Patent classifications
H10N60/805
SYSTEMS AND METHODS FOR FABRICATING SUPERCONDUCTING INTEGRATED CIRCUITS
A system and method for mitigating flux trapping in a superconducting integrated circuit. A first metal layer is formed having a first critical temperature and a first device, and a flux directing layer is formed having a second critical temperature. The flux directing layer is positioned in communication with an aperture location, and the aperture location is spaced from the first device to isolate the first device from flux trapped in the aperture. The superconducting integrated circuit is cooled from a first temperature that is above both the first and second critical temperatures to a second temperature that is less than both the first and second critical temperatures by a cryogenic refrigerator. A relative temperature difference between the first and second critical temperatures causes the flux directing layer to direct flux away from the first device and trap flux at the aperture location.
Superconducting qubit device packages
One superconducting qubit device package disclosed herein includes a die having a first face and an opposing second face, and a package substrate having a first face and an opposing second face. The die includes a quantum device including a plurality of superconducting qubits and a plurality of resonators on the first face of the die, and a plurality of conductive pathways coupled between conductive contacts at the first face of the die and associated ones of the plurality of superconducting qubits or of the plurality of resonators. The second face of the package substrate also includes conductive contacts. The device package further includes first level interconnects disposed between the first face of the die and the second face of the package substrate, coupling the conductive contacts at the first face of the die with associated conductive contacts at the second face of the package substrate.
Nanostructured biomimetic protein superconductive devices of making and its multiple applications thereto
A multiple functioning superconductive device was invented based on Toroidal Josephson Junction (FFTJJ) array with 3D-cage structure self-assembled organo-metallic superlattice membrane. The device not only mimics the structure and function of an activated Matrix Metalloproteinase-2 (MMP-2) protein, but also mimics the cylinder structure of the Heat Shock Protein (HSP60) protein, that works at room temperature under a normal atmosphere, and without external electromagnetic power applied. The device enabled direct rapid real-time monitoring atto-molarity concentration ATP in biological specimens and was able to define the anti-inflammatory and pro-inflammatory status revealed a transitional range of ATP concentration under antibody-free, tracer-free and label-free conditions.
JOSEPHSON JUNCTIONS WITH REDUCED STRAY INDUCTANCE
Methods, systems and apparatus for forming Josephson junctions with reduced stray inductance. In one aspect, a device includes a substrate; a first superconductor layer on the substrate; an insulator layer on the first superconductor layer; a second superconductor layer on the insulator layer, wherein the first superconductor layer, the insulator layer, and the second superconductor layer form a superconductor tunnel junction; and a third superconductor layer directly on a surface of the first superconductor layer and directly on a surface of the second superconductor layer to provide a first contact to the superconducting tunnel junction and a second contact to the superconductor tunnel junction, respectively.
SUPERCONDUCTING QUBIT AND RESONATOR SYSTEM BASED ON THE JOSEPHSON RING MODULATOR
A superconducting quantum mechanical device includes first, second, third and fourth Josephson junctions connected in a bridge circuit having first, second and third resonance eigenmodes. The device also includes first and second capacitor pads. The first and second capacitor pads and the bridge circuit form a superconducting qubit having a resonance frequency corresponding to the first resonance eigenmode. The device further includes first and second resonator sections. The first and second resonator sections and the bridge circuit form a resonator having a resonance frequency corresponding to the second resonance eigenmode. The device also includes a source of magnetic flux arranged proximate the bridge circuit. The source of magnetic flux is configured to provide, during operation, a magnetic flux through the bridge circuit to cause coupling between the first, second and third resonance eigenmodes when the third resonance eigenmode is excited.
Josephson voltage standard
A Josephson voltage standard includes: electrical conductors that receive bias currents and radiofrequency biases; a first Josephson junction array that: includes a first Josephson junction and produces a first voltage reference from the first bias current and the third bias current; a second Josephson junction array in electrical communication with the first Josephson junction array and that: includes a second Josephson junction; receives the second bias current; receives the third bias current; receives the second radiofrequency bias; and produces a second voltage reference from the second bias current and the third bias current; a first voltage reference output tap in electrical communication with the first Josephson junction array and that receives the first voltage reference from the first Josephson junction array such that the first voltage reference is electrically available at the first voltage reference output tap; and a second voltage reference output tap.
Quantum dot devices with fins
Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a substrate and a quantum well stack disposed on the substrate. The quantum well stack may include a quantum well layer and a back gate, and the back gate may be disposed between the quantum well layer and the substrate.
Vertical silicon-on-metal superconducting quantum interference device
Techniques related to vertical silicon-on-metal superconducting quantum interference devices and method of fabricating the same are provided. Also provided are associated flux control and biasing circuitry. A superconductor structure can comprise a silicon-on-metal substrate that can comprise a first superconducting layer, comprising a first superconducting material, between a first crystalline silicon layer and a second crystalline silicon layer. The superconducting structure can also comprise a first via comprising a first Josephson junction and a second via comprising a second Josephson junction. The first via and the second via can be formed between the first superconducting layer and a second superconducting layer, comprising a second superconducting material. An electrical loop around a defined area of the second crystalline silicon layer can comprise the first via comprising the first Josephson junction, the second via comprising the second Josephson junction, the first superconducting layer, and the second superconducting layer.
Superconducting qubit and resonator system based on the Josephson ring modulator
A superconducting quantum mechanical device includes first, second, third and fourth Josephson junctions connected in a bridge circuit having first, second and third resonance eigenmodes. The device also includes first and second capacitor pads. The first and second capacitor pads and the bridge circuit form a superconducting qubit having a resonance frequency corresponding to the first resonance eigenmode. The device further includes first and second resonator sections. The first and second resonator sections and the bridge circuit form a resonator having a resonance frequency corresponding to the second resonance eigenmode. The device also includes a source of magnetic flux arranged proximate the bridge circuit. The source of magnetic flux is configured to provide, during operation, a magnetic flux through the bridge circuit to cause coupling between the first, second and third resonance eigenmodes when the third resonance eigenmode is excited.
Superconducting qubit capacitance and frequency of operation tuning
A method for adjusting a resonance frequency of a qubit in a quantum mechanical device includes providing a substrate having a frontside and a backside, the frontside having at least one qubit formed thereon, the at least one qubit comprising capacitor pads; and removing substrate material from the backside of the substrate at an area opposite the at least one qubit to alter a capacitance around the at least one qubit so as to adjust a resonance frequency of the at least one qubit.