The present invention provides a capacitive voltage transformer, including: a capacitive voltage-dividing component and an electromagnetic unit. The capacitive voltage-dividing component comprises: one or more levels of stacks, and each stack is a coupling capacitor. The coupling capacitor includes: an upper cover plate, a lower cover plate, an insulating sleeve, a capacitor core, squirrel cage electrodes, volume matching devices, a high voltage lead, and a low voltage lead. The lowermost coupling capacitor is provided with a medium voltage lead and a lead terminal. The low voltage lead of the lowermost coupling capacitor is led out through a low-voltage leading-out tube arranged in the lead terminal, and the medium voltage lead of the lowermost coupling capacitor is led out through a medium-voltage leading-out post arranged in the lead terminal. The medium-voltage leading-out post passes through and out of the low-voltage leading-out tube and is arranged coaxially with the low-voltage leading-out tube.

The present invention provides a capacitive voltage transformer, including: a capacitive voltage-dividing component and an electromagnetic unit. The capacitive voltage-dividing component comprises: one or more levels of stacks, and each stack is a coupling capacitor. The coupling capacitor includes: an upper cover plate, a lower cover plate, an insulating sleeve, a capacitor core, squirrel cage electrodes, volume matching devices, a high voltage lead, and a low voltage lead. The lowermost coupling capacitor is provided with a medium voltage lead and a lead terminal. The low voltage lead of the lowermost coupling capacitor is led out through a low-voltage leading-out tube arranged in the lead terminal, and the medium voltage lead of the lowermost coupling capacitor is led out through a medium-voltage leading-out post arranged in the lead terminal. The medium-voltage leading-out post passes through and out of the low-voltage leading-out tube and is arranged coaxially with the low-voltage leading-out tube.

A capacitive network for use in a voltage sensor includes a first conductor shaped to form a boundary that separates a first interior space and a first exterior space; a second conductor shaped to form a boundary that encircles a second interior space and separates the second interior space from a second exterior space; a third conductor disposed in the second interior space and having a line of sight to the first conductor through an opening in the second conductor; and an external insulator formed around the first conductor and the second conductor in the first exterior space and the second exterior space. A first capacitance is formed between the first conductor and the third conductor, a second capacitance is formed between the second conductor and the third conductor, and conductive material that may collect on the external insulator has negligible effect on the first capacitance and the second capacitance.

A capacitive network for use in a voltage sensor includes a first conductor shaped to form a boundary that separates a first interior space and a first exterior space; a second conductor shaped to form a boundary that encircles a second interior space and separates the second interior space from a second exterior space; a third conductor disposed in the second interior space and having a line of sight to the first conductor through an opening in the second conductor; and an external insulator formed around the first conductor and the second conductor in the first exterior space and the second exterior space. A first capacitance is formed between the first conductor and the third conductor, a second capacitance is formed between the second conductor and the third conductor, and conductive material that may collect on the external insulator has negligible effect on the first capacitance and the second capacitance.

Embodiments of the present disclosure provide a semiconductor structure and a manufacturing method thereof. The manufacturing method includes: providing a base; forming a bottom electrode layer on the base, wherein a crystal structure of the bottom electrode layer includes a tetragonal crystal system; forming a first dielectric layer on a surface of the bottom electrode layer by using the bottom electrode layer as a seed layer, wherein a crystal structure of the first dielectric layer includes a tetragonal crystal system; and forming a first current blocking layer on a surface of the first dielectric layer.

A capacitor includes: at least one multi-wing structure including N axes and M wings, where the N axes extend along a first direction, and the M wings are a convex structure formed by extending from side walls of the N axes toward a direction perpendicular to the first direction, a first wing of the M wings and the N axes are formed of a first conductive material, and other wings are formed of a second conductive material; a conductive structure cladding the multi-wing structure; a dielectric layer disposed between the multi-wing structure and the conductive structure to isolate the multi-wing structure from the conductive structure; a first external electrode electrically connected to some or all multi-wing structures; and a second external electrode electrically connected to the conductive structure.

A multilayer ceramic electronic component includes a ceramic body comprising dielectric layers and first and second internal electrodes laminatedly disposed in a third direction with respective dielectric layers interposed therebetween, and first electrode and second external electrodes disposed on both surfaces of the ceramic body in the first direction and electrically connected to the first and second internal electrodes. When an absolute value of a horizontal angle in the second direction of the first internal electrode with respect to the first surface of the ceramic body is referred to a first angle of the internal electrode, a total sum of the first angles is less than 10°.

A multilayer ceramic electronic component includes a ceramic body comprising dielectric layers and first and second internal electrodes laminatedly disposed in a third direction with respective dielectric layers interposed therebetween, and first electrode and second external electrodes disposed on both surfaces of the ceramic body in the first direction and electrically connected to the first and second internal electrodes. When an absolute value of a horizontal angle in the second direction of the first internal electrode with respect to the first surface of the ceramic body is referred to a first angle of the internal electrode, a total sum of the first angles is less than 10°.

A thin-film capacitor includes an insulating base member, and a capacitance portion that is laminated on the insulating base member has a plurality of internal electrode layers which are laminated on the insulating base member and are provided in a lamination direction and dielectric layers which are sandwiched between the internal electrode layers. A relative dielectric constant of the dielectric layers is 100 or higher.

A thin-film capacitor includes an insulating base member, and a capacitance portion that is laminated on the insulating base member has a plurality of internal electrode layers which are laminated on the insulating base member and are provided in a lamination direction and dielectric layers which are sandwiched between the internal electrode layers. A relative dielectric constant of the dielectric layers is 100 or higher.