A device includes: (1) a substrate; (2) a patterning coating covering at least a portion of the substrate, the patterning coating including a first region and a second region; and (3) a conductive coating covering the second region of the patterning coating, wherein the first region has a first initial sticking probability for a material of the conductive coating, the second region has a second initial sticking probability for the material of the conductive coating, and the second initial sticking probability is different from the first initial sticking probability.

A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

A solar cell includes elements, a connecting portion, and a transparent portion. The elements include first and second elements arrayed in a first direction. The transparent portion is located between the connecting portion and the second element. Each of the elements includes first and second electrode layers and a semiconductor layer interposed between the first and second electrode layers. Between the first element and the second element, their first electrode layers sandwich a first gap and their second electrode layers sandwich a second gap shifted in the first direction from the first gap. The connecting portion electrically connects the second electrode layer of the first element to the first electrode layer of the second element. The transparent portion is located between the second electrode layer of the first element and the first electrode layer of the second element at a position shifted in the first direction from the connecting portion.

An organic light emitting diode display is provided including a first display panel. The first display panel includes a first substrate and a transistor disposed on the first substrate. The transistor includes an input electrode and an output electrode. A second display panel is provided including a second substrate, a first electrode disposed on the second substrate, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer. A first connector is disposed on the output electrode and between the first display panel and the second display panel. The second display panel further includes a first opening formed in the second substrate and a pixel electrode connector disposed in the first opening. The output electrode of the transistor is electrically connected to the first electrode through the first connector, and the first electrode and the first connector are electrically connected through the pixel electrode connector.

A display device in an embodiment includes a base substrate including a first auxiliary display area and a main display area surrounding a first auxiliary display area, a pixel circuit layer disposed on a base substrate, and a light-emitting device layer disposed on a pixel circuit layer and including a plurality of first light-emitting devices disposed in the first auxiliary display area, and each of a plurality of first light-emitting devices includes a pixel electrode, a light-emitting layer disposed on a pixel electrode, and a common electrode disposed on a light-emitting layer and defining a plurality of transmission holes defined in the first auxiliary display area, and a plurality of first light-emitting devices and a plurality of transmission holes are alternately arranged in a plan view.

A flexible organic light emitting diode display and a manufacturing method thereof are provided. The manufacturing method includes steps of forming an active array layer and a photoresist layer sequentially on a flexible substrate, patterning the photoresist layer to form a plurality of pixel units, forming a light emitting main layer between two of the pixel units adjacent to each other, removing the pixel units with an organic solvent, forming a conductive transport layer on the light emitting main layer, and forming an encapsulation layer on the conductive transport layer.

The invention provides an OLED display panel and a method for manufacturing the same. The OLED display panel includes a flexible substrate. The surface of the flexible substrate defines a display area, a bending area, and a binding area. A signal wiring layer is provided in the bending area. A buffer layer comprising patterned holes is provided on the flexible substrate corresponding to the bending area, and the neutral layer of the bending area is adjusted into the signal wiring layer to prevent the signal wiring from being broken and improve the anti-bending performance.

A manufacturing method of a display panel and a display panel are provided. The advantages thereof are that a shadow area of an edge of a pixel caused by an angle of evaporation can be avoided and reduced, a pixel position accuracy (PPA) shift caused by raising a temperature of a fine metal mask during a coating process can be prevented, and it is applicable to manufacture of high-resolution display panels.

A manufacturing method of a thin film transistor is provided, which includes steps of: providing a flexible substrate with an active layer formed thereon; providing a dielectric layer disposed on the active layer, wherein the dielectric layer has openings; providing a heavily doped silicon layer in the openings, wherein the heavily doped silicon layer is connected to the active layer, extends upward along a sidewall of the openings, and covers an upper surface of the dielectric layer, and the heavily doped silicon layer configured as at least one source/drain; and providing a metal layer in the openings and on the at least one source/drain, wherein the metal layer is connected to the at least one source/drain. The active layer and the source/drain are formed as a same semiconductor material, so that contact resistance can be effectively lowered, thereby improving energy consumption.

A mask plate and a manufacturing method thereof, a flexible substrate stripping apparatus and a flexible substrate stripping method are provided. The mask plate includes a laser-transmitting substrate and a patterned laser-shielding layer located on the laser transmitting substrate.