An ultrasound transducer used in an ultrasound system and a manufacturing method thereof includes: a backing block; a piezoelectric layer placed on the backing block; a matching layer placed on the piezoelectric layer; and a ground layer placed between the piezoelectric layer and the matching layer. The backing layer includes a connector that connects a transmitting unit and a receiving unit of an ultrasound system, and a wiring area that connects the piezoelectric layer and the connector. The wiring area is formed by etching and filling with metal material.

Various embodiments may relate to an acoustic resonator. The acoustic resonator may include a piezoelectric layer. The acoustic resonator may also include a first electrode in contact with a first surface of the piezoelectric layer. The acoustic resonator may further include a plurality of dielectric structures in contact with the first surface of the piezoelectric layer. The acoustic resonator may additionally include a second electrode in contact with a second surface of the piezoelectric layer opposite the first surface. The first electrode may include a plurality of electrode structures. A dielectric structure of the plurality of dielectric structures may be in contact with a pair of neighboring electrode structures of the plurality of electrode structures.

Various embodiments may relate to an acoustic resonator. The acoustic resonator may include a piezoelectric layer. The acoustic resonator may also include a first electrode in contact with a first surface of the piezoelectric layer. The acoustic resonator may further include a plurality of dielectric structures in contact with the first surface of the piezoelectric layer. The acoustic resonator may additionally include a second electrode in contact with a second surface of the piezoelectric layer opposite the first surface. The first electrode may include a plurality of electrode structures. A dielectric structure of the plurality of dielectric structures may be in contact with a pair of neighboring electrode structures of the plurality of electrode structures.

The present invention discloses a method for creating spin-affected electric currents passively and feeding them into electric devices. The invention can be realized as either a rectangular black box incorporating coatings on top of and on the bottom of a conducting volume of material, or by coating a round-shaped wire or thread(s) of a cable. This is obtained by using a specific coating material on the conducting piece of material. The material may be piezoelectric, such as silicon dioxide (i.e. quartz) but also silicon carbide (SiC) may be used. Also, mixtures and composite arrangements are possible in order to create a coating. The manufactured add-on unit, when supplied with the input power or input signal, will act as an electron spin feeding device to the electric device because the electrons will be moving strongly within the interface area of the coating and the conducting material with aligned spins. The resulting effect also lasts longer within the electric device than just the time when the add-on unit is connected to the electric device.

Microelectromechanical (MEMS) devices and associated methods are disclosed. Piezoelectric MEMS transducers (PMUTs) suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuit (IC), as well as PMUT arrays having high fill factor for fingerprint sensing, are described.

An acoustic wave filter includes a substrate, a first resonator disposed on the substrate, a second resonator disposed on the substrate to be spaced apart from the first resonator, a connector electrically connecting the first and second resonators, and a variable capacitor formed in the connector to tune a pass band frequency of the acoustic wave filter.

A device with a membrane comprising a support, a membrane made of a polymer material suspended on said support and at least one actuating module arranged opposite a face of the membrane and separate from said membrane, said actuating module comprising at least one actuator comprising at least one piezoelectric material and a beam connected to the support and separate from the membrane, the piezoelectric material being connected to the beam, such that, when a difference in electric potential is applied to the piezoelectric material, a bimetal effect appears between the piezoelectric material and the beam deforming the beam in the direction of the membrane, causing the deformation of the membrane, said device also comprising at least one electrostatic actuator configured for compressing at least one part of the membrane on the at least one part of the actuating module.

Microelectromechanical (MEMS) devices and associated methods are disclosed. Piezoelectric MEMS transducers (PMUTs) suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuit (IC), as well as PMUT arrays having high fill factor for fingerprint sensing, are described.

A piezoelectric micromechanical ultrasonic transducer (PMUT) includes a multilayer stack disposed on a substrate. The multilayer stack may include an anchor structure disposed over the substrate, a piezoelectric layer stack disposed over the anchor structure, and a mechanical layer disposed proximate to the piezoelectric layer stack. The piezoelectric layer stack may be disposed over a cavity. The mechanical layer may seal the cavity and, together with the piezoelectric layer stack, is supported by the anchor structure and forms a membrane over the cavity, the membrane being configured to undergo one or both of flexural motion and vibration when the PMUT receives or transmits ultrasonic signals.

A method for producing a plurality of piezoelectric ultrasound transducer elements, the method comprising providing or depositing a piezoelectric material on at least part of a surface of a sheet of substrate to form a layered member; and forming the one or more piezoelectric ultrasound transducer elements from the layered member.