A photo-sensitive device comprises: an active layer configured to generate charges in response to incident light; a charge transport layer arranged below the active layer, wherein the charge transport layer comprises a first portion and a second portion being laterally displaced in relation to the first portion; a gate separated by a dielectric material from the charge transport layer, wherein said gate is arranged below the first portion and configured to control a potential thereof; and a transfer gate, which is separated by a dielectric material from a transfer portion of the charge transport layer between the first portion and the second portion, wherein the transfer gate is configured to control transfer of accumulated charges in the first portion to the second portion for read-out of detected light.

Methods' and compositions for making coated substrates using a co-solvent method are disclosed. Embodiments of the present disclosure relate in general to methods and compositions for making thin films of organometallic halides. According to one aspect, organometallic halides are deposited from solution on the surface of a substrate at temperatures between about 10 C and 50 C. According to one aspect, organometallic halides are deposited from solution on the surface of a substrate at room temperature.

The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p- type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer dis -posed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.

The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p- type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer dis -posed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.

There is provided a photovoltaic device that comprises a front electrode, a back electrode, and disposed between the front electrode and the back electrode, an electron transporter region comprising an electron transporter layer; a hole transporter region comprising a hole transporter layer, and a layer of perovskite semiconductor disposed between and in contact with the electron transporter layer and the hole transporter layer. The electron transporter region is nearest to the front electrode and the hole transporter region is nearest to the back electrode, and the electron transporter layer comprises any of a chalcogenide material and an organic material and has a thickness of at least 2 nm.

Provided are an organic-inorganic hybrid perovskite nanocrystal particle light emitting body having a gradient structure, a method of producing the same, and a light emitting element using the same. The organic-inorganic hybrid perovskite nanocrystal particle light emitting body having a gradient structure includes an organic-inorganic hybrid perovskite nanocrystal which is dispersible in an organic solvent, wherein the nanocrystal has a gradient composition in which a composition is changed from the center thereof to the outside. Therefore, the gradual change in the content in the nanocrystal may be used to uniformly adjust a fraction in the nanocrystal, to reduce surface oxidation, and to improve exciton confinement in the perovskite present in large quantities inside the nanocrystal, and thus light emission efficiency may be improved and durability and stability may be increased.

Provided is a perovskite-based photovoltaic device including a layered scaffold material and at least one perovskite material interpenetrating the layered scaffold, wherein the at least one perovskite layer is removable and regenerable.

Provided are a photoelectric conversion element including a first electrode having a photosensitive layer including a light absorber on a conductive support and a second electrode facing the first electrode, in which the light absorber includes a compound having a perovskite-type crystal structure including organic cations, cations of a metallic atom other than elements belonging to Group I of the periodic table, and anions, and at least some of the organic cations constituting the compound are organic cations having a silyl group and a solar cell using the photoelectric conversion element.

Also provided is a composition containing a compound represented by Formula (1a) and a halogenated metal.

R.sup.1.sub.3Si-L-NR.sup.2.sub.3Hal  Formula (1a)

In the formula, R.sup.1, R.sup.2, and L are specific groups. Hal represents a halogen atom.

A photoelectric conversion element includes: a first substrate; a first electrode; a photoelectric conversion layer; a second electrode; a sealing part; and a second substrate. The photoelectric conversion element is translucent. The second electrode includes a conductive nanowire and a conductive polymer. The sealing part includes a drying agent.

The present invention relates to a semiconductor composition comprising an inorganic semiconducting material and an organic binder. The present invention further relates to an electronic device comprising a semiconducting layer consisting of such semiconductor composition.