A compound having a structure of ##STR00001##
is disclosed. In these formulas, each R.sub.1, R.sub.2, and R.sub.3 is independently selected from hydrogen, alkyl, and aryl; at least one of R.sub.1 and R.sub.2 is a branched alkyl containing at least 4 carbon atoms, where the branching occurs at a position further than the benzylic position; where R.sub.1 and R.sub.3 are mono-, di-, tri-, tetra-, or no substitutions; and R.sub.2 is mono-, di-, or no substitutions. Heteroleptic iridium complexes including such compounds, and devices including such compounds are also disclosed.

A compound having a structure of ##STR00001##
is disclosed. In these formulas, each R.sub.1, R.sub.2, and R.sub.3 is independently selected from hydrogen, alkyl, and aryl; at least one of R.sub.1 and R.sub.2 is a branched alkyl containing at least 4 carbon atoms, where the branching occurs at a position further than the benzylic position; where R.sub.1 and R.sub.3 are mono-, di-, tri-, tetra-, or no substitutions; and R.sub.2 is mono-, di-, or no substitutions. Heteroleptic iridium complexes including such compounds, and devices including such compounds are also disclosed.

The present invention relates to an organic electroluminescent device comprising a light-emitting layer B containing at least one host compound H of Formula (I)

##STR00001##

wherein each of X′.sub.1 and X′.sub.2 is independently from another selected from the group consisting of nitrogen and an optionally substituted carbon atom, and wherein at least one of R′.sub.1-R′.sub.10 is CN and at least one of R.sub.A-R.sub.E is a substituted silane residue.

A luminophore may have the general formula A.sub.zE.sub.eX.sub.6:RE, where A is selected from bivalent elements, E is selected from tetravalent elements, X is selected from monovalent elements, and RE is selected from activator elements. In addition, 0.9≤z≤1.1, and 0.9≤e≤1.1. A method for producing such a luminophore is also disclosed. A radiation-emitting component may further include the luminophore.

A high-resolution display system is provided. A display system with high display quality is provided. The display system includes a processing unit and a display unit. A first image signal is supplied to the processing unit. The processing unit has a function of generating a second image signal by using the first image signal. The processing unit has a function of generating a correction signal. The display unit includes a pixel. The pixel includes a display element and a memory circuit. The second image signal and the correction signal are supplied to the pixel. The memory circuit has a function of retaining the correction signal.

A display device includes a matrix of pixel units each including a light-emitting element and a pixel circuit that causes the light-emitting element to emit light. The pixel circuit includes a first driver that drives the light-emitting element in response to the gradation value of an image in a range of gradation values less than or equal to a first boundary value and does not drive the light-emitting element in response to the image gradation value in a range of gradation values greater than the first boundary value, and a second driver that does not drive the light-emitting element in response to the image gradation value in a range of gradation values less than or equal to a second boundary value and drives the light-emitting element in response to the image gradation value in a range of gradation values greater than the second boundary value..

A display device has a display area in which there is provided a plurality of pixels and a frame area surrounding the display area. The display device includes, in the display area: a substrate; a thin film transistor layer; a light-emitting element layer including a plurality of light-emitting elements configured to emit light of mutually different colors; and a sealing layer in this order. The plurality of light-emitting elements include a cathode, an electron transport layer, a light-emitting layer, a hole transport layer, and an anode in this order from a substrate side. The electron transport layer includes oxide nanoparticles and a binder resin. On an electron transport layer side of the cathode, there is provided an undercoat layer in contact with the electron transport layer.

A curable resin composition containing quantum dots (A), a resin (B), a photopolymerizable compound (C), a photopolymerization initiator (D), an antioxidant (E), and a solvent (F), wherein a water content based on a total mass of the curable resin composition is 50 ppm or more and less than 5000 ppm.

To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.