A process manufactures a PTC heating element (10) that includes at least one PTC component (20) and, on at least one side (50, 52) of the at least one PTC component (20), at least one carrier (14, 16) permanently connected to the PTC component (20). The process includes arranging solder material (46, 48) between the one side of the at least one PTC component (20), which side is to be permanently connected to the at least one carrier (14, 16), and the at least one carrier to be connected on this side of the at least one PTC component (20). The solder material (46, 48) is melted by induction soldering to connect the at least one PTC component (20) to the at least one carrier (14, 16).

A ceramic multi-layer component and a method for producing a ceramic multi-layer component are disclosed. In an embodiment a ceramic multi-layer component includes a stack with ceramic layers and electrode layers arranged between them, wherein the ceramic layers and the electrode layers are arranged above one another along a stacking direction, wherein at least one first electrode layer extends along a first main extension direction from a first end region to a second end region of the first electrode layer, and wherein the at least one first electrode layer has a current-carrying capacity that decreases along the first main extension direction.

The invention relates to a production method for an electrical resistance element (for example a shunt) with the following steps: -providing a resistance alloy in powder form, and -forming the resistance element from the powdered resistance material. The invention also relates to a correspondingly produced resistance element.

In a thermistor element, a thermistor body formed of a thermistor material, a conductive interlayer formed on the thermistor body, and an electrode layer formed on the conductive interlayer are provided, the conductive interlayer is formed along protrusions and recesses on a surface of the thermistor body, the conductive interlayer is a layer in which RuO.sub.2 grains in contact with each other are uniformly distributed and SiO.sub.2 interposes in gaps between the RuO.sub.2 grains, and the conductive interlayer is formed in a state of adhering to the thermistor body along the protrusions and the recesses on the surface of the thermistor body.

An electronic component includes external electrodes formed on an external surface of a body to be electrically connected to internal electrodes, and containing metal particles and glass, wherein the metal particles include particles having a polyhedral shape.

In a thermistor element, a thermistor body formed of a thermistor material, a conductive interlayer formed on the thermistor body, and an electrode layer formed on the conductive interlayer are provided, the conductive interlayer is formed along protrusions and recesses on a surface of the thermistor body, the conductive interlayer is a layer in which RuO.sub.2 grains in contact with each other are uniformly distributed and SiO.sub.2 interposes in gaps between the RuO.sub.2 grains, and the conductive interlayer is formed in a state of adhering to the thermistor body along the protrusions and the recesses on the surface of the thermistor body.

The chip resistor according to the present disclosure includes insulating substrate, a pair of upper face electrodes provided on both ends of one face of insulating substrate, and resistor provided on the one face of insulating substrate and connected between the pair of upper face electrodes. The chip resistor includes a pair of end-face electrodes provided on both end faces of insulating substrate to be electrically connected to the pair of upper face electrodes, and plating layer formed on portions of the pair of upper face electrodes and faces of the pair of end-face electrodes. Insulating film formed of a resin is provided on another face opposite to the one face of insulating substrate. Insulating film has a thickness of more than or equal to 30 m.

A sensor element and a method for producing a sensor element are disclosed. In an embodiment a sensor element includes a ceramic carrier having a top side and an underside, a respective NTC layer arranged on the top side and on the underside of the carrier and at least one electrode, wherein a resistance of the respective NTC layer depends on a thickness and/or geometry of the respective NTC layer.

A ceramic multi-layer component and a method for producing a ceramic multi-layer component are disclosed. In an embodiment a ceramic multi-layer component includes a stack with ceramic layers and electrode layers arranged between them, wherein the ceramic layers and the electrode layers are arranged above one another along a stacking direction, wherein at least one first electrode layer extends along a first main extension direction from a first end region to a second end region of the first electrode layer, and wherein the at least one first electrode layer has a current-carrying capacity that decreases along the first main extension direction.

A MOV device including a MOV chip, a first base metal electrode disposed on a first side of the MOV chip, and a second base metal electrode disposed on a second side of the MOV chip opposite the first side, each of the first base metal electrode and the second base metal electrode including a first base metal electrode layer disposed on a surface of the MOV chip and formed of one of silver, copper, and aluminum, the first base metal electrode layer having a thickness in a range of 2-200 micrometers, and a second base metal electrode layer disposed on a surface of the first base metal electrode layer and formed of one of silver, copper, and aluminum, the second base metal electrode layer having a thickness in a range of 2-200 micrometers.