H05H1/46

High temperature heated support pedestal in a dual load lock configuration
11557500 · 2023-01-17 · ·

Embodiments of the present disclosure provide a heated support pedestal including a body comprising a ceramic material, a support arm extending radially outward from a periphery of the body that is coupled to a shaft, and a vacuum conduit disposed within the shaft and through the body to connect with a surface of the body.

PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING METHOD
20230223239 · 2023-07-13 ·

A plasma processing apparatus for cleaning a peripheral portion of a substrate by plasma and comprising a depressurizable processing container accommodating a substrate is disclosed. The processing container includes a substrate support for supporting a substrate and including a central electrode facing a central portion of the supported substrate supported by the substrate support; a lower ring electrode formed in a ring shape to face a lower surface of a peripheral portion of the substrate supported by the substrate support; and an upper ring electrode disposed to face an upper surface of the peripheral portion of the substrate supported by the substrate support. The central electrode is grounded, a radio frequency (RF) power is supplied to each of the upper and lower ring electrodes, and the RF power is supplied to at least one of the upper and lower ring electrodes via a phase adjuster configured to adjust the phase of the RF power.

SYSTEMS AND METHODS OF PLASMA GENERATION WITH MICROWAVES
20230225042 · 2023-07-13 ·

Plasma generators and methods of generating plasma are disclosed. Electrodes in a reaction zone are energized by a high voltage power source that is electrically insulated from the electrodes. A first conductor array, preferably a coil, is electrically coupled to the power source and electrically insulated from the electrodes. A second conductor array, preferably a coaxial coil nested within the first conductor array, is electrically coupled to the electrodes. Electromagnetic induction between the first conductor array and the second conductor array is used to energize the electrodes and generate a plasma in the reaction zone. One or more microwaves are further directed at the plasma to form microwave plasma, either in parallel or in series. Such plasmas are used to reform a hydrocarbon feedstock into low C hydrocarbons, carbon, or hydrogen. Plasma generators combining induction plasma with serial microwave plasmas are further contemplated.

FREQUENCY CHIRP RESONANT OPTIMAL PLASMA IGNITION METHOD
20230009209 · 2023-01-12 ·

A system for plasma ignition and maintenance of an atmospheric pressure plasma. The system has a variable frequency alternating current (AC) power source, a transformer, a cable connected to a secondary winding of the transformer, a programmed microprocessor for control of power to the atmospheric pressure plasma. The microprocessor is configured to a) at pre-ignition, power the AC power source at an operational frequency f.sub.op higher than the resonant frequency f.sub.r, b) decrease the operational frequency f.sub.op of the AC power source until there is plasma ignition, and c) after the plasma ignition, further decrease the operational frequency f.sub.op of the AC power source to a frequency lower than the resonant frequency f.sub.r.

FREQUENCY CHIRP RESONANT OPTIMAL PLASMA IGNITION METHOD
20230009209 · 2023-01-12 ·

A system for plasma ignition and maintenance of an atmospheric pressure plasma. The system has a variable frequency alternating current (AC) power source, a transformer, a cable connected to a secondary winding of the transformer, a programmed microprocessor for control of power to the atmospheric pressure plasma. The microprocessor is configured to a) at pre-ignition, power the AC power source at an operational frequency f.sub.op higher than the resonant frequency f.sub.r, b) decrease the operational frequency f.sub.op of the AC power source until there is plasma ignition, and c) after the plasma ignition, further decrease the operational frequency f.sub.op of the AC power source to a frequency lower than the resonant frequency f.sub.r.

Ignition method of plasma chamber

An ignition method of a plasma chamber includes steps of: (a) starting softly an ignition voltage to a first voltage, (b) decreasing the magnitude of the ignition voltage to a second voltage after a first ignition time, (c) increasing the magnitude of the ignition voltage to the first voltage after a second ignition time, and (d) repeating the step (b) and the step (c) until the ignition is successful.

Ignition method of plasma chamber

An ignition method of a plasma chamber includes steps of: (a) starting softly an ignition voltage to a first voltage, (b) decreasing the magnitude of the ignition voltage to a second voltage after a first ignition time, (c) increasing the magnitude of the ignition voltage to the first voltage after a second ignition time, and (d) repeating the step (b) and the step (c) until the ignition is successful.

TOOL HEALTH MONITORING AND CLASSIFICATIONS WITH VIRTUAL METROLOGY AND INCOMING WAFER MONITORING ENHANCEMENTS

A method of evaluating tool health of a plasma tool is provided. The method includes providing a virtual metrology (VM) model that predicts a wafer characteristic based on parameters measured by module sensors and in-situ sensors of the plasma tool. A classification model is provided that identifies a plurality of failure modes of the plasma tool. An initial test is performed on an incoming wafer to determine whether the incoming wafer meets a preset requirement. The wafer characteristic is predicted using the VM model when the incoming wafer meets the preset requirement. A current failure mode is identified using the classification model when the wafer characteristic predicted by using the VM model is outside a pre-determined range.

TOOL HEALTH MONITORING AND CLASSIFICATIONS WITH VIRTUAL METROLOGY AND INCOMING WAFER MONITORING ENHANCEMENTS

A method of evaluating tool health of a plasma tool is provided. The method includes providing a virtual metrology (VM) model that predicts a wafer characteristic based on parameters measured by module sensors and in-situ sensors of the plasma tool. A classification model is provided that identifies a plurality of failure modes of the plasma tool. An initial test is performed on an incoming wafer to determine whether the incoming wafer meets a preset requirement. The wafer characteristic is predicted using the VM model when the incoming wafer meets the preset requirement. A current failure mode is identified using the classification model when the wafer characteristic predicted by using the VM model is outside a pre-determined range.

SYSTEMS AND METHODS FOR PROCESSING GASES

The invention includes a gas processing system for transforming a hydrocarbon-containing inflow gas into outflow gas products, where the system includes a gas delivery subsystem, a plasma reaction chamber, and a microwave subsystem, with the gas delivery subsystem in fluid communication with the plasma reaction chamber, so that the gas delivery subsystem directs the hydrocarbon-containing inflow gas into the plasma reaction chamber, and the microwave subsystem directs microwave energy into the plasma reaction chamber to energize the hydrocarbon-containing inflow gas, thereby forming a plasma in the plasma reaction chamber, which plasma effects the transformation of a hydrocarbon in the hydrocarbon-containing inflow gas into the outflow gas products, which comprise acetylene and hydrogen. The invention also includes methods for the use of this gas processing system.