A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.

A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.

A method for depositing a conductive coating on a surface is provided, the method including treating the surface by depositing fullerene on the surface to produce a treated surface and depositing the conductive coating on the treated surface. The conductive coating generally includes magnesium. A product and an organic optoelectronic device produced according to the method are also provided.

A flexible solar cell is a flexible organic solar cell that can be completed at a low temperature, is easily prepared, and has a relatively low cost and relatively high efficiency. The flexible transparent electrode is prepared by selecting a plastic substrate with silver nanowires embedded therein, and thus, a flexible transparent electrode with better electrical properties, stronger adhesion and better mechanical properties can be obtained. The flexible transparent electrode prepared using the substrate with the silver nanowires embedded therein has lower sheet resistance and higher conductivity. Moreover, on a microstructure, the silver nanowires in the flexible substrate with the silver nanowires embedded therein can induce upper spin-coated silver nanowires to be more uniformly distributed, and can form nodes with the upper spin-coated silver nanowires, such that the adhesion between an upper electrode and the substrate is enhanced, which can further guarantee the good mechanical properties of the electrode.

This application provides a solar cell, including a front electrode, a functional layer, and a back electrode. The front electrode is an electrode on a side of an illuminated surface. The front electrode includes a high-conductivity region and a low-conductivity region that are adjacent to each other, or the back electrode includes a high-conductivity region and a low-conductivity region that are adjacent to each other. The front electrode and/or the back electrode may be designed to be separated by region, and conductivity of one conductive region is designed to be higher than conductivity of the other conductive region. This can effectively avoid a film rectangular resistance loss caused by large-scale non-uniform lateral transfer of a photocurrent, and improve photoelectric conversion efficiency of the cell. In addition, cell comprehensive performance can be improved by flexibly selecting materials based on different requirements of different regions in different application scenarios.

A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer between the first electrode and the second electrode and including a first layer, wherein the first electrode has a work function value of about −5.5 eV to about −6.1 eV, and the interlayer includes a second layer doped with a non-lead-based perovskite compound.

The present disclosure relates to a solar battery. The solar battery comprises a semiconductor structure, a back electrode, and an upper electrode. The semiconductor structure defines a first surface and a second surface. The semiconductor structure comprises an N-type semiconductor layer and a P-type semiconductor layer. The back electrode is located on the first surface. The upper electrode is located on the second surface. The back electrode comprises a first carbon nanotube, the upper electrode comprises a second carbon nanotube, and the first carbon nanotube intersects with the second carbon nanotube. A multilayer structure is formed by an overlapping region of the first carbon nanotube, the semiconductor structure and the second carbon nanotube.

The present invention is a structure of a photodiode, which comprises a substrate; a first electrode is arranged on the substrate; a first transport layer is arranged on the first electrode; a photoactive layer is arranged on the first transport layer, the photoactive layer includes a P-type semiconductor layer and an N-type semiconductor layer. The P-type semiconductor layer and the N-type semiconductor layer have a composition ratio between 1:0.5 and 1:1.5. The photoactive layer has a thickness ranging from 1 μm to 15 m, the photoactive layer has a first energy gap value, and a second electrode is disposed on the photoactive layer.

A detection device includes a photoelectric conversion portion in which a plurality of photodiodes are arranged in a planar shape, a light source configured to irradiate the photodiodes with light, and a heating electrode provided so as to face the photoelectric conversion portion, and configured to generate heat and conduct the heat to the photoelectric conversion portion.

A solid-state imaging element including: a photoelectric conversion layer, a first electrode and a second electrode opposed to each other with the photoelectric conversion layer interposed therebetween, a semiconductor layer provided between the first electrode and the photoelectric conversion layer, an accumulation electrode opposed to the photoelectric conversion layer with the semiconductor layer interposed therebetween, an insulating film provided between the accumulation electrode and the semiconductor layer, and a barrier layer provided between the semiconductor layer and the photoelectric conversion layer.