An oxide superconducting wire wherein an outer periphery of an oxide superconductor is covered with a plating layer (stabilizing layer). In addition, the oxide superconductor includes: an oxide superconducting laminate that is formed by a tape-shaped substrate, an interlayer, and an oxide superconducting layer, in which the interlayer and the oxide superconducting layer are laminated on a main surface of the substrate; and an undercoat stabilizing layer that is laminated on an outer periphery of the oxide superconducting laminate. The undercoat stabilizing layer includes: a first undercoat stabilizing layer formed of Ag or an Ag alloy; and a second undercoat stabilizing layer formed of one of Cu, Ni, Pb, Bi, and an alloy containing Cu, Ni, Pb or Bi as a major component.

An ultra-thin film superconducting tape and method for fabricating same is disclosed. Embodiments are directed to a superconducting tape being fabricated by processes which include removing a portion of the superconducting tape's substrate subsequent the substrate's initial formation, whereby a thickness of the superconducting tape is reduced to 15-80 ?m.

A superconducting material includes YBa.sub.2Cu.sub.3O.sub.7-? and a nano-structured, preferably nanowires, WO.sub.3 dopant in a range of from 0.01 to 3.0 wt. %, preferably 0.075 to 0.2 wt. %, based on total material weight. Methods of making the superconductor may preferably avoid solvents and pursue solid-state synthesis employing Y, Ba, and/or Cu oxides and/or carbonates.

Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.

The present invention relates to a method and an apparatus for producing superconducting devices and to superconducting devices. The method comprises determining one or more regions of reduced critical current density in the superconducting device and modifying the critical current density in the one or more regions of reduced critical current density, so as to increase the overall critical current or to decrease the overall AC losses of the superconducting device. The modifying comprises modifying the amount and/or distribution of the superconducting material in the one or more regions of reduced critical current density; and/or modifying the chemical composition of the superconducting material in the one or more regions of reduced critical current density; and/or decreasing the cooling temperature in the one or more regions of reduced critical current density. A superconducting device formed according to such method can also be provided.

In a high-temperature superconducting conductor 10, a laminated body 15 is formed by laminating a high-temperature superconducting layer 14 on one side surface of a flexible and tape-shaped metal substrate 12 via an intermediate layer 13, and a plurality of thin film wires 11 are formed by providing a stabilization layer 17 around the laminated body 15 via a protective layer 16 and are arranged in a thickness direction. The plurality of thin film wires 11 are connected at both ends in a width direction to each other in a conductible state in a longitudinal direction by means of conductive coupling member 20, in such a manner that a thin film wire 11 disposed at an outermost side is positioned with a surface 18 on a side of the metal substrate 12 directed outward and a surface 19 of each of the plurality of thin film wires 11 facing the high-temperature superconducting layer 14 is held in a non-fixed state with respect to an opposing surface.

A superconducting coil includes: a winding member 12 that has a side surface 18 along a coil radial direction and is formed by laminating a superconducting tape wire 20 in the coil radial direction by winding; and a bypass 19 that is provided on the side surface 18 of the winding member 12 and electrically connects the superconducting tape wire 20 in the coil radial direction.

An interconnect may have a first end coupled to a superconducting system and a second end coupled to a non-superconducting system. The interconnect may include a superconducting element having a critical temperature. During operation of the superconducting system and the non-superconducting system, a first portion of the interconnect near the first end may have a first temperature equal to or below the critical temperature of the superconducting element, a second portion of the interconnect near the second end may have a second temperature above the critical temperature of the superconducting element, and the interconnect may further be configured to reduce a length of the second portion such that temperature substantially over an entire length of the interconnect is maintained at a temperature equal to or below the critical temperature of the superconducting element.

A superconductor wire having a first HTS layer with a first cap layer in direct contact with a first surface of the first HTS layer and a second cap layer in direct contact with a second surface of the first HTS layer. There is a first lamination layer affixed to the first cap layer and a stabilizer layer having a first surface affixed to the second cap layer. There is a second HTS layer and a third cap layer in direct contact with a first surface of the second HTS layer and a fourth cap layer in direct contact with a second surface of the second HTS layer. There is a second lamination layer affixed to the fourth cap layer. The second surface of the stabilizer layer is affixed to the third cap layer and there are first and second fillets disposed along a edge of the laminated superconductor.

An oxide superconducting wire includes: a laminate which is formed by laminating a tape-shaped base, an intermediate layer, and an oxide superconducting layer; a first protective layer which is formed of Ag or an Ag alloy and is laminated on a main surface of the oxide superconducting layer of the laminate; a second protective layer which is formed of Cu or a Cu alloy, is laminated on a main surface of the first protective layer by performing film formation one or more times, and has a thickness of 0.3 m to 10 m; and a stabilization layer which is bonded to a main surface of the second protective layer with a solder layer interposed therebetween, wherein the second protective layer is formed to have a thickness of equal to or less than 2.1 m per film formation.