A semiconductor-based capacitor can include a substrate including a semiconductor material, an oxide layer formed over the substrate, a conductive layer formed over at least a portion of the oxide layer, a plurality of distinct coplanar upper terminals, and a lower terminal. The upper terminals and the lower terminal can be exposed along the top and bottom surfaces of the substrate, respectively, for embedding the capacitor in a substrate such as a circuit board. The semiconductor-based capacitor can be sufficiently miniaturized to be embeddable within a circuit board while providing superior capacitance values without compromising the integrity of the capacitor. For example, each of the upper terminals can have a maximum width and a thickness normal to the maximum width, and a ratio of the width to the thickness can be greater than about 80:1 to prevent physical damage to the capacitor from warping or cracking.

A vibration device includes a semiconductor substrate having a first surface and a second surface in an obverse-reverse relationship, a vibration element disposed on the first surface, a lid bonded to the first surface, an integrated circuit disposed on the first surface, a terminal disposed on the second surface, a through electrode which penetrates the semiconductor substrate, and is configured to electrically couple the terminal and the integrated circuit to each other, and a first capacitor which is provided with a first recess provided to the semiconductor substrate and opening in the first surface, an insulating film disposed on an inside surface of the first recess, and an electrically-conductive material filling the first recess, and has a first capacitance between the electrically-conductive material and the semiconductor substrate, wherein the electrically-conductive material does not have contact with the terminal at the second surface side.

The present disclosure provides a chip part. The chip part includes a substrate, a capacitor portion and a substrate body portion. The capacitor portion includes a plurality of wall portions having a lengthwise direction and separated from each other by a trench formed on a first main surface of the substrate. The substrate body portion is formed around the capacitor portion using a portion of the substrate. The plurality of wall portions are formed of a plurality of pillar units. The capacitor portion, in the plan view, includes a first capacitor portion and a second capacitor portion. The first capacitor portion includes the plurality of wall portions having the lengthwise direction as a first lengthwise direction. The second capacitor portion includes the plurality of wall portions having the lengthwise direction as a second lengthwise direction orthogonal to the first lengthwise direction.

An electronic device and a method for manufacturing an electronic device. The electronic device includes: a board equipped with a pair of differential transmission lines, each line of the pair having an opening extending between two line terminals; and a capacitor module that includes: a base; and two 3D capacitors supported by the base, each 3D capacitor comprising two capacitor terminals respectively connected to the two line terminals of one line of the pair of transmission lines.

The present invention is directed to a multilayer capacitor and a circuit board containing the multilayer capacitor. The capacitor includes a main body containing a first set of alternating dielectric layers and internal electrode layers and a second set of alternating dielectric layers and internal electrode layers. Each set contains a first internal electrode layer and a second internal electrode layer wherein each layer includes a top edge, a bottom edge opposite the top edge, and two side edges that define a main body of the layer. Each layer contains at least one lead tab extending from the top edge of the main body of the layer and at least one lead tab extending from the bottom edge of the main body of the layer wherein the lead tabs are offset from the side edges of the main body of the layer. In addition, external terminals are electrically connected to the internal electrode layers wherein the external terminals are formed on a top surface of the capacitor and a bottom surface of the capacitor opposing the top surface of the capacitor.

The present invention is directed to a multilayer capacitor and a circuit board containing the multilayer capacitor. The capacitor includes a main body containing a first set of alternating dielectric layers and internal electrode layers and a second set of alternating dielectric layers and internal electrode layers. Each set contains a first internal electrode layer and a second internal electrode layer wherein each layer includes a top edge, a bottom edge opposite the top edge, and two side edges that define a main body of the layer. Each layer contains at least one lead tab extending from the top edge of the main body of the layer and at least one lead tab extending from the bottom edge of the main body of the layer wherein the lead tabs are offset from the side edges of the main body of the layer. In addition, external terminals are electrically connected to the internal electrode layers wherein the external terminals are formed on a top surface of the capacitor and a bottom surface of the capacitor opposing the top surface of the capacitor.

A multilayer ceramic electronic component includes a multilayer body including two major surfaces opposite to each other in a layer stacking direction, two side surfaces opposite to each other in a widthwise direction orthogonal or substantially orthogonal to the layer stacking direction, and two end surfaces opposite to each other in a lengthwise direction orthogonal or substantially orthogonal to the layer stacking direction and the widthwise direction, and external electrodes provided on the two end surfaces. A method for manufacturing the multilayer ceramic capacitor component includes preparing a plurality of multilayer bodies, stacking the plurality of multilayer bodies via a binder, rotating the plurality of multilayer bodies by about 90° with the lengthwise direction defining and functioning as an axis of rotation, and providing a side gap portion; and removing the binder from the multilayer body provided with the side gap portion.

A multilayer ceramic electronic component includes a multilayer body including two major surfaces opposite to each other in a layer stacking direction, two side surfaces opposite to each other in a widthwise direction orthogonal or substantially orthogonal to the layer stacking direction, and two end surfaces opposite to each other in a lengthwise direction orthogonal or substantially orthogonal to the layer stacking direction and the widthwise direction, and external electrodes provided on the two end surfaces. A method for manufacturing the multilayer ceramic capacitor component includes preparing a plurality of multilayer bodies, stacking the plurality of multilayer bodies via a binder, rotating the plurality of multilayer bodies by about 90° with the lengthwise direction defining and functioning as an axis of rotation, and providing a side gap portion; and removing the binder from the multilayer body provided with the side gap portion.

A semiconductor device includes a semiconductor substrate having first and second main surfaces that oppose each other in a thickness direction, and a circuit layer disposed on the first main surface. The circuit layer includes a first electrode layer on a side of the semiconductor substrate, a second electrode layer that faces the first electrode layer, a dielectric layer disposed between the electrode layers, and a first outer electrode electrically connected to the first electrode layer through an opening in the dielectric layer. An end portion of the dielectric layer on a side of the first region is in contact with the first electrode layer, and in the dielectric layer, a size of the end portion in the thickness direction is smaller than a size of an inter-electrode portion between the first and second electrode layers in the thickness direction.

A semiconductor device includes a semiconductor substrate having first and second main surfaces that oppose each other in a thickness direction, and a circuit layer disposed on the first main surface. The circuit layer includes a first electrode layer on a side of the semiconductor substrate, a second electrode layer that faces the first electrode layer, a dielectric layer disposed between the electrode layers, and a first outer electrode electrically connected to the first electrode layer through an opening in the dielectric layer. An end portion of the dielectric layer on a side of the first region is in contact with the first electrode layer, and in the dielectric layer, a size of the end portion in the thickness direction is smaller than a size of an inter-electrode portion between the first and second electrode layers in the thickness direction.