We disclose herein a hetero-structure comprising: a curved material; at least one layer of a first material rolled around the curved material; at least one intermediate layer rolled on the at least one layer of the first material; and at least one layer of a second material rolled around the at least one intermediate layer.

We disclose herein a hetero-structure comprising: a curved material; at least one layer of a first material rolled around the curved material; at least one intermediate layer rolled on the at least one layer of the first material; and at least one layer of a second material rolled around the at least one intermediate layer.

Provided herein are small molecular acceptor compounds containing thiophene end groups, methods for their preparation and intermediates used therein, the use of formulations containing the same as semiconductors in organic electronic devices, especially in organic photovoltaic and organic field-effect transistor devices, and to organic electronic and organic photovoltaic devices made from these formulations.

A method comprising: providing a substrate comprising one or more electronic structures; providing a layer of perovskite overlaying the one or more electronic structures; coating a layer of photoresist material overlaying the layer of perovskite; aligning a mask with the one or more electronic structures and patterning the photoresist material; and using the same etchant to remove sections of the patterned photoresist material and the perovskite underneath the sections of the photoresist material.

The inventive concept provides an organic electronic device and a method of fabricating the same. The organic electronic device includes a flexible substrate configured to include a first region and a second region which are laterally spaced apart from each other, an organic light-emitting diode disposed in the first region of the flexible substrate, and a photodetector disposed in the second region of the flexible substrate, wherein the organic light-emitting diode and the photodetector are disposed on the same plane.

Graphene photodetectors capable of operating in the sub-bandgap region relative to the bandgap of semiconductor nanoparticles, as well as methods of manufacturing the same, are provided. A photodetector can include a layer of graphene, a layer of semiconductor nanoparticles, a dielectric layer, a supporting medium, and a packaging layer. The semiconductor nanoparticles can be semiconductors with bandgaps larger than the energy of photons meant to be detected.

An organic semiconductor detector for detecting radiation has an organic conducting active region, an output electrode and a field effect semiconductor device. The field effect semiconductor device has a biasing voltage electrode and a gate electrode. The organic conducting active region is connected on one side to the field effect semiconductor device and is connected on another side to the output electrode.

According to an embodiment, a detecting element includes a first electrode, a second electrode, an organic conversion layer, a third electrode. The first electrode and the third electrode are configured to keep different potentials by DC power supply. The organic conversion layer is disposed in between the first electrode and the second electrode, and is configured to convert energy of radiation into electrical charge. The third electrode is disposed at least either in the organic conversion layer, or in between the organic conversion layer and the first electrode, or in between the organic conversion layer and the second electrode, and is at least partially covered by an insulating film.

A two-dimensional (2D) hybrid perovskite based opto-electric device includes first and second 2D perovskite layers extending along a given plane; an organic layer sandwiched between the first and second 2D perovskite layers, and extending along the given plane; an external organic layer formed on the first 2D perovskite layer and configured to directly face an ambient of the opto-electric device and to extend along the given plane; and electrical pads directly formed over the external organic layer. A roughness of the external organic layer is smaller than 10 nm.

Embodiments of the subject invention relate to a method and apparatus for infrared (IR) detection. Organic layers can be utilized to produce a phototransistor for the detection of IR radiation. The wavelength range of the IR detector can be modified by incorporating materials sensitive to photons of different wavelengths. Quantum dots of materials sensitive to photons of different wavelengths than the host organic material of the absorbing layer of the phototransistor can be incorporated into the absorbing layer so as to enhance the absorption of photons having wavelengths associated with the material of the quantum dots. A photoconductor structure can be used instead of a phototransistor. The photoconductor can incorporate PbSe or PbS quantum dots. The photoconductor can incorporate organic materials and part of an OLED structure. A detected IR image can be displayed to a user. Organic materials can be used to create an organic light-emitting device.