Methods are described that include contacting an alkyl ammonium metal halide film with an alkyl ammonium halide, where the alkyl ammonium metal halide film includes a first halogen and a metal, the alkyl ammonium halide includes a second halogen, such that the contacting forms an alkyl ammonium metal mixed-halide film that interfaces with the alkyl ammonium metal halide film, where the alkyl ammonium metal mixed-halide film includes the first halogen, the second halogen, and the metal.

The present disclosure provides a back plate for OLED display substrate, and a method for manufacturing the same. The back plate comprises a pixel definition layer comprising a body layer and an interface layer disposed on the surface of the body layer. The interface layer exhibits different lyophilic or lyophobic properties with respect to a functional layer of the OLED depending on the temperature of the interface layer. When the OLED display substrate is manufactured by using the back plate according the present disclosure, the cost can be reduced, and the device yield of the display substrate can be ensured.

A display unit, a display substrate, a driving method of the display substrate and a display device are provided. The display unit includes a first electrode, a second electrode disposed above the first electrode, a functional layer disposed between the first electrode and the second electrode, and the functional layer includes a luminescent material with electrical bistable characteristics. The display unit is provided with the functional layer of the luminescent material with the electrical bistable characteristics, so that the display unit can emit light when being in a high conductivity state and still keep emitting light after being de-energized, and does not emit light when being in a low conductivity state, thereby realizing display and non-display of the display unit.

A quantum-dot (QD) film, which includes a first QD layer including a first QD; and a first protection layer on the first QD layer and including a first organic compound, wherein the first organic compound includes at least two thiol groups, and a first one of the at least two thiol groups is anchored to the first QD, and an LED package, a QD light emitting diode and a display device including the QD film are provided.

A method includes forming a first low-dimensional layer over an isolation layer, forming a first insulator over the first low-dimensional layer, forming a second low-dimensional layer over the first insulator, forming a second insulator over the second low-dimensional layer, and patterning the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator into a protruding fin. Remaining portions of the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator form a first low-dimensional strip, a first insulator strip, a second low-dimensional strip, and a second insulator strip, respectively. A transistor is then formed based on the protruding fin.

An organic field-effect transistor and a fabrication method therefor, including: providing a gate; depositing polymer material onto the gate to form a dielectric layer; performing supercritical fluids treatment on the gate having the dielectric layer deposited; depositing organic semiconductor layer material on the dielectric layer having been processed, to form an organic semiconductor layer; depositing electrode layer material on the organic semiconductor layer and forming an electrode layer. The dielectric properties of the dielectric layer after adopting the supercritical fluids treatment have been significantly improved. While the hysteresis effect of the dielectric layers in the OFET devices has been basically eliminated, the sub-threshold slope of the OFET is also significantly reduced, the carrier mobility is effectively improved. Additionally, an OFET switching rate after being processed is improved, and, by connecting the LEDs in series, the switching rate of the LED is increased.

An organic field-effect transistor and a fabrication method therefor, including: providing a gate; depositing polymer material onto the gate to form a dielectric layer; performing supercritical fluids treatment on the gate having the dielectric layer deposited; depositing organic semiconductor layer material on the dielectric layer having been processed, to form an organic semiconductor layer; depositing electrode layer material on the organic semiconductor layer and forming an electrode layer. The dielectric properties of the dielectric layer after adopting the supercritical fluids treatment have been significantly improved. While the hysteresis effect of the dielectric layers in the OFET devices has been basically eliminated, the sub-threshold slope of the OFET is also significantly reduced, the carrier mobility is effectively improved. Additionally, an OFET switching rate after being processed is improved, and, by connecting the LEDs in series, the switching rate of the LED is increased.

The disclosure provides a precursor solution, a perovskite solar cell and a preparation method thereof. The solute of the precursor solution includes a metal halide, the solvent of the precursor solution is an organic solvent, and the precursor solution contains nanobubbles, which have a diameter not more than 1000 nm, and the zeta potential of the precursor solution does not exceed −20 mV. The method of preparing the precursor solution includes: (1) preparing an organic solvent containing nanobubbles; (2) dissolving a solute in the organic solvent containing nanobubbles. The precursor solution of the disclosure has a very low zeta potential, and the nanobubbles can exist stably in the organic solvent(s) for up to one month. When comparing with traditional methods for preparing the precursor solution of the perovskite cells, the method for preparing the precursor solution of the disclosure can effectively improve the stability, reproducibility and solubility of the metal halide in the organic solvent(s).

A method comprised of combining

##STR00001## form a solution containing a polymer

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In this polymer R, R′, and R″ are independently selected from the group consisting of: H, Cl, F, CN, alkyl, alkoxy, alkylthio, ester, ketone and aryl groups; and X is selected from aryl groups.

The present invention relates to organic electroluminescent devices, the emitting layer thereof containing a blend of a luminescent material having a narrow singlet-triplet gap and a fluorescent emission material having high steric shielding.