A manufacturing method for an electronic component includes: a step of forming an insulating layer on an outer electrode body so as to cover the outer electrode body, the outer electrode body being formed on a chip element which forms the electronic component; and a step of removing the insulating layer in a predetermined region of the outer electrode body by applying laser light to the insulating layer in the predetermined region so as to expose the predetermined region. The insulating layer has a higher absorption coefficient for the laser light than a material forming a surface of the outer electrode body.

A manufacturing method for an electronic component includes: a step of forming an insulating layer on an outer electrode body so as to cover the outer electrode body, the outer electrode body being formed on a chip element which forms the electronic component; and a step of removing the insulating layer in a predetermined region of the outer electrode body by applying laser light to the insulating layer in the predetermined region so as to expose the predetermined region. The insulating layer has a higher absorption coefficient for the laser light than a material forming a surface of the outer electrode body.

To provide a thin film capacitor in which peeling-off of an electrode layer is less likely to occur. A thin film capacitor includes a metal foil having a roughened upper surface, a dielectric film covering the upper surface of the metal foil and having an opening for partly exposing the metal foil therethrough, a first electrode layer contacting the metal foil through the opening and further contacting the dielectric film, and a second electrode layer contacting the dielectric film without contacting the metal foil. With this configuration, both the first and second electrode layers can be disposed on the upper surface of the metal foil. In addition, the first electrode layer contacts not only the metal foil but also the dielectric film, making peeling of the first electrode layer less likely to occur.

A ceramic electronic device includes a multilayer chip including a multilayer structure, a first cover layer and a second cover layer and having a parallelepiped shape, the multilayer structure having a structure in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked and are alternately exposed to a first end face and a second end face of the multilayer chip, the first end face being opposite to the second end face, the first cover layer being provided on an upper face of the multilayer structure in a stacking direction, the second cover layer being provided on a lower face of the multilayer structure, a first external electrode formed on the first end face, and a second external electrode formed on the second end face. In this structure, a relationship of 0.20≤R1/√{square root over ( )}(P1.sup.2−C1.sup.2)≤0.80 is satisfied.

A ceramic electronic device includes a multilayer chip including a multilayer structure, a first cover layer and a second cover layer and having a parallelepiped shape, the multilayer structure having a structure in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked and are alternately exposed to a first end face and a second end face of the multilayer chip, the first end face being opposite to the second end face, the first cover layer being provided on an upper face of the multilayer structure in a stacking direction, the second cover layer being provided on a lower face of the multilayer structure, a first external electrode formed on the first end face, and a second external electrode formed on the second end face. In this structure, a relationship of 0.20≤R1/√{square root over ( )}(P1.sup.2−C1.sup.2)≤0.80 is satisfied.

A multilayer ceramic capacitor includes a body including a dielectric layer and first and second internal electrodes disposed with the dielectric layer interposed therebetween in a stacking direction, and including a first surface and a second surface opposing each other in the stacking direction, a first through electrode penetrating the body and connected to the first internal electrode; a second through electrode penetrating the body and connected to the second internal electrode, first and second external electrodes disposed on the first surface and the second surface, respectively, and connected to the first through electrode, third and fourth external electrodes spaced apart from the first and second external electrodes and connected to the second through electrode, and an identifier disposed on the first surface or the second surface of the body, and the first and second through electrodes protrude from the first surface of the body.

A multilayer ceramic capacitor includes a body including a dielectric layer and first and second internal electrodes disposed with the dielectric layer interposed therebetween and disposed in point-symmetry with each other; first and second connection electrodes penetrating the body in a direction perpendicular to the dielectric layer and connected to the first internal electrode; third and fourth connection electrodes penetrating the body in a direction perpendicular to the dielectric layer and connected to the second internal electrode; first and second external electrodes disposed on both surfaces of the body and connected to the first and second connection electrodes; and third and fourth external electrodes spaced apart from the first and second external electrodes and connected to the third and fourth connection electrodes, and the first and second internal electrodes include a region in which an electrode is not disposed.

To provide a thin film capacitor having high adhesion with respect to a circuit substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. An angle θa formed by the other main surface of the metal foil and a side surface thereof is more than 20° and less than 80°. The side surface is thus tapered at an angle of more than 20° and less than 80°, so that it is possible to suppress warpage and to enhance adhesion with respect to a multilayer substrate when the thin film capacitor is embedded in the multilayer substrate.

A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; a second electrode layer contacting the dielectric film without contacting the metal foil; and an insulating member separating the first and second electrode layers. The insulating member has a tapered shape in cross section. With the above configuration, both the first and second electrode layers can be disposed on the upper surface of the metal foil. In addition, since the insulating member has a tapered shape in cross section, adhesion performance of the insulating member can be enhanced, thus making it possible to prevent short-circuit between the first and second electrode layers.

To provide a thin film capacitor in which warpage is less likely to occur. A thin film capacitor includes: a metal foil having roughened upper and lower surfaces; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a dielectric film covering the lower surface of the metal foil and made of a dielectric material having a thermal expansion coefficient smaller than that of the metal foil; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the first dielectric film without contacting the metal foil. The lower surface of the metal foil is thus covered with the dielectric film having a small thermal expansion coefficient, thereby making it possible to prevent the occurrence of warpage.