A piezoelectric device includes: a first electrode provided above a substrate; a piezoelectric layer provided above the first electrode; and a second electrode provided above the piezoelectric layer. The piezoelectric layer includes a plurality of layers that includes a composite oxide of a Perovskite structure containing potassium, sodium, and niobium. The piezoelectric layer has a first region and a second region in a 3 m3 m region of a plane perpendicular to a thickness direction of the piezoelectric layer. The first region is a region in which the ratio of an atomic concentration (atm %) of potassium with respect to the sum of the atomic concentration (atm %) of potassium and an atomic concentration (atm %) of sodium is 0.30 to 0.45, and the second region is a region in which the ratio is 0.55 to 0.75.

A piezoelectric device including a substrate, a metal-insulator-metal element, a hydrogen blocking layer, a passivation layer, a first contact terminal and a second contact terminal is provided. The metal-insulator-metal element is disposed on the substrate. The hydrogen blocking layer is disposed on the metal-insulator-metal element. The passivation layer covers the hydrogen blocking layer and the metal-insulator-metal element. The first contact terminal is electrically connected to the metal-insulator-metal element. The second contact terminal is electrically connected to the metal-insulator-metal element.

A germanium-containing aluminum nitride piezoelectric film and a method for manufacturing an aluminum nitride piezoelectric film in which a germanium-containing aluminum nitride piezoelectric film is grown on a substrate by sputtering.

Various embodiments of the present disclosure are directed towards an integrated chip including a dielectric structure sandwiched between a first electrode and a bottom electrode. A passivation layer overlies the second electrode and the dielectric structure. The passivation layer comprises a horizontal surface vertically below a top surface of the passivation layer. The horizontal surface is disposed above a top surface of the dielectric structure.

Provided are a piezoelectric element having high stability, which operates with high efficiency, and a method for manufacturing the piezoelectric element. The piezoelectric element (10) has a laminate structure in which a first electrode (14), a first piezoelectric film (16), a second electrode (18), an adhesion layer (20), an interlayer (22), a third electrode (24), a second piezoelectric film (26), and a fourth electrode (28) are laminated in this order on a silicon substrate (12). The interlayer (22) is formed of a material different from that of the second electrode (18) and has a thickness of 0.4 ?m to 10 ?m. A device having a diaphragm structure or a cantilever structure is formed by removing a part of the silicon substrate (12). The respective layers (14 to 28) laminated on the silicon substrate (12) can be formed using a thin film formation method represented by a vapor phase epitaxial method.

A film transducer has a holding part and an electroactive multilayer composite structure including at least two deformable carriers which are each coated on at least one side with a planar electrode. The multilayer composite structure has an elongated basic shape and being clamped on its shorter sides in a fixing section in the holding part while its longer sides are free, the electrodes of the multilayer composite structure being alternately connected at the ends clamped in the holding part to a contact element which is arranged in the fixing section.

A method for producing a multi-layer electrode system includes providing a carrier substrate having a recess in a top side of the carrier substrate. At least one wall of the recess is inclined in relation to a bottom side of the carrier substrate, which is opposite to the top side. The method also includes applying a multi-layer stack, which includes at least a first electrode layer, a second electrode layer, and a piezoelectric layer arranged between the first electrode layer and the second electrode layer, to the top side of the carrier substrate. At least the wall and a bottom of the recess are covered by at least a portion of the multi-layer stack.

There is disclosed a piezoelectric thin film element comprising a first electrode, a second electrode and one or more piezoelectric thin films there between characterised in that the thin film element has at least two of: an electrode arrangement in which electrodes are arranged with the one or more piezoelectric thin films so that an electric field applied to a piezoelectric thin film or a portion of a piezoelectric thin film adjacent to the first electrode is lower than an electric field applied to a piezoelectric thin film or a portion of a piezoelectric thin film further from the first electrode when the piezoelectric thin film element actuated; a piezoelectric thin film adjacent to the first electrode in which a layer of the piezoelectric thin film near to the first electrode has a piezoelectric displacement constant which is lower than that of a layer of the piezoelectric thin film further from the first electrode; and a piezoelectric thin film adjacent to the first electrode in which a layer of the piezoelectric thin film near to the first electrode has an elastic modulus which is lower than that of a layer of the piezoelectric thin film further from the first electrode.

Various embodiments of the present disclosure are directed towards an integrated chip including a first conductive structure and a second conductive structure. A dielectric structure is arranged between the first conductive structure and the second conductive structure. The dielectric structure comprises an upper region over a lower region. The lower region comprises a first lateral surface and a second lateral surface on opposing sides of the upper region. A passivation layer overlies the second conductive structure and the dielectric structure. The passivation layer comprises a lateral segment contacting the first lateral surface. A height of the lateral segment is greater than a height of the upper region. A top surface of the lateral segment is below a top surface of the passivation layer.

In an embodiment a device includes a piezoelectric multilayer element having a top surface and being configured to change its extension in a first direction in response to an applied voltage, a mechanical amplifying element having an end portion fixed to the top surface of the piezoelectric multilayer element and an active portion movable relative to the piezoelectric multilayer element, wherein the mechanical amplifying element is configured such that the active portion is movable in a second direction perpendicular to the first direction when an extension of the piezoelectric multilayer element changes, the second direction being parallel to a surface normal of the top surface and a mechanical stop limiting a distance by which the active portion is movable towards the top surface.