A solid-state imaging element including: a photoelectric conversion layer, a first electrode and a second electrode opposed to each other with the photoelectric conversion layer interposed therebetween, a semiconductor layer provided between the first electrode and the photoelectric conversion layer, an accumulation electrode opposed to the photoelectric conversion layer with the semiconductor layer interposed therebetween, an insulating film provided between the accumulation electrode and the semiconductor layer, and a barrier layer provided between the semiconductor layer and the photoelectric conversion layer.

An image sensor includes a function layer including a photoelectric conversion region containing a plurality of semiconductor-type carbon nanotubes; a transparent electrode that collects first electric charges that are positive electric charges or negative electric charges, the positive electric charges or the negative electric charges being generated in the photoelectric conversion region upon entry of light; a first collection electrode that collects second electric charges having a polarity opposite to the first electric charges among the positive electric charges and the negative electric charges; a second collection electrode that collects the second electric charges; a first control electrode that controls movement of the second electric charges toward the first collection electrode; a second control electrode that controls movement of the second electric charges toward the second collection electrode; and an electric charge accumulator in which the second electric charges collected by the first collection electrode are accumulated.

An organic photodetector includes: an anode; a cathode facing the anode; and an active layer disposed between the anode and the cathode and including a first layer and a second layer. The first layer is disposed between the anode and the second layer, the first layer includes a p-type organic semiconductor and an n-type organic semiconductor, and the second layer includes the p-type organic semiconductor.

A photo detecting device, includes a plurality of photodiodes arranged above a substrate, a lower electrode and a first inorganic insulating film that are provided between the substrate and the photodiodes in a direction orthogonal to a surface of the substrate, and an upper electrode provided above the photodiodes. Each of the photodiodes comprises an active layer, a first carrier transport layer provided between the active layer and the lower electrode, and a second carrier transport layer provided between the active layer and the upper electrode, the first inorganic insulating film is provided between the lower electrode and the first carrier transport layer, and the first inorganic insulating film covers at least an end on an outer edge side of the lower electrode.

Photovoltaic devices, and methods of fabricating photovoltaic devices. The photovoltaic devices may include a first electrode, at least one quantum dot layer, at least one semiconductor layer, and a second electrode. The first electrode may include a layer including Cr and one or more silver contacts.

A perovskite-silicon tandem cell capable of absorbing solar radiation with energy lower than that of 1.12 eV, i.e., the bandgap of crystalline silicon—corresponding to the wavelength of 1100 nm. Ho.sup.3+ can absorb photons of wavelength range 1120 to 1190 nm, Tm.sup.3+, 1190 to 1260 nm, and Er.sup.3+, 1145 to 1580 nm, but up-conversion can be achieved using Ho.sup.3+, Tm.sup.3+, and Er.sup.3+-doped metal oxide, such as ZrO.sub.2, in perovskite-silicon tandem solar cells. Doped metal oxides, such as ZrO.sub.2 can also work as selective contacts. Such perovskite-silicon tandem structures can achieve over 30% solar energy conversion efficiency.

An object of the present invention is to provide a photoelectric conversion element excellent in suppression of a change in an external quantum efficiency during a continuous drive. In addition, an imaging element and an optical sensor related to the photoelectric conversion element are provided. The photoelectric conversion element of the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film in this order, contains a first compound that has a maximum absorption wavelength at a wavelength of 500 to 620 nm, and that is a compound represented by Formula (1), and contains a second compound that is different from the first compound and that has a maximum absorption wavelength at a wavelength of 450 to 550 nm.

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A transparent photovoltaic cell and method of making are disclosed. The photovoltaic cell may include a transparent substrate and a first active material overlying the substrate. The first active material may have a first absorption peak at a wavelength greater than about 650 nanometers. A second active material is disposed overlying the substrate, the second active material having a second absorption peak at a wavelength outside of the visible light spectrum. The photovoltaic cell may also include a transparent cathode and a transparent anode.

There is provided a multi junction photovoltaic device comprising a first sub-cell comprising a photoactive region comprising a layer of perovskite material, a second sub-cell comprising a photoactive silicon absorber. and an intermediate region disposed between and connecting the first sub-cell and the second sub-cell. The intermediate region comprises an interconnect layer, the interconnect layer comprising a two-phase material comprising elongate (i.e. filament like) silicon nanocrystals embedded in a silicon oxide matrix.

An electronic device includes a support, a charge-transporting layer, a silicone-containing layer, and a metal oxide film. The charge-transporting layer includes a charge-transporting material or a dye-sensitizing electrode layer including a sensitizing dye. The charge-transporting layer or the sensitizing-dye electrode layer is disposed on or above the support. The silicone-containing layer is disposed on or above the charge-transporting layer or the sensitizing-dye electrode layer. The metal oxide film is disposed on or above the silicone-containing layer. A ratio [Q(ACL)/Q(CTL)] is 10% or greater, where Q(ACL) is a time integral of a transient photocurrent waveform of an electronic device (ACL) measured by a time-of-flight method, and Q(CTL) is a time integral of a transient photocurrent waveform of an electronic device (CTL) measured by a time-of-flight method.