Embodiments include radiative heat-blocking materials comprising one or more non-fullerene components and optionally one or more hole-scavenging components. Embodiments further include windows comprising a transparent photovoltaic device configured to transmit visible light and absorb infrared radiation, wherein an active layer of the photovoltaic device comprises the radiative heat-blocking material. Embodiments further include other devices based on the radiative heat-blocking materials.

The present disclosure provides a photovoltaic device and a method for forming the photovoltaic device. The photovoltaic device comprises a first solar cell structure having a photon absorbing layer comprising an organic material having a first bandgap; and a second solar cell structure having a photon absorbing layer comprising a material that has a Perovskite structure and having a second bandgap. The first and second solar cell structures are positioned at least partially onto each other.

Provided is a power generation battery capable of improving power generation efficiency. The power generation battery includes a first layer, a second layer, and a filter layer. The first layer includes a semiconductor element that has a main absorption region in a visible light region and absorbs a light to generate electric power. The second layer, disposed on a side opposite to an incident direction side of the first layer, includes a semiconductor element that has a main absorption region in an infrared light region and absorbs light to generate electric power. The filter layer is disposed between the first layer and the second layer and blocks or absorbs a light in the visible light region.

A transparent photovoltaic cell and method of making are disclosed. The photovoltaic cell may include a transparent substrate and a first active material overlying the substrate. The first active material may have a first absorption peak at a wavelength greater than about 650 nanometers. A second active material is disposed overlying the substrate, the second active material having a second absorption peak at a wavelength outside of the visible light spectrum. The photovoltaic cell may also include a transparent cathode and a transparent anode.

Disclosed is a method for manufacturing an inverted organic electronic device. The method includes preparing a substrate having a first electrode; depositing a mixture of a cathode interface material and a photo active material onto the first electrode to form a bilayer or composite layer of a cathode interface layer and a photo active layer, followed by forming an anode interface layer on the bilayer or composite layer; and forming a second electrode on the anode interface layer. According to the present invention, it is possible to achieve simplification of a manufacturing process of an inverted organic electronic device and to provide an inverted organic electronic device having excellent performance by forming a cathode interface layer in the form of a uniform and pinhole-free thin film.

A method of growing a III-V semiconductor compound film for a semiconductor device including the steps of depositing a textured oxide buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer, the metal being a component of a III-V compound and forming a layer on the inorganic film on which additional elements from the III-V compound are added, forming a top layer of a tandem solar cell.

Hole transport layers, electron transport layers, layer stacks, and optoelectronic devices involving perovskite materials and materials used as precursors, and methods of making the same, are described.

Architectures for tandem solar cell including two thin films forming a top layer and a bottom layer. Such cells can be bi-facial. Exemplary materials used for the top layer are CIGS (CGS), perovskites (Sn and Ge), amorphous silicon (a-Si), copper oxide, tin sulfide, CZTS and III-V materials. For the bottom layer an inorganic film such as either silicon or germanium may be used. In general, the architecture includes of a glass, plastic or metal substrate and a buffer layer, either an oxide insulator or nitride conductor.

An organic photoelectric conversion element, an imaging device, and an optical sensor, which can detect a plurality of wavelength regions by a single element structure, are provided. The photoelectric conversion element is formed by providing an organic photoelectric conversion portion including two or more types of organic semiconductor materials having different spectral sensitivities between the first and the second electrodes. Wavelength sensitivity characteristics of the photoelectric conversion element change according to a voltage (bias voltage) applied between the first and the second electrodes. The photoelectric conversion element is mounted in the imaging device and the optical sensor.

The present invention refers to a three terminal tandem solar generation unit (1) comprising: —a first absorbing layer (7) made of a perovskite type compound, —a second absorbing layer (11, 11′), —a first and a second interdigitated front contacts (5a, 5b) arranged on the front side of the first absorbing layer (7), the first front contact (5a) having a first polarity and the second front contact (5b) having a second polarity, —a back contact (17, 17′) having the first or the second polarity arranged on the back side of the second absorbing layer (11, 11′), —an interface layer (9, 90, 9′, 90′) arranged between the first (7) and the second (11, 11′) absorbing layers comprising a first semiconductor sub-layer (9a, 90a, 9a′, 90a′) doped according to the first polarity and a second sub-layer (9b, 90b, 9b′, 90b′) doped according to the second polarity and configured for enabling carriers associated with a polarity different than the polarity of the back contact (17, 17′) to be transferred from the second absorbing layer (11, 11′) to the first absorbing layer (7) to be collected by the front contact (5a, 5b) having a polarity different than the polarity of the back contact (17, 17′).