Provided is a wiring circuit board that includes a first insulating layer, a conductive pattern disposed on the first insulating layer, and a second protective layer disposed between the first insulating layer and protecting the conductive pattern. The second protective layer consists of a metal oxide.

Disclosed is a method for manufacturing a wiring structure including a step of forming a wiring on an insulating resin layer. The step of forming the wiring includes: forming a modified region including pores in a surface layer of the insulating resin layer by treating a surface of the insulating resin layer with a treatment method including surface modification; forming a seed layer on the surface of the insulating resin layer by sputtering; and forming the wiring on the seed layer by electrolytic copper plating. The disclosed method may include, in this order: a step of forming a surface treatment agent layer that covers a surface of the wiring by treating the surface of the wiring with a surface treatment agent for improving adhesion; and a step of forming a modified region including pores in a surface layer of a first layer of the insulating resin layer by treating the surface of the first layer of the insulating resin layer with a treatment method including surface modification.

A copper/ceramic bonded body of the present invention is formed by bonding a copper member, which is formed of copper or a copper alloy, and a ceramic member, in which a ratio D1/D0 is 0.60 or less, D0 being an average crystal grain size of the entire copper member, D1 being an average crystal grain size of the copper member at a position 50 μm from a bonding surface with the ceramic member, D0 and D1 being obtained by observing a cross-section of the copper member along a laminating direction.

Disclosed are a copper-clad laminate film and an electronic device including the same. The copper-clad laminate film includes a fluorine-containing substrate, a tie layer disposed on the fluorine-containing substrate, and a copper layer disposed on the tie layer, wherein the tie layer may be a metal layer or metal alloy layer including a metal of a metal-oxygen (M-O) bond dissociation energy of 400 kJ/mol or more, and the tie layer may have a thickness of about 10 nm to about 100 nm.

A substrate for a printed circuit board according to an embodiment of the present invention includes a base film having an insulating property, and a metal layer formed on at least one surface side of the base film. In the substrate for a printed circuit board, a plurality of fine particles are disposed between the base film and the metal layer, and the fine particles are formed of a metal the same as a main metal of the metal layer or formed of a metal compound of the main metal. The fine particles preferably have an average particle size of 0.1 nm or more and 20 nm or less. The fine particles are preferably formed of a metal oxide or a metal hydroxide. The fine particles are preferably present between the base film and the metal layer so as to form a layer. The metal layer preferably includes a metal grain layer formed by firing metal nanoparticles.

A printed circuit board (PCB) includes: a substrate; and a circuit pattern disposed on the substrate, wherein the circuit pattern includes a first seed layer disposed on the substrate and including a nitride, and a metal layer disposed on the first seed layer.

A support substrate (1), in particular a metal-ceramic substrate, as a support for electric components, comprising: —at least one metal layer (10) and—an insulating element (30), in particular a ceramic element, a glass element, a glass ceramic element, and/or a high temperature-resistant plastic element. The at least one metal layer (10) and the insulating element (30) extend along a main extension plane (HSE) and are arranged one over the other in a stacking direction (S) running perpendicularly to the main extension plane (HSE), wherein in a completed support substrate (1), a binding layer (12) is formed between the at least one metal layer (10) and the insulating element (30), and an adhesive layer (13) of the binding layer (12) has a surface resistance which is greater than 5 Ohm/sq.

Provided is a method for manufacturing a wiring board that forms a wiring layer having favorable adhesion without a resin resist pattern. A method prepares a substrate with seed-layer including: a underlayer on the surface of an insulating substrate; and a seed layer on the surface of the underlayer, the seed layer having a predetermined pattern and containing metal; presses a solid electrolyte membrane against the seed layer and the underlayer, and applies voltage between an anode and the underlayer to reduce metal ions in the membrane and form a metal layer on the surface of the seed layer; and removes an exposed region without the seed layer and the metal layer of the underlayer to form a wiring layer including the underlayer, the seed layer and the metal layer on the surface of the substrate.

Printed wiring boards with reduced curing unevenness and the like may be produced by (A) preparing an adhesive sheet having a support and a resin composition layer provided on the support, (B) laminating the adhesive sheet on an internal layer substrate so that the resin composition layer is in contact with the internal layer substrate, and (C) thermally curing the adhesive sheet by heating from T1 (° C.) to T2 (° C.), to form an insulating layer, wherein the adhesive sheet is thermally cured so that a relation of Y>2700X is satisfied in which X is the sum of a difference between a maximum expansion rate of the support in the MD direction during heating from T1 (° C.) to T2 (° C.) and an expansion rate of the support at the end of heating and a difference between a maximum expansion rate of the support in the TD direction during heating from T1 (° C.) to T2 (° C.) and an expansion rate of the support at the end of heating and Y is the lowest melt viscosity of the resin composition layer at 120° C. or higher.

A wiring board includes an insulating layer; an insulating oxide film that is formed by forming a film of metal oxide or semimetal oxide on a surface of the insulating layer; a seed layer that is made of metal and that is stacked on the insulating oxide film; and an electrode that is made of metal and that is formed on the seed layer, wherein the insulating oxide film and the seed layer are removed from an area not overlapping the electrode to expose the insulating layer.