The present disclosure provides a transistor acoustic sensor element and a method for manufacturing the same, an acoustic sensor and a portable device. The transistor acoustic sensor element comprises a gate, a gate insulating layer, a first electrode, an active layer and a second electrode arranged on a base substrate, wherein the active layer has a nanowire three-dimensional mesh structure and thus can vibrate under the action of sound signals, so that the output current of the transistor acoustic sensor element changes correspondingly. Since the active layer having the nanowire three-dimensional mesh structure can sensitively sense weak vibration of acoustic waves, the sensitivity to sound signals of the transistor acoustic sensor element is improved.

The present invention relates to a phosphor monomolecular compound, an organic transistor using same, and a water splitting and hydrogen production photocatalytic system using same. More specifically, the present invention comprises a water-soluble monomolecular compound including 1,5-naphtyridine-2,6-dione structure as a phosphor monomolecular compound.

A device comprising a stack of layers defining one or more electronic elements, wherein the stack comprises at least: one or more semiconductor channels; a dielectric; a first conductor pattern defining one or more coupling conductors, wherein the one or more coupling conductors are capacitively coupled to the one or one or more semiconductor channels via the dielectric; a planarisation layer; a second conductor pattern defining one or more routing conductors, wherein the second conductor pattern is in contact with the first conductor pattern via through holes in at least the planarisation layer, and wherein the semiconductor channel regions are at least partly outside the through hole regions.

In some examples, an organic light emitting transistor (OLET) comprises a substrate layer; a gate electrode disposed on the substrate layer; and a dielectric layer disposed on the gate electrode. The OLET further comprises a first organic semiconductor layer (OSL) disposed on the dielectric layer; a second OSL disposed on the first OSL; a third OSL disposed on the second OSL; a drain electrode disposed on the third OSL; a first source electrode partially disposed on both the first OSL and the third OSL; and a second source electrode partially disposed on both the first OSL and the third OSL, wherein a length of the first OSL is larger than lengths of both the second and third OSLs, and wherein a width of the first OSL is smaller than widths of both the second and third OSLs.

The present invention relates to the production of a layer structure, comprising the following process steps: i) coating a substrate with a composition at least comprising silver nanowires and a solvent; ii) at least partial removal of the solvent, thereby obtaining a substrate that is coated with an electrically conductive layer, the electrically conductive layer at least comprising the silver nanowires; iii) bringing into contact selected areas of the electrically conductive layer with an etching composition, thereby reducing the conductivity of the electrically conductive layer in these selected areas, wherein the etching composition comprises an organic compound capable of releasing chlorine, bromine or iodine, a compound containing hypochloride, a compound containing hypo-bromide or a mixture of at least two of these compounds. The invention also relates to a layer structure obtainable by this method, a layer structure, the use of a layer structure, an electronic component and the use of an organic compound.

There is provided a planar structural body 1 comprising a fibrous carbon nanohorn aggregate 2 in which a plurality of single-walled carbon nanohorns are aggregated in a fibrous state, and particularly the planar structural body in which a globular carbon nanohorn aggregate 3 is mixed is used. The planar structural body comprising such a fibrous carbon nanohorn aggregate can be used for electrode materials for lithium ion batteries, fuel cells, capacitors, electrochemical actuators, air cells, solar cells, and the like, and can be used also for electromagnetic shields, thermoconductive sheets, heat-dissipating sheets, protecting sheets, filters and absorbing materials.

A system that includes an energy device having an active region configured to generate or consume electrical energy provided by an electrical current is discussed. A current limiter is disposed between the energy device and a current collector layer. The current limiter controls the current flow between the energy device and the current collector layer. A plurality of electrochemical transistors (ECTs) are arranged in an array such that each ECT in the array provides localized current control for the energy device. Each ECT includes a gate electrode, a drain electrode, a source electrode, and a channel disposed between the drain and the source electrodes. An electrolyte electrically couples the gate electrode to the channel such that an electrical signal at the gate electrode controls electrical conductivity of the channel. The current collector layer is a shared drain or source electrode for the ECTs.

The present disclosure relates to a neuron behavior-imitating electronic synapse device and a method of fabricating the same. According to one embodiment, the neuron behavior-imitating synapse device includes a first electrode having a lithium-doped surface, an active layer formed on the first electrode and including a polyelectrolyte and one or more metal nanoparticles, and a second electrode formed on the active layer.

Gated organic light-emitting diodes or vertical light emitting transistors are disclosed based on the modulation of charge carrier injection from electrodes into light-emitting materials by applying external gate potential. This gate modulation were achieved in two disclosed methods: 1) a porous electrode allowing mobile ions to stabilize electrochemically doped semiconducting materials that can form ohmic contact with electrodes: 2) an electrode with gate-tunable work function such as Al:LiF composite electrodes.

A display device includes: a thin-film transistor on a substrate, the thin-film transistor including on the substrate: an active layer; a gate electrode overlapping the active layer; a source electrode and a drain electrode electrically connected to the active layer and including a first metal material; and a first capping layer which covers each of the source electrode and the drain electrode, the first capping layer having a Young's modulus greater than that of the first metal material.