A method of controlling a semiconductor process includes performing a semiconductor process using plasma in a chamber including an electrostatic chuck (ESC) on which a wafer is seated, obtaining an ESC voltage supplied to the ESC, an ESC current detected from the ESC, and bias power supplied to a bias electrode in the chamber, while the semiconductor process is being performed in the chamber, and determining whether a discharge has occurred between the ESC and the wafer using at least one of the ESC voltage, the ESC current, and the bias power.

A plasma chemical reactor including an anode having a generally cylindrical shape and an axis of rotational symmetry; a cathode inside the anode and co-axial with the anode; a hot plasma channel between the between the anode and the cathode; a gas input module providing gas flow into the anode; a gas output module at a distal end of the anode; and a high voltage power supply providing with a current in a range of 0.1-1.0 A. The high voltage power supply provides a voltage to the cathode in a range of 0-5 kV, a power of at least 1 kW, and a voltage/current ratio of at least 1000 V/A.

Power supplies, waveform function generators and methods for controlling a plasma process are described. The power supplies or waveform function generators include a component for executing the method in which a waveform shape change index is determined during a plasma process and evaluated for compliance with a predetermined tolerance.

A system for determining an operational state of an atmospheric pressure plasma. The system has a transformer for coupling power into the atmospheric pressure plasma, a current sampling circuit configured to sample at least one current pulse flowing through a primary winding of the transformer, and a programmed microprocessor configured to determine, from a waveform of the current pulse, the operational state of the atmospheric pressure plasma. The operational state is one of: a no plasma state, a plasma origination state indicative of an ignited arc expanding into a plasma by gas flow thereinto, and a plasma maintenance state indicative of the plasma being expanded.

Systems, devices, methods, and computer readable media for generating plasma for treating objects may be provided. Embodiments include a housing; a plasma-generation zone within the housing configured to enable accommodation of an object; circuitry for supplying energy to carry out a plasma treatment for increasing hydrophilicity of the object to a desired level; at least one sensor configured to measure at least one plasma-activation parameter during the plasma treatment; and at least one processor configured to: determine, based on the at least one plasma-activation parameter, that the plasma treatment is below a threshold for increasing the hydrophilicity of the object to the desired level; and output a notification indicating plasma treatment failure.

A method for measuring an electron nonextensive parameter of a plasma by using nonextensive statistical mechanics and electric probe is provided. The plasma is described by the nonextensive statistical mechanics and establishes a nonextensive single electric probe theory on the basis of this. The electron nonextensive parameter have been measured which cannot be measured by traditional single probe, and obtained more accurate electron temperature, plasma potential, electron density and floating potential than traditional single probe. The nonextensive electric probe plays a role in plasma diagnosis, which will measure the nonextensivity of plasma and improve the diagnostic accuracy of other plasma parameters.

An apparatus for diagnostics of neutral radicals in plasma, the apparatus comprising: a portable probe configured to be attached to and extend into a plasma chamber to obtain information from plasma contained in the plasma chamber, the probe comprising a metallic rod configured to be biased with an alternating current voltage applied to the probe to obtain current measurements; a transparent dielectric sleeve having a large bandgap configured to allow light transmission to obtain optical emission spectra from the plasma; and an insulated thermocouple junction provided in the metallic rod, the thermocouple junction configured to measure equilibrium temperature of the probe.

A dielectric barrier discharge ionization detector (BID) capable of achieving a high level of signal-to-noise ratio in a stable manner is provided. In a BID having a high-voltage electrode, upstream-side ground electrode and downstream-side ground electrode circumferentially formed on the outer circumferential surface of a cylindrical dielectric tube, a heater for heating the cylindrical dielectric tube or tube-line tip member attached to the upper end of the same tube is provided. Increasing the temperature of the cylindrical dielectric tube by this heater improves the stability of the electric discharge, whereby the amount of noise is reduced and a high level of signal-to-noise is achieved.

The dielectric barrier discharge ionization detector includes: a dielectric tube through which a plasma generation gas is passed; a high-voltage electrode formed on the outer wall of the dielectric tube; two ground electrodes and formed on the outer wall of the dielectric tube, with the high-voltage electrode in between; a voltage supplier for applying AC voltage between the high-voltage electrode and each ground electrode to generate electric discharge within the dielectric tube and thereby generate plasma from the plasma generation gas; and a charge-collecting section for detecting an ion current formed by ionized sample-component gas produced by the plasma. The distance between one ground electrode and the high-voltage electrode is longer than a discharge initiation distance between these two electrodes, while the distance between the other ground electrode and the high-voltage electrode is shorter than the discharge initiation distance between these two electrodes.

In one embodiment, systems and methods include using a Langmuir probe to measure a plasma. The Langmuir probe comprises a housing, wherein the housing comprises an outer diameter and an inner diameter, wherein the inner diameter defines an internal cavity. The Langmuir probe further comprises a plurality of bodies, wherein the plurality of bodies is disposed at least partially within the inner cavity, wherein each of the plurality of bodies comprise a set of internal cavities. The Langmuir probe further comprises a plurality of double Langmuir probes disposed each set of the internal cavities.