A photovoltaic device, comprises (1) a first conductive layer, (2) an optional blocking layer, on the first conductive layer, (3) a semiconductor layer, on the first conductive layer, (4) n light-harvesting material, on the semiconductor layer, (5) a hole transport material, on the light-harvesting material, and (6) a second conductive layer, on the hole transport material. The light harvesting material comprises, a pervoskite absorber, and the second conductive layer comprises nickel. The semiconductor layer tray comprise TiO.sub.2 nanowires. The light-harvesting material may comprise a pervoskite absorber containing a psuedohalogen.

A solar cell module (100) including: a substrate (1); and a plurality of photoelectric conversion elements disposed on the substrate (1), each of the plurality of photoelectric conversion elements including a first electrode (2a, 2b), an electron transport layer (3, 4), a perovskite layer (5), a hole transport layer (6), and a second electrode (7a, 7b), wherein, within at least two of the photoelectric conversion elements adjacent to each other, the hole transport layers (6) are continuous with each other, and the first electrodes (2a, 2b), the electron transport layers (3, 4), and the perovskite layers (5) are separated by the hole transport layer (6) within the at least two of the photoelectric conversion elements adjacent to each other.

Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes. The active layer may have perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.

A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and a semiconductor layer located between the first electrode and the photoelectric conversion layer, in which at least one selected from the group consisting of the first electrode and the second electrode is translucent, and the semiconductor layer contains a compound containing Na, Zn, and O.

The present invention relates to a photovoltaic device (10) comprising: a first conducting layer (16), a second conducting layer electrically insulated from the first conducting layer, a porous substrate (20) made of an insulating material arranged between the first and second conducting layers, a light absorbing layer (1) comprising a plurality of grains (2) of a doped semiconducting material disposed on the first conducting layer (16) so that the grains are in electrical and physical contact with the first conducting layer, and a charge conductor (3) made of a charge conducting material partly covering the grains and arranged to penetrate through the first conducting layer (16) and the porous substrate such that a plurality of continuous paths (22) of charge conducting material is formed from the surface of the grains (2) to the second conducting layer (18), wherein the first conducting layer (16) comprises a conducting material, an oxide layer (28) formed on the surface of conducting material, and an insulating coating (29) made of an insulating material deposited on the oxide layer (28) so that the oxide layer and the insulating coating together electrically insulate said paths (22) from the conducting material of the first conducting layer (16).

The present invention relates to a boron-dipyrromethene (BODIPY)-based copolymer, a method for preparing the copolymer, a solar cell including the copolymer, and a method for manufacturing the solar cell. By applying the copolymer of the present invention to a hole transporting layer, a solar cell having improved device characteristics such as charge mobility and power conversion efficiency and allowing those characteristics to be maintained for a long time may be provided.

A photovoltaic device (10) is provided that comprises serially arranged photovoltaic device cells (10A, 10B). Each cell having a transparent electrode layer region electrical conductors (121A, . . . , 124A) forming an electric contact with the transparent electrode layer region, a photo-voltaic stack portion (14A, 14B) that extends over the transparent electrode region (11A, 11B) and over an insulated portion of the electrical conductors, a further electrode region (15A, 5B) that extends over the photovoltaic stack portion (14A,14B). A further electrode region (15A) of a photovoltaic device cell (10A) extends over electric contacts formed by exposed ends (12B1) of the electrical conductors of a subsequent photovoltaic device cell (10B).

A flexible photovoltaic device is provided. The flexible photovoltaic device includes a flexible inorganic halide perovskite. The flexible inorganic halide perovskite is free of organic components, has a thickness of greater than or equal to about 1 μm to less than or equal to about 1 nm, and has an average grain size of less than or equal to about 500 nm.

The present disclosure may provide semiconductor perovskite layers and method of making thereof. In some cases, the perovskite layer may comprise a composition of MA.sub.n1FA.sub.n2Cs.sub.n3PbX.sub.3. MA may be methylammonium, FA may be formamidinium, n1, n2, and n3 may independently be greater than 0 and less than 1, and n1+n2+n3 may equal 1.

Provided is a semiconductor element that can generate power with high efficiency and has high durability. A multilayer junction photoelectric conversion element according to an embodiment includes: a first electrode; a first photoactive layer including a perovskite semiconductor; a first doped layer; a second photoactive layer including silicon; a second doped layer; a passivation layer; and a second electrode in this order. The interlayer interface existing between the first photoactive layer and the adjacent layer is a substantially smooth surface, and the multilayer junction photoelectric conversion element further includes a light scattering layer that penetrate a part of the passivation layer and electrically join the second doped layer and the second electrode. The element can be manufactured by a method including forming a bottom cell including a second active layer and then forming a first photoactive layer by coating.