Comparators are implemented in many circuits, including analog-to-digital converters (ADCs). Some ADCs demand high bandwidth, low power consumption, and high speed. To address these requirements, a comparator circuit can be implemented without a separate pre-amplifier, where a sampling network drives a latch directly. Specifically, the comparator circuit integrates a pre-amplifier within the latch in a manner that ensures low power and high speed operation.

Comparators are implemented in many circuits, including analog-to-digital converters (ADCs). Some ADCs demand high bandwidth, low power consumption, and high speed. To address these requirements, a comparator circuit can be implemented without a separate pre-amplifier, where a sampling network drives a latch directly. Specifically, the comparator circuit integrates a pre-amplifier within the latch in a manner that ensures low power and high speed operation.

A latched comparator comprises a pre-amplifier stage with a positive input (V.sub.in,p), a negative input (V.sub.in,n); and a differential output (V.sub.out) comprising a first output (V.sub.out,1) and a second output (V.sub.out,2), the pre-amplifier stage comprising a first cascode pair, comprising a first amplifying transistor (MN2) and a first cascode transistor (MN4) connected at a first cascode node, the first amplifying transistor (MN2) being controlled by the positive input (V.sub.in,p) and the first cascode transistor (MN4) being connected, opposite to the first cascode node, to the first output (V.sub.out,1); a second cascode pair, comprising a second amplifying transistor (MN3) and a second cascode transistor (MN5) connected at a second cascode node, the second amplifying transistor (MN3) being controlled by the negative input (V.sub.in,n) and the second cascode transistor (MN5) being connected, opposite to the second cascode node, to the second output (V.sub.out,2); a first gain-boosting transistor (MN6) connected between the first output (V.sub.out,1) and the first cascode node; and a second gain-boosting transistor (MN7) connected between the second output (V.sub.out,2) and the second cascode node, wherein the first gain-boosting transistor (MN6) and the second gain-boosting transistor (MN7) are cross-coupled, so that the first gain-boosting transistor (MN6) is controlled by the second output (V.sub.out,2) and the second gain-boosting transistor (MN7) is controlled by the first output (V.sub.out,2).

A method of enhancing SAR ADC performance includes employing PVT processor to correct process, voltage and temperature (PVT) variation. The PVT processor senses process, supply voltage and temperature information then maximize the time for SAR binary search process. The PVT processor first applies coarse optimization to correct process and voltage variation then applies fine optimization to correct the temperature variation. The SAR ADC is operated at its optimized PVT condition and its performance is enhanced after PVT optimization.

Analog-to-digital converter (ADC) circuitry to convert an analog signal to a digital signal is disclosed herein. The ADC circuitry can utilize pipelined-interpolation analog-to-digital converters (PIADCs) with adaptation circuitry to correct regenerative amplification cells of the PIADCs. The PIADCs can implement a rotational shuffling scheme for correction of the regenerative amplification cells, where the correction implemented by the regenerative amplification cells allows for offsetting of latches of the regenerative amplification cells.

An apparatus comprises circuitry configured to generate a predicted error signal by applying to a digital signal a distortion model characterized by parameters configured to model circuit component mismatches in a digital-to-analog converter (DAC), circuitry configured to generate a pre-compensated digital signal using the digital signal and the predicted error signal, and circuitry configured to provide the pre-compensated digital signal to the DAC for conversion into an analog signal.

A method of enhancing SAR ADC performance includes employing PVT processor to correct process, voltage and temperature (PVT) variation. The PVT processor senses process, supply voltage and temperature information then maximize the time for SAR binary search process. The PVT processor first applies coarse optimization to correct process and voltage variation then applies fine optimization to correct the temperature variation. The SAR ADC is operated at its optimized PVT condition and its performance is enhanced after PVT optimization.

A sub-ranging analog-to-digital converter (ADC) converts an analog input signal to a digital output signal. The sub-ranging ADC includes a coarse ADC, a fine ADC, and an error correction circuit (ECC). The fine ADC includes at least three digital-to-analog converters (DACs) that are connected in a pipeline architecture. The coarse and fine ADCs receive the analog input signal in a first half cycle of a clock signal. The coarse ADC converts the analog input signal to a first digital signal in a second half cycle of the clock signal. At least one of the first through third DACs converts the analog input signal to a second digital signal in a full cycle of the clock signal. The ECC receives the first and second digital signals and generates the digital output signal.

A latched comparator comprises a pre-amplifier stage with a positive input (V.sub.in,p), a negative input (V.sub.in,n); and a differential output (V.sub.out) comprising a first output (V.sub.out,1) and a second output (V.sub.out,2), the pre-amplifier stage comprising a first cascode pair, comprising a first amplifying transistor (MN2) and a first cascode transistor (MN4) connected at a first cascode node, the first amplifying transistor (MN2) being controlled by the positive input (V.sub.in,p) and the first cascode transistor (MN4) being connected, opposite to the first cascode node, to the first output (V.sub.out,1); a second cascode pair, comprising a second amplifying transistor (MN3) and a second cascode transistor (MN5) connected at a second cascode node, the second amplifying transistor (MN3) being controlled by the negative input (V.sub.in,n) and the second cascode transistor (MN5) being connected, opposite to the second cascode node, to the second output (V.sub.out,2); a first gain-boosting transistor (MN6) connected between the first output (V.sub.out,1) and the first cascode node; and a second gain-boosting transistor (MN7) connected between the second output (V.sub.out,2) and the second cascode node, wherein the first gain-boosting transistor (MN6) and the second gain-boosting transistor (MN7) are cross-coupled, so that the first gain-boosting transistor (MN6) is controlled by the second output (V.sub.out,2) and the second gain-boosting transistor (MN7) is controlled by the first output (V.sub.out,2).

A circuit 100 is described comprising (i) a first digital-to-analog converter 110, (ii) a second digital-to-analog converter 111, (iii) a plurality of unit elements 120, and (iv) switching circuitry 130. The switching circuitry 130 is adapted so that in a first switching state 231, a set of unit elements 221 of the plurality of unit elements 120 forms part of the first digital-to-analog converter 110, and in a second switching state 232, the set of unit elements 221 forms part of the second digital-to-analog converter 111. Furthermore, a corresponding method of operating a circuit 100 is described.