There is provided a laminated substrate having a piezoelectric film, including: a substrate; and a piezoelectric film provided on the substrate interposing a base film, wherein the piezoelectric film has an alkali niobium oxide based perovskite structure represented by a composition formula of (K.sub.1-xNa.sub.x)NbO.sub.3 (0<x<1) and preferentially oriented in (001) plane direction, and a sound speed of the piezoelectric film is 5100 m/s or more.

A vibration generating device 10 includes: a diaphragm 11; and a first piezoelectric actuator 12 and a second piezoelectric actuator 13 attached on an upper surface 11a and a lower surface 11b of the diaphragm 11, respectively, so as to sandwich the diaphragm 11 therebetween in a vicinity of an end surface of the diaphragm 11, wherein, in a top view of the upper surface 11a of the diaphragm 11, the first piezoelectric actuator 12 is disposed at a position shifted with respect to the second piezoelectric actuator 13.

An acoustic resonator device with low thermal impedance has a substrate and a single-crystal piezoelectric plate having a back surface attached to a top surface of the substrate via a bonding oxide (BOX) layer. An interdigital transducer (IDT) formed on the front surface of the plate has interleaved fingers disposed on the diaphragm, the overlapping distance of the interleaved fingers defining an aperture of the resonator device. Contact pads are formed at selected locations over the surface of the substrate to provide electrical connections between the IDT and contact bumps to be attached to the contact pads. The piezoelectric plate is removed from at least a portion of the surface area of the device beneath each of the contact pads to provide lower thermal resistance between the contact bumps and the substrate.

The present disclosure provides a piezoelectric sensor, a pressure detecting device, their manufacturing methods and a detection method. The piezoelectric sensor comprises a thin film transistor located on a substrate and comprising an active layer, and a piezoelectric layer that is in contact with the active layer of the thin film transistor.

A method of making an acoustic sensor (e.g., a piezoelectric sensor for a piezoelectric microelectromechanical systems microphone) includes forming or depositing one or more piezoelectric layers to define a beam extending between a proximal portion and a distal tip (e.g., unsupported free end), the beam having a width in plan view that is greater at a location distal of the proximal portion than at the proximal portion. The method also comprises attaching the beam to a substrate in cantilever form so that the proximal portion of the beam is anchored to the substrate and the distal tip is a free unsupported end of the beam. One or more electrodes are disposed on or in the proximal portion of the beam.

The disclosure provides a piezoelectric element and a method for manufacturing a piezoelectric element. The disclosure provides the piezoelectric element comprising: a base layer, a piezoelectric layer which is disposed on one surface of the base layer, and in which upwardly curved convex portions and downwardly curved concave portions are continuously disposed along a first direction; and contact members which are disposed on the concave portions of the piezoelectric layer and on the one surface of the base layer to connect the piezoelectric layer to the base layer.

A multi-layered piezoelectric ceramic-containing structure There is provided a multi-layered piezoelectric ceramic-containing structure comprising: a metal substrate; a metallic adhesive layer on a surface of the metal substrate; a non-metallic thermal barrier layer on the metallic adhesive layer; and a piezoelectric ceramic layer sandwiched between a first electrode layer and a second electrode layer, wherein the first electrode layer is on the non-metallic thermal barrier layer. There is also provided a method of forming the structure.

In some embodiments, a piezoelectric biosensor is provided. The piezoelectric biosensor includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A sensing reservoir is disposed over the piezoelectric structure and exposed to an ambient environment, where the sensing reservoir is configured to collect a fluid comprising a number of bio-entities.

A method of manufacturing a semiconductor device includes: forming a first substrate includes a membrane stack over a first dielectric layer, the membrane stack having a first electrode, a second electrode over the first electrode and a piezoelectric layer between the first electrode and the second electrode, a third electrode over the first dielectric layer, and a second dielectric layer over the membrane stack and the third electrode; forming a second substrate, including: a redistribution layer (RDL) over a third substrate, the RDL having a fourth electrode; and a first cavity on a surface of the RDL adjacent to the fourth electrode; forming a second cavity in one of the first substrate and the second substrate; and bonding the first substrate to the second substrate.

Various embodiments of the present disclosure are directed towards an integrated chip including a piezoelectric membrane overlying a substrate. A plurality of conductive layers is disposed within the piezoelectric membrane. The plurality of conductive layers comprises a first conductive layer over a second conductive layer. The first conductive layer comprises a first electrode and the second conductive layer comprises a second electrode. A first conductive via is disposed in the piezoelectric membrane and contacts the first electrode. A second conductive via is disposed in the piezoelectric membrane and contacts the second electrode. A sidewall of the second conductive via comprises a vertical sidewall segment overlying a slanted sidewall segment.