A capacitor structure and a power convertor are provided by the present disclosure. The capacitor structure includes a housing and at least one core arranged inside the housing, and two electrodes of the capacitor structure are respectively led out from two ends of the housing. Thus, the pole piece required in a case that electrodes are led from the same end of the housing is omitted, thereby saving material cost. Besides, the housing and the core are respectively hollow structures, and the internal heat of the capacitor structure can be ventilated and dissipated through the corresponding hollow part, thereby improving the heat dissipation performance of the capacitor structure. In addition, by arranging the fin heat dissipation teeth on the housing, the heat dissipation area can be increased to further improve the heat dissipation efficiency.

A miniature electrochemical cell having a volume of less than 0.5 cc is described. The cell casing comprises an open-ended ceramic container having a via hole providing an electrically conductive pathway extending through the container. A metal lid closes the open-end of the container. An electrode assembly housed inside the casing comprises an anode current collector deposited on an inner surface of the ceramic container in contact with the electrically conductive pathway in the via hole. An anode active material contacts the current collector and a cathode active material contacts the metal lid. A separator is disposed between the anode and cathode active materials. That way, the electrically conductive pathway serves as a negative terminal, and the lid, electrically isolated from the conductive pathway by the ceramic container, serves as a positive terminal. The negative and positive terminals are configured for electrical connection to a load.

A miniature electrochemical cell having a volume of less than 0.5 cc is described. The cell casing comprises an open-ended ceramic container having a via hole providing an electrically conductive pathway extending through the container. A metal lid closes the open-end of the container. An electrode assembly housed inside the casing comprises an anode current collector deposited on an inner surface of the ceramic container in contact with the electrically conductive pathway in the via hole. An anode active material contacts the current collector and a cathode active material contacts the metal lid. A separator is disposed between the anode and cathode active materials. That way, the electrically conductive pathway serves as a negative terminal, and the lid, electrically isolated from the conductive pathway by the ceramic container, serves as a positive terminal. The negative and positive terminals are configured for electrical connection to a load.

A semiconductor-based capacitor can include a substrate including a semiconductor material, an oxide layer formed on a surface of the substrate, a conductive layer formed over at least a portion of the oxide layer, a plurality of distinct coplanar upper terminals, and at least one lower terminal formed. Each of the upper terminals and the at least one lower terminal can be exposed along the top and bottom surfaces of the substrate, respectively, for embedding the capacitor in a substrate such as a circuit board. The semiconductor-based capacitor can be sufficiently miniaturized to be embeddable within a circuit board while providing superior capacitance values. For example, a ratio of the length to the width of the substrate can be in a range from about 3:1 to about 1:3 and an area of the substrate can be less than about 3 mm.sup.2.

New types of circuit elements for integrated circuits include structures wherein a thickness dimension is much greater than a width dimension and is more closely spaced than the width dimension in order to attain a tight coupling condition. The structure is suitable to form inductors, capacitors, transmission lines and low impedance power distribution networks in integrated circuits. The width dimension is on the same order of magnitude as skin depth. Embodiments include a spiral winding disposed in a silicon substrate formed of a deep, narrow, conductor-covered spiral ridge separated by a narrow spiral trench. Other embodiments include a wide, thin conductor formed in or on a flexible insulative ribbon and wound with turns adjacent one another, or a conductor in or on a flexible insulative sheet folded into layers with windings adjacent one another Further, a method of manufacture includes directional etching of the deep, narrow spiral trench to form a winding in silicon.

New types of circuit elements for integrated circuits include structures wherein a thickness dimension is much greater than a width dimension and is more closely spaced than the width dimension in order to attain a tight coupling condition. The structure is suitable to form inductors, capacitors, transmission lines and low impedance power distribution networks in integrated circuits. The width dimension is on the same order of magnitude as skin depth. Embodiments include a spiral winding disposed in a silicon substrate formed of a deep, narrow, conductor-covered spiral ridge separated by a narrow spiral trench. Other embodiments include a wide, thin conductor formed in or on a flexible insulative ribbon and wound with turns adjacent one another, or a conductor in or on a flexible insulative sheet folded into layers with windings adjacent one another Further, a method of manufacture includes directional etching of the deep, narrow spiral trench to form a winding in silicon.

A capacitor that includes an insulating substrate; a capacitance forming portion including a metal porous body, a dielectric film, and a conductive film; and a sealing portion that seals the capacitance forming portion. The capacitance forming portion is on a first main surface of the insulating substrate. A first external connection line including a first via conductor penetrating the insulating substrate from the first main surface side toward the second main surface side is connected to the metal porous body; and a second external connection line including a second via conductor penetrating the insulating substrate from the first main surface side toward the second main surface side is connected to the conductive film. When viewed in a normal direction of the first main surface, the first via conductor and the second via conductor are both in a region where the capacitance forming portion is disposed.

A capacitor that includes an insulating substrate; a capacitance forming portion including a metal porous body, a dielectric film, and a conductive film; and a sealing portion that seals the capacitance forming portion. The capacitance forming portion is on a first main surface of the insulating substrate. A first external connection line including a first via conductor penetrating the insulating substrate from the first main surface side toward the second main surface side is connected to the metal porous body; and a second external connection line including a second via conductor penetrating the insulating substrate from the first main surface side toward the second main surface side is connected to the conductive film. When viewed in a normal direction of the first main surface, the first via conductor and the second via conductor are both in a region where the capacitance forming portion is disposed.

A metal-oxide-semiconductor (MOS) capacitor can include a substrate including a semiconductor material, an oxide layer formed on a surface of the substrate, a conductive layer formed over at least a portion of the oxide layer, a first terminal connected with the surface of the substrate, and a second terminal connected with the conductive layer. The oxide layer can be connected in series between the substrate and the conductive layer to form a capacitor between the first terminal and the second terminal. Each of the first terminal and the second terminal can be exposed along the surface of the substrate for surface mounting the capacitor. The MOS capacitor can exhibit excellent high frequency performance. For example, an insertion loss of the MOS capacitor can be greater than about −0.75 dB for frequencies ranging from about 5 GHz to about 40 GHz.

A capacitor provides a plurality of selectable capacitance values, by selective connection of six capacitor sections of a capacitive element each having a capacitance value. The capacitor sections are provided in a plurality of wound cylindrical capacitive elements. Two vertically stacked wound cylindrical capacitance elements may each provide three capacitor sections. There may be six separately wound cylindrical capacitive elements each providing a capacitor section. The capacitor sections have a common element terminal.