An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

A capacitively coupled plasma substrate processing apparatus includes: a process chamber which is exhausted to vacuum and provides a sealed internal space; a gas inflow pipe which is connected to the process chamber to provide a process gas into the process chamber; a gas distribution unit which is connected to the gas inflow pipe to inject the process gas flowing into the gas inflow pipe in the internal space; an impedance matching network which is disposed outside the process chamber and transfers an RF power of an RF power supply to the gas distribution unit; an RF connection line which connects an output of the impedance matching network to the gas inflow pipe or the gas distribution unit; and a shielding plate which is configured such that at least one of the RF connection line and the gas inflow pipe penetrates the shielding plate and includes a ferromagnetic material.

Disclosed is a method and apparatus for utilizing a variable gain algorithm for adjusting a capacitor in an automatic radio frequency (RF) impedance matching network. The apparatus may operate in a closed-loop feedback control system, with one or more error signals driving the capacitors within the system. To achieve a critically damped control system response, multiple operating regions for the matching network and its constituent elements may be identified and a set of gains (e.g., different per region) may be applied to the error signals in the control system when operating in those regions. An operating region may be defined by characteristics of the input signals measured by the apparatus, calculated by the apparatus, or the state of the apparatus itself. These features may be arranged in a look up table (or determined by calculation) for the apparatus to use to determine the variable gains in the system.

A method for cleaning a microwave plasma processing apparatus which has a processing container and a microwave radiation part, and which has a window part provided at a position where the microwave radiation part is disposed in the processing container, includes a cleaning step of adjusting a pressure to a pressure corresponding to a size of a cleaning target part, among parts within the processing container including a wall surface of the processing container, the microwave radiation part, and the window part, while supplying a cleaning gas, and performing a cleaning process using plasma of the cleaning gas.

Embodiments disclosed herein include a high-frequency emission module. In an embodiment, the high-frequency emission module comprises a solid state high-frequency power source, an applicator for propagating high-frequency electromagnetic radiation from the power source, and a thermal break coupled between the power source and the applicator. In an embodiment, the thermal break comprises a substrate, a trace on the substrate, and a ground plane.

Embodiments disclosed herein include a high-frequency emission module. In an embodiment, the high-frequency emission module comprises a solid state high-frequency power source, an applicator for propagating high-frequency electromagnetic radiation from the power source, and a thermal break coupled between the power source and the applicator. In an embodiment, the thermal break comprises a substrate, a trace on the substrate, and a ground plane.

Plasma processing systems and methods are disclosed. The plasma processing system includes a high-frequency generator configured to deliver power to a plasma chamber and a low-frequency generator configured to deliver power to the plasma chamber. A filter is coupled between the plasma chamber and the high-frequency generator, and the filter suppresses mixing products of high frequencies produced by the high-frequency generator and low frequencies produced by the low-frequency generator.

Plasma processing systems and methods are disclosed. The plasma processing system includes a high-frequency generator configured to deliver power to a plasma chamber and a low-frequency generator configured to deliver power to the plasma chamber. A filter is coupled between the plasma chamber and the high-frequency generator, and the filter suppresses mixing products of high frequencies produced by the high-frequency generator and low frequencies produced by the low-frequency generator.

An etching method includes (a) providing a substrate. The substrate includes a first region and a second region. The second region contains silicon oxide, and the first region contains a material different from a material for the second region. The etching method further includes (b) forming a deposit preferentially on the first region with first plasma generated from a first process gas containing a carbon monoxide gas. The etching method further includes (c) etching the second region.

Disclosed is a radio-frequency plasma generating system including a radio-frequency generator and a plasma source, the radio-frequency generator being inductively or capacitively coupled to the plasma source through a resonant electric circuit, the radio-frequency generator being adapted to receive direct current power from a direct current power supply and for generating radio-frequency power at a frequency f, the radio-frequency power including a reactive radio-frequency power oscillating in the resonant electric circuit and an active radio-frequency power absorbed by the plasma. The radio-frequency plasma generating system includes a unit for measuring an efficiency of conversion E of direct-current power to active radio-frequency power absorbed by the plasma and a unit for adjusting the frequency f as a function of the measured efficiency of conversion E to maintain the efficiency of conversion E in a predetermined range within a RF plasma operational range.