A piezoelectric device including a substrate, a metal-insulator-metal element, a hydrogen blocking layer, a passivation layer, a first contact terminal and a second contact terminal is provided. The metal-insulator-metal element is disposed on the substrate. The hydrogen blocking layer is disposed on the metal-insulator-metal element. The passivation layer covers the hydrogen blocking layer and the metal-insulator-metal element. The first contact terminal is electrically connected to the metal-insulator-metal element. The second contact terminal is electrically connected to the metal-insulator-metal element.

An electromechanical transducer element includes a first electrode on a diaphragm, an electromechanical transducer film on the first electrode, and a second electrode on the electromechanical transducer film. The electromechanical transducer film has a stacking structure. The electromechanical transducer film has a linear tapered shape that narrows from a first side facing the first electrode to a second side facing the second electrode in a cross section along a stacking direction.

In a non-limiting embodiment, a device may include a substrate, and a hybrid active structure disposed over the substrate. The hybrid active structure may include an anchor region and a free region. The hybrid active structure may be connected to the substrate at least at the anchor region. The anchor region may include at least a segment of a piezoelectric stack portion. The piezoelectric stack portion may include a first electrode layer, a piezoelectric layer over the first electrode layer, and a second electrode layer over the piezoelectric layer. The free region may include at least a segment of a mechanical portion. The piezoelectric stack portion may overlap the mechanical portion at edges of the piezoelectric stack portion.

A piezoelectric device including a substrate, a metal-insulator-metal element, a hydrogen blocking layer, a passivation layer, a first contact terminal and a second contact terminal is provided. The metal-insulator-metal element is disposed on the substrate. The hydrogen blocking layer is disposed on the metal-insulator-metal element. The passivation layer covers the hydrogen blocking layer and the metal-insulator-metal element. The first contact terminal is electrically connected to the metal-insulator-metal element. The second contact terminal is electrically connected to the metal-insulator-metal element.

Methods for producing ceramic multi-layer components and multi-layer components made by such methods. A method includes the following steps: providing green layers for the ceramic multi-layer components, stacking the green layers into a stack and subsequently pressing the stack into a block, singulating the block into partial blocks each having a longitudinal direction, thermally treating the partial blocks and subsequently machining surfaces of the partial blocks. Recesses are produced on the surfaces of the partial blocks during the machining, and the partial blocks are singulated.

A piezoelectric generator is specified, comprising a deformation body, which spans a projection surface and is embodied with a setpoint pressure surface situated opposite the projection surface, wherein the projection surface can be converted from a smaller projection surface when not loaded under pressure into a larger projection surface when pressure is applied to the setpoint pressure surface substantially perpendicular to the projection surface, and a spring effect is provided which counteracts an application of pressure to the setpoint pressure surface, wherein an electromechanical transducer element comprising a piezoelectric material wholly or partly spans the projection surface, such that the transducer element is embodied in an expandable fashion upon pressure being applied to the deformation body, and electrical microenergy can be generated by means of the piezoelectric material.

There is provided a piezoelectric actuator, including: a vibration plate; a first piezoelectric body; a second piezoelectric body; a first electrode disposed on a first surface of the first piezoelectric body; a second electrode disposed on a second surface of the second piezoelectric body; an intermediate electrode disposed on an intermediate surface of the first piezoelectric body and overlapping with the first and second electrodes; an intermediate trace connected to the intermediate electrode on the intermediate surface and drawn out to one side in a first direction beyond the first piezoelectric body and the second piezoelectric body; a first trace overlapping with the intermediate trace in the thickness direction and being conducted with the intermediate trace; and a second trace overlapping with the intermediate trace in the thickness direction and being conducted with the intermediate trace.

A wafer level ultrasonic chip module includes a substrate, a composite layer, a conducting material, and a base material. The substrate has a through slot that passes through an upper surface of the substrate and a lower surface of the substrate. The composite layer includes an ultrasonic body and a protective layer. A lower surface of the ultrasonic body is exposed from the through slot. The protective layer covers the ultrasonic body and a partial upper surface of the substrate. The protective layer has an opening, from which a partial upper surface of the ultrasonic body is exposed. The conducting material is in contact with the upper surface of the ultrasonic body. The base material covers the through slot, such that a space is formed among the through slot, the lower surface of the ultrasonic body and an upper surface of the base material.

A piezoelectric actuator includes: a vibration plate: a first piezoelectric body arranged on one side in a thickness direction of the vibration plate; a second piezoelectric body arranged on a side, of the first piezoelectric body, opposite to the vibration plate in the thickness direction; a first electrode arranged between the vibration plate and the first piezoelectric body; a second electrode arranged between the first and second piezoelectric bodies in the thickness direction, and overlapping with the first electrode in the thickness direction; and a third electrode arranged on a side, of the second piezoelectric body, opposite to the first piezoelectric body in the thickness direction, and overlapping with the second electrode in the thickness direction. The second piezoelectric body covers at least a part of a first end surface, of the first piezoelectric body, which is an end surface in a first direction orthogonal to the thickness direction.

Various embodiments of the present disclosure are directed towards a piezoelectric metal-insulator-metal (MIM) device including a piezoelectric structure between a top electrode and a bottom electrode. The piezoelectric layer includes a top region overlying a bottom region. Outer sidewalls of the bottom region extend past outer sidewalls of the top region. The outer sidewalls of the top region are aligned with outer sidewalls of the top electrode. The piezoelectric layer is configured to help limit delamination of the top electrode from the piezoelectric layer.