A motor vehicle operating liquid tank, in particular for storing aqueous urea solution, with a tank shell surrounding a tank volume and with a tank opening extending through the tank shell, a planar heating device in the tank volume is provided with an electrical resistance heating track arranged sandwiched between two plastic films that oppose one another in a planar manner and encase the resistance heating track, the plastic films opposing one another in a planar manner and each have a layer of compatible, thermoplastic plastics at least on their surfaces facing one another which are connected to one another locally at least along a seam track surrounding the electrical resistance heating track, slot areas are provided inside this seam track in which plastic film sections lie opposite one another in an unconnected manner without the intermediate arrangement of a section of a resistance heating track between them.

A sensor element, a sensor arrangement, and a method for manufacturing a Sensor element are disclosed. In an embodiment, a sensor element includes a ceramic main body and at least one electrode arranged at the main body, wherein the electrode has at least one layer comprising nickel.

A MOV device including a MOV chip, a first base metal electrode disposed on a first side of the MOV chip, and a second base metal electrode disposed on a second side of the MOV chip opposite the first side, each of the first base metal electrode and the second base metal electrode including a first base metal electrode layer disposed on a surface of the MOV chip and formed of one of silver, copper, and aluminum, the first base metal electrode layer having a thickness in a range of 2-200 micrometers, and a second base metal electrode layer disposed on a surface of the first base metal electrode layer and formed of one of silver, copper, and aluminum, the second base metal electrode layer having a thickness in a range of 2-200 micrometers.

Provided are a thermistor which can have a satisfactory thermistor film using a metal substrate as well as a high humidity resistance and heat resistance; a method for producing the same; and a thermistor sensor. The thermistor according to the present invention includes a metal substrate 2, an insulating base film 3 formed on the metal substrate, and a thermistor film 4 formed on the insulating base film, wherein the insulating base film is formed so as to fill the irregularities on the surface of the metal substrate where the surface roughness of the insulating base film is lower than that of the metal substrate. In the method for producing this thermistor includes the steps of: applying polysilazane on the metal substrate; drying the polysilazane to form the insulating base film of SiO.sub.x containing nitrogen; and depositing the thermistor film on the insulating base film.

The chip resistor according to the present disclosure includes insulating substrate, a pair of upper face electrodes provided on both ends of one face of insulating substrate, and resistor provided on the one face of insulating substrate and connected between the pair of upper face electrodes. The chip resistor includes a pair of end-face electrodes provided on both end faces of insulating substrate to be electrically connected to the pair of upper face electrodes, and plating layer formed on portions of the pair of upper face electrodes and faces of the pair of end-face electrodes. Insulating film formed of a resin is provided on another face opposite to the one face of insulating substrate. Insulating film has a thickness of more than or equal to 30 m.

A sensor element and a method for producing a sensor element are disclosed. In an embodiment a sensor element for temperature measurement includes a ceramic carrier and at least one NTC layer printed on the carrier, wherein the NTC layer covers at least part of a surface of the carrier, and wherein the sensor element is designed for wireless contacting.

A chip resistor includes an insulating substrate made of alumina, a pair of electrodes disposed on an upper surface of the insulating substrate, a glass glaze layer made of glass disposed on the upper surface of the insulating substrate, and a resistive element disposed on the upper surface of the glass glaze layer. The resistive element is disposed between the pair of electrodes. The softening point of the glass of the glass glaze layer ranges from 580 C. to 760 C. This chip resistor prevents the resistive element from being peeled off.

Provided are: a temperature sensor capable of ensuring reliability and improving thermal responsiveness; and a device equipped with such a temperature sensor. The present invention is provided with: a surface-mounted heat sensitive element (10) having at least a pair of electrode parts (12a), (12b); lead parts (22a), (22b) that are electrically connected to the pair of electrode parts (12a), (12b) by welding; a holder (21) that holds and fixes the lead parts (22a), (22b); and an insulation coating part (23) that insulates at least a portion of the lead parts (22a), (22b) and the heat sensitive element (10). The lead parts (22a), (22b) are tabular metal plates and are formed of a metallic material having a melting point of not more than 1300 C.

A MOV device including a MOV chip, a first base metal electrode disposed on a first side of the MOV chip, and a second base metal electrode disposed on a second side of the MOV chip opposite the first side, each of the first base metal electrode and the second base metal electrode including a first base metal electrode layer disposed on a surface of the MOV chip and formed of one of silver, copper, and aluminum, the first base metal electrode layer having a thickness in a range of 2-200 micrometers, and a second base metal electrode layer disposed on a surface of the first base metal electrode layer and formed of one of silver, copper, and aluminum, the second base metal electrode layer having a thickness in a range of 2-200 micrometers.

A multilayer ceramic capacitor includes dielectric layers and internal electrode layers provided on the dielectric layers. The dielectric layers each include a perovskite compound that includes Ca and Zr, and optionally Sr and Ti. Mn is disposed at an interface between one of the dielectric layers and one of the internal electrode layers, and a Mn/Zr molar ratio at the interface is not less than about 0.117.