Objects of the present invention is to provide an organic semiconductor element having high mobility and to provide a composition for forming an organic semiconductor film with which an organic semiconductor film having high mobility can be formed, a method of manufacturing an organic semiconductor element formed from the composition for forming an organic semiconductor film, and a method of manufacturing an organic semiconductor film.

The organic semiconductor element according to the present invention has a semiconductor active layer including a compound that is represented by Formula 1 and has a molecular weight of 3,000 or less. The composition for forming an organic semiconductor film according to the present invention contains a compound that is represented by Formula 1 and has a molecular weight of 3,000 or less, and a solvent.

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Active emissive layers (e.g., of a light-emitting electrochemical cell (LEC)) are provided and can comprise zero-dimensional (0D) perovskite material in combination with a three-dimensional (3D) perovskite material, as well as electroluminescent devices (e.g., LECs) utilizing such active emissive layers and methods of fabricating and using such active emissive layers and electroluminescent devices. The 0D perovskite material can be incorporated into a matrix film of the 3D perovskite material. The 0D perovskite material can be, for example, perovskite nanocrystals (PNCs). The 0D perovskite material can be, for example, Cs.sub.4PbBr.sub.6, and the 3D perovskite material can be, for example, CsPbBr.sub.3.

A method including depositing a lead halide precursor ink onto a substrate; drying the lead halide precursor ink to form a first thin film; annealing the first thin film; and forming a perovskite material layer, wherein forming the perovskite material layer includes: depositing a benzylammonium halide precursor ink onto the first thin film; drying the benzylammonium halide precursor ink; depositing a formamidinium halide precursor ink onto the benzylammonium halide precursor ink; drying the formamidinium halide precursor ink to form a second thin film; and annealing the second thin film.

A method for making a layered perovskite structure comprises: a) performing a vapor assisted surface treatment (VAST) of a substrate with a surface passivating agent; b) applying a layer of PbI.sub.2 to the passivating agent; c) exposing the PbI.sub.2 to methylammonium iodide (CH.sub.3NH.sub.3I) in an orthogonal solvent; and d) annealing the structure. A PEDOT:PSS coated ITO glass substrate may be used. The surface passivation agent may be one a chalcogenide-containing species with the general chemical formula (E.sub.3E.sub.4)N(E.sub.1E.sub.2)N′C═X where any one of E.sub.1, E.sub.2, E.sub.3 and E.sub.4 is independently selected from C1-C15 organic substituents comprising from 0 to 15 heteroatoms or hydrogen, and X is S, Se or Te, thiourea, thioacetamide, selenoacetamide, selenourea, H.sub.2S, H.sub.2Se, H.sub.2Te or LXH wherein L is a C.sub.n organic substituent comprising heteroatoms and X═S, Se, or Te. The passivating agent may be applied by spin-coating, inkjet-printing, slot-die-coating, aerosol-jet printing, PVD, CVD, and electrochemical deposition.

A method of fabricating a large-area perovskite film includes steps of: providing a precursor solution on a conductive substrate to form a film, wherein the perovskite is represented by a formula of ABX.sub.3, and the solutes of the precursor solution at least comprises A, B and X; and applying an anti-solvent or Infrared light on the film. The fabrication methods of a large-area perovskite film and a perovskite solar cell or module are also disclosed.

A perovskite light-emitting diode and a method of manufacturing the same are provided. The method includes steps of providing a substrate, disposing a first electrode layer, a hole transport layer, and a perovskite precursor liquid layer on the substrate, coating the perovskite precursor liquid layer with a first solvent, performing a first thermal process to form a perovskite prefabricated layer, coating the perovskite prefabricated layer with a second solvent, and performing a second thermal process to form a perovskite light-emitting layer.

The present disclosure relates to a composition that includes a first layer that includes a perovskite defined by ABX.sub.3 and a second layer that includes a perovskite-like material defined by at least one of A′.sub.2B′X′.sub.4, A′.sub.3B′.sub.2X′.sub.9, A′B′X′.sub.4, A′.sub.2B′X′.sub.6, and/or A′.sub.2AB′.sub.2X′.sub.7, where the first layer is adjacent to the second layer, A is a first cation, B is a second cation, X is a first anion, A′ is a third cation, B′ is a fourth cation, X′ is a second anion, and A′ is different than A.

A method of preparing a bulk heterojunction organic photovoltaic cell through combinations of thermal and solvent vapor annealing are described. Bulk heterojunction films may prepared by known methods such as spin coating, and then exposed to one or more vaporized solvents and thermally annealed in an effort to enhance the crystalline nature of the photoactive materials.

A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.

A light-emitting device and a manufacturing method thereof are disclosed. The manufacturing method of the light-emitting device includes: forming a function layer that has a first surface; performing plasma treatment on the first surface of the function layer; and forming a perovskite-type light-emitting layer on the first surface treated by the plasma treatment.