Patent classifications
H01G4/252
SEMICONDUCTOR DEVICE
A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface; a dielectric film on the first main surface, the dielectric film having an electrode layer disposing portion and a protective layer covering portion, and a thickness of the protective layer covering portion in a first outer peripheral end of the dielectric film is smaller than a thickness of the electrode layer disposing portion; a first electrode layer on the electrode layer disposing portion; a first protective layer covering a second outer peripheral end of the first electrode layer and at least a part of the protective layer covering portion; and a second protective layer covering the first protective layer, wherein the first protective layer has a relative permittivity lower than that of the second protective layer, and the second protective layer has moisture resistance higher than that of the first protective layer.
Multilayer ceramic capacitor
A multilayer ceramic capacitor includes a body including a dielectric layer and first and second internal electrodes disposed with the dielectric layer interposed therebetween in a stacking direction, and including a first surface and a second surface opposing each other in the stacking direction, a first through electrode penetrating the body and connected to the first internal electrode; a second through electrode penetrating the body and connected to the second internal electrode, first and second external electrodes disposed on the first surface and the second surface, respectively, and connected to the first through electrode, third and fourth external electrodes spaced apart from the first and second external electrodes and connected to the second through electrode, and an identifier disposed on the first surface or the second surface of the body, and the first and second through electrodes protrude from the first surface of the body.
THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE SAME
To provide a thin film capacitor having high adhesion performance with respect to a multilayer substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. A height of the first electrode layer is lower than a height of the second electrode layer. This enhances adhesion performance when the thin film capacitor is embedded in a multilayer substrate and improves ESR characteristics.
Electronic component
An electronic component includes an element body, an external electrode, and a resin film having electrical insulation properties. The element body includes a principal surface and a side surface adjacent to the principal surface. The external electrode includes a first electrode portion disposed on the principal surface and a second electrode portion disposed on the side surface. The resin film is disposed on the principal surface and is in contact with the principal surface. Each of the first electrode portion and the second electrode portion includes a conductive resin layer disposed on the element body. A conductive resin layer included in the first electrode portion is disposed on the resin film and is in contact with the resin film.
Electronic component
An electronic component includes an element body, an external electrode, and a resin film having electrical insulation properties. The element body includes a principal surface and a side surface adjacent to the principal surface. The external electrode includes a first electrode portion disposed on the principal surface and a second electrode portion disposed on the side surface. The resin film is disposed on the principal surface and is in contact with the principal surface. Each of the first electrode portion and the second electrode portion includes a conductive resin layer disposed on the element body. A conductive resin layer included in the first electrode portion is disposed on the resin film and is in contact with the resin film.
Multilayer ceramic capacitor
A multilayer ceramic capacitor has a body including first and second internal electrodes laminated with a dielectric layer interposed therebetween, and having fifth and sixth surfaces opposing each other, third and fourth surfaces opposing each other, and first and second surfaces opposing each other. A first through-electrode penetrates through the body to be connected to the first internal electrode, and a second through-electrode penetrates through the body to be connected to the second internal electrode. First and second external electrodes are disposed on the first and second surfaces, respectively, and third and fourth external electrodes are disposed on the first and second surfaces, respectively, to be spaced apart from the first and second external electrodes. Each of the first to fourth external electrodes is a respective sintered electrode including nickel.
Multilayer ceramic capacitor
A multilayer ceramic capacitor includes a body including first and second internal electrodes laminated with a respective dielectric layer interposed therebetween, and having fifth and sixth surfaces opposing each other, third and fourth surfaces opposing each other, and first and second surfaces opposing each other. A first through-electrode penetrates through the body to be connected to the first internal electrode, a second through-electrode penetrates through the body to be connected to the second internal electrode, first and second external electrodes are disposed on the first and second surfaces, respectively, and third and fourth external electrodes are disposed on the first and second surfaces, respectively, to be spaced apart from the first and second external electrodes. Each of the first and second through-electrodes has a taper.
Multilayer ceramic capacitor
A multilayer ceramic capacitor includes a body including first and second internal electrodes laminated with a respective dielectric layer interposed therebetween, and having fifth and sixth surfaces opposing each other, third and fourth surfaces opposing each other, and first and second surfaces opposing each other. A first through-electrode penetrates through the body to be connected to the first internal electrode, a second through-electrode penetrates through the body to be connected to the second internal electrode, first and second external electrodes are disposed on the first and second surfaces, respectively, and third and fourth external electrodes are disposed on the first and second surfaces, respectively, to be spaced apart from the first and second external electrodes. Each of the first and second through-electrodes has a taper.
Thermal paths for glass substrates
Examples herein include thermally conductive pathways for glass substrates such as used by passive on glass devices that may be used to enhance the thermal conductivity of an integrated POG device. By using a thermally conductive material for passivation of the device pathways during manufacturing, the device pathways may be able to conduct heat away from the device. For example, by using a selected poly (p-phenylene benzobisoxazole) (PBO) based material (e.g., poly-p-phenylene-2, 6-benzobisoxazole) instead of conventional polyimide (PI) materials during a Cu pattern passivation process, the overall thermal performance of the device, may be enhanced.
Thermal paths for glass substrates
Examples herein include thermally conductive pathways for glass substrates such as used by passive on glass devices that may be used to enhance the thermal conductivity of an integrated POG device. By using a thermally conductive material for passivation of the device pathways during manufacturing, the device pathways may be able to conduct heat away from the device. For example, by using a selected poly (p-phenylene benzobisoxazole) (PBO) based material (e.g., poly-p-phenylene-2, 6-benzobisoxazole) instead of conventional polyimide (PI) materials during a Cu pattern passivation process, the overall thermal performance of the device, may be enhanced.