According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel in which a substrate is processed; an outer vessel configured to cover an outer circumference of the process vessel; a gas flow path provided between the outer vessel and the outer circumference of the process vessel; an exhaust path in communication with the gas flow path; an adjusting valve configured to be capable of adjusting a conductance of the exhaust path; a first exhaust apparatus provided on the exhaust path downstream of the adjusting valve; a pressure sensor configured to measure an inner pressure of the outer vessel; and a controller configured to be capable of adjusting an exhaust volume flow rate of the first exhaust apparatus by controlling the first exhaust apparatus based on a pressure measured by the pressure sensor.

Plasma processor including: reaction chamber having a base for placing a wafer; a source radio-frequency power supply outputting high frequency radio-frequency power into the reaction chamber to ignite and maintain plasma; a first bias radio-frequency power supply and a second bias radio-frequency power supply, the first bias radio-frequency power supply outputting a first radio-frequency signal with first frequency, the second bias radio-frequency power supply outputting a second radio-frequency signal with second frequency higher than the first frequency, the first radio-frequency signal and the second radio-frequency signal being superimposed to form a periodical first compound signal that is applied to the base; and a controller configured for tuning at least one of amplitude, frequency, average voltage or phase of the first radio-frequency signal and of the second radio-frequency signal, such that the first compound signal experiences three consecutive stages in each cycle: falling stage, flat stage, and rising stage.

Plasma processor including: reaction chamber having a base for placing a wafer; a source radio-frequency power supply outputting high frequency radio-frequency power into the reaction chamber to ignite and maintain plasma; a first bias radio-frequency power supply and a second bias radio-frequency power supply, the first bias radio-frequency power supply outputting a first radio-frequency signal with first frequency, the second bias radio-frequency power supply outputting a second radio-frequency signal with second frequency higher than the first frequency, the first radio-frequency signal and the second radio-frequency signal being superimposed to form a periodical first compound signal that is applied to the base; and a controller configured for tuning at least one of amplitude, frequency, average voltage or phase of the first radio-frequency signal and of the second radio-frequency signal, such that the first compound signal experiences three consecutive stages in each cycle: falling stage, flat stage, and rising stage.

A rotary plasma reactor system is provided. In another aspect, a plasma reactor is rotatable about a generally horizontal axis within a vacuum chamber. A further aspect employs a plasma reactor, a vacuum chamber, and an elongated electrode internally extending within a central area of the reactor. Yet another aspect employs a plasma reactor for use in activating, etching and/or coating tumbling workpiece material.

An induction feed through system for treating a flow of material is disclosed, including a high voltage energy source energizing a low-turn coil wrapped about an outer wall of a reaction chamber. The flow of electricity through the low-turn coil in turn energizes a high-turn coil wrapped about an inner wall disposed within the outer wall of the reaction chamber. An electrode assembly disposed within the reaction chamber is electrically coupled to and energized by the high-turn coil, in turn generating plasma in the reaction chamber. The plasma is used to excite a flow of material through the induction feed through system. The electromagnetic properties of the plasma further provide direct feedback to the low-turn and high-turn coils.

Provided is a mounting stage on which a substrate to be subjected to a plasma process is mounted. The mounting stage includes: an electrostatic chuck configured to attract the substrate and an edge ring disposed around the substrate; and supply holes through which a heat medium is supplied to a space between the electrostatic chuck and the edge ring. A groove is provided in at least one of the edge ring and the mounting stage, and the groove is not in communication with the supply holes.

The present invention provides a stage which comprises: a plate-shaped member having a mounting surface on which a workpiece to be processed is mounted and a rear surface facing the mounting surface, said plate-shaped member being provided with a through hole that penetrates through the mounting surface and the rear surface; and an embedded member disposed inside the through hole. This stage is configured such that the surface of the embedded member is provided with at least one of a concave portion and a convex portion.

A parallelepipedal low-pressure plasma chamber body of glass is disclosed. The low-pressure plasma chamber may have electrodes at opposing sides of the low-pressure plasma chamber body. Furthermore, the low-pressure plasma chamber may have at opposing sides a door and a rear wall closure. The door and rear wall closure may in each case have at least one media connection in order to achieve a uniform gas flow in the low-pressure plasma chamber. The door may be assembled on the collar of the low-pressure plasma chamber body which extends radially away from the longitudinal axis of the low-pressure plasma chamber body. The low-pressure plasma chamber body is preferably produced using the pressing method or blow-and-blow method, in an analogous manner to industrial glass bottle production.

An atmospheric pressure linear RF plasma source having an enclosure enclosing a chamber in the form of an extended slot having a width W, a length L, and a thickness T, with W≥20T, the enclosure having a top opening for receiving a flow of a working gas in the direction of the length L and a bottom opening for delivering a flow of plasma, with the bottom opening being open to atmospheric pressure. Then walls of the enclosure comprise a dielectric material. Two mutually opposing pancake coils are positioned on opposite sides of the enclosure and are capable of being driven by an RF power source in an opposing phase relationship. Alternatively, an elongated solenoid coil may surround the enclosure.

An atmospheric pressure linear RF plasma source having an enclosure enclosing a chamber in the form of an extended slot having a width W, a length L, and a thickness T, with W≥20T, the enclosure having a top opening for receiving a flow of a working gas in the direction of the length L and a bottom opening for delivering a flow of plasma, with the bottom opening being open to atmospheric pressure. Then walls of the enclosure comprise a dielectric material. Two mutually opposing pancake coils are positioned on opposite sides of the enclosure and are capable of being driven by an RF power source in an opposing phase relationship. Alternatively, an elongated solenoid coil may surround the enclosure.