require a negative bias voltage, and which can withstand application of a high voltage RF signal without requiring terminal capacitors. Some embodiments include a stack of FET switches, with at least one FET requiring a negative V.sub.GS to turn OFF and configured so as to not require a negative voltage, series-coupled on at least one end to an end-cap FET that turns OFF when the V.sub.GS of such end-cap FET is essentially zero volts, wherein at least one end-cap FET is configured to be coupled to a corresponding RF signal source and has a gate coupled to the corresponding RF signal source through an associated switch circuit. The switch circuit may include an NMOSFET and a PMOSFET, or a diode and an NMOSFET, or a diode and an NMOSFET and a PMOSFET.

A positive-logic FET switch stack that does not require a negative bias voltage, and which can withstand application of a high voltage RF signal without requiring terminal capacitors. Some embodiments include a stack of FET switches, with at least one FET requiring a negative V.sub.GS to turn OFF and configured so as to not require a negative voltage, series-coupled on at least one end to an end-cap FET that turns OFF when the V.sub.GS of such end-cap FET is essentially zero volts, wherein at least one end-cap FET is configured to be coupled to a corresponding RF signal source and has a gate coupled to the corresponding RF signal source through an associated switch circuit. The switch circuit may include an NMOSFET and a PMOSFET, or a diode and an NMOSFET, or a diode and an NMOSFET and a PMOSFET.

A memory device is provided. The memory device includes a bit cell having a first invertor connected between a first node and a second node and a second invertor connected between the first node and the second node. The first invertor and the second invertor are cross coupled at a first data node and a second data node. The memory device further includes a pull down circuit connected to the second node. The pull down circuit is operative to pull down a voltage of the second node below a ground voltage in response to an enable signal.

A memory device is disclosed. The memory device includes word lines, a tracking bit line and a word line driver. The word lines are configured to transmit word line signals to memory cells. The tracking bit line is coupled to a first plurality of tracking cells that are arranged in rows. The word line driver is coupled to the word lines and a control circuit that is coupled through the tracking bit line to the word lines. The word line driver is configured to control a falling edge of each of the word line signals, by receiving each corresponding tracking bit line signal of tracking bit line signals transmitted from the tracking bit line, based on a resistance of a length of the tracking bit line. The length is substantially distanced from each corresponding row of the rows to the control circuit. A method is also disclosed herein.

Systems and methods are provided for coupling two qubits. A first persistent current qubit is fabricated with a first superconducting loop interrupted by a first Josephson junction isolated by a first inductor and a second inductor from a second Josephson junction. A second persistent current qubit is fabricated with a second superconducting loop interrupted by a third Josephson junction isolated by a third inductor and a fourth inductor from a fourth Josephson junction. Nodes defined by the Josephson junctions of the first qubit and their neighboring inductors are connected to corresponding nodes defined by the third Josephson junction and the third inductor via a first capacitor, with one pair of connections swapped such that the nodes are not connected to their respective corresponding nodes.