A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: sending a first read command sequence which indicates a reading of a first physical unit by using a first read voltage level to obtain first data; decoding the first data; sending a second read command sequence which indicates a reading of the first physical unit by using a second read voltage level to obtain second data; decoding the second data with assistance information to improve a decoding success rate of the second data if the second read voltage level meets a first condition or the second data meets a second condition; and decoding the second data without the assistance information if the second read voltage level does not meet the first condition and the second data does not meet the second condition.

Method and apparatus for managing data in a non-volatile memory (NVM) of a storage device, such as a solid-state drive (SSD). In some embodiments, flash memory cells are arranged along word lines to which read voltages are applied to sense programmed states of the memory cells, with the flash memory cells along each word line being configured to concurrently store multiple pages of data. An encoder circuit is configured to apply error correction encoding to input data to form code words having user data bits and code bits, where an integral number of the code words are written to each page. A reference voltage calibration circuit is configured to randomly select a single selected code word from each page and to use the code bits from the single selected code word to generate a set of calibrated read voltages for the associated page.

A decoding method, a memory storage device and a memory controlling circuit unit are provided. The method includes: receiving a read command sequence for reading a plurality of bits from the memory cells; calculating a first count value of a first value and a second count value of a second value in the bits; and adjusting a decoding parameter corresponding to the bits to a specific decoding parameter according to the first count value and the second count value, and performing a decoding operation according to the specific decoding parameter, where the adjusted decoding parameter affects a probability that the bits are considered as an error bit in the decoding operation.

A memory storage device including a memory storage array and a memory controller is provided. The memory storage array is configured to store data. The memory controller is coupled to the memory storage array. The memory controller is configured to write to-be-written data to the memory storage array. The to-be-written data includes a plurality of data bits and a flip bit. The memory controller performs a verification operation on the to-be-written data to determine whether the data bits includes error bits and records information of the error bits. The memory controller, determines, according to a quantity of the error bits, whether to invert parities of the data bits and the flip bit, and records the parity of the flip bit. In addition, a data access method is also provided.

A memory system includes a memory device and a controller. The memory device includes a plurality of non-volatile memory groups individually storing a plurality of data segments, each data segment corresponding to a codeword. The controller is configured to perform hard decision decoding to correct an error when the error is included in a first data segment among the plurality of data segments, determine whether other data segments associated with the first data segment, among the plurality of data segments, are readable when the hard decision decoding fails, and perform chipkill decoding based on the first data segment and the other data segments when the other data segments are readable.

A method, system, and non-transitory computer-readable recording medium of decoding a signal are provided. The method includes receiving signal to be decoded, where signal includes at least one symbol; decoding signal in stages, where each at least one symbol of signal is decoded into at least one bit per stage, wherein Log-Likelihood Ratio (LLR) and a path metric are determined for each possible path for each at least one bit at each stage; determining magnitudes of the LLRs; identifying K bits of the signal with smallest corresponding LLR magnitudes; identifying, for each of the K bits, L possible paths with largest path metrics at each decoder stage for a user-definable number of decoder stages; performing forward and backward traces, for each of the L possible paths, to determine candidate codewords; performing a Cyclic Redundancy Check (CRC) on the candidate codewords; and stopping after a first candidate codeword passes the CRC.

Methods and systems for analyzing data are disclosed. An example method can comprise receiving a first data signal, decoding the first data signal, determining a second data signal based on the decoded first data signal, and determining a modulation error ratio based on a difference between the first data signal and the second data signal.

A flash memory controller is configured to decode a codeword. During the decoding process, the flash memory can check the decoding status of each codeword segment in the codeword and skip the decoding of a codeword segment whose decoding status is passed, thereby saving time decoding and also improving decoding efficiency. Even though only a part of the codeword segments in the codeword have been successfully decoded in the decoding process at the previous time, the flash memory controller can replace the part of the codeword segments in the codeword with the correct results obtained previously, and then decoding the re-formed codeword again. Accordingly, the decoding accuracy can be increased and the burden on the subsequent decoding process or data recovery can be reduced.

Methods, systems, and devices for wireless communications are described. In some systems, a first device may transmit a signal to a second device including a number of error detection bits interleaved with a number of information bits. The second device may use the error detection bits to determine if the signal was received correctly, where each error detection bit may be associated with a set of information bits. The second device may progressively decode the signal and continuously perform an error detection calculation based on a first set of information bits associated with a first error detection bit. Based on the error detection calculation, the second device may calculate an expected error detection bit corresponding to the first error detection bit. The second device may compare the first error detection bit to the expected error detection bit. Other aspects and features are also claimed and described.

Various implementations described herein relate to correcting errors in Dynamic Random Access Memory (DRAM). A memory controller uses an Error Correcting Code (ECC) to store an encoded data word within a DRAM die. The DRAM die is communicatively coupled the memory controller by a memory data bus. The DRAM die includes on-die error correction for data bits stored in the DRAM. Upon reading the encoded data word, the memory controller corrects and detects one or more errors. The one or more errors are introduced by at least one of the on-die error correction of the DRAM die or the memory data bus.