Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (CPC) superconductor, or boson energy transmission system.

An electrode plate includes: a plurality of plate-like electrode members; and a joining part joining the electrode members to each other in a thickness direction. The joining part has a heat resistance to withstand a temperature of at least 150 C., melts at 700 C. or below.

An electron beam irradiation device (1) irradiates an electron beam from an electrode (12) that is connected to a tip of a conductive part (21) which projects inside a vacuum container (11), to the exterior of the vacuum container (11) via a metal foil (111) that constitutes a portion of a peripheral wall of the vacuum container (11). The electron beam irradiation device (1) includes a tubular insulator (22) that surrounds the periphery of the conductive part (21) in the vacuum container (11), and an amorphous carbon film (23) that covers the outer peripheral surface of the insulator (22).

An electrically conductive component is provided for a near-wafer environment of an ion implantation system, where the component has a carbon-based substrate having a microscopically textured surface overlying a macroscopically textured surface. The macroscopically textured surface is a mechanically, chemically, or otherwise roughened surface. The microscopically textured surface can be a converted surface formed by a chemical reaction forming a non-stoichiometric silicon and carbon surface. The one or more components can be a dose cup, exit aperture, and tunnel wall. The carbon-based substrate can be graphite. The microscopically textured surface can be a modified graphite surface. No defined interface layer exists between the microscopically textured surface and macroscopically textured surface. The carbon-based graphite is selected based on a final porosity and grain size of the graphite.

A system that utilizes a component that controls thermal gradients and the flow of thermal energy by variation in density is disclosed. Methods of fabricating the component are also disclosed. The component is manufactured using additive manufacturing. In this way, the density of different regions of the component can be customized as desired. For example, a lattice pattern may be created in the interior of a region of the component to reduce the amount of material used. This reduces weight and also decreases the thermal conduction of that region. By using low density regions and high density regions, the flow of thermal energy can be controlled to accommodate the design constraints.

A charged-particle beam apparatus is provided with a cathode to emit charged particle beams, an anode to propagate the charged particle beams emitted from the cathode in a sample surface direction, an aperture to propagate a charged particle beam passing through an opening at a predetermined position and of a predetermined shape, among the charged particle beams passing through the anode, in the sample surface direction, and a first electrode that is disposed between the anode and the aperture, and is set at a first electric potential of a polarity repelling a polarity of an ion generated due to collision of a charged particle beam.

In one embodiment, a multi charged particle beam writing apparatus includes an emitter emitting a charged particle beam, a shaping aperture array member having a plurality of first apertures, and allowing the charged particle beam to pass through the first apertures to form multiple beams, an X-ray shielding plate having a plurality of second apertures through each of which a corresponding one of the multiple beams that have passed through the first apertures passes, and a blanking aperture array member having a plurality of third apertures through each of which a corresponding one of the multiple beams that have passed through the first apertures and the second apertures passes, the blanking aperture array member including a blanker performing blanking deflection on the corresponding beam. The X-ray shielding plate blocks X-rays produced by irradiation of the shaping aperture array member with the charged particle beam.

According to one embodiment, a member for a semiconductor manufacturing device includes an alumite base material including a concavity, and a first layer formed on the alumite base material and including an yttrium compound. The first layer includes a first region, and a second region provided in the concavity and located between the first region and the alumite base material. An average particle diameter in the first region is shorter than an average particle diameter in the second region.

The purpose of the present invention is to provide a charged particle beam device that exhibits high performance due to the use of vanadium glass coatings, and to provide a method of manufacturing a component for a charged particle beam device. Specifically provided is a charged particle beam device using a vacuum component characterized by comprising a metal container, the interior space of which is evacuated to form a high vacuum, and coating layers formed on the surface on the interior space-side of the metal container, wherein the coating layers are vanadium-containing glass, which is to say an amorphous substance. Coating vanadium glass onto walls of a space where it is desirable to form a high vacuum, for example walls in the vicinity of an electron source, reduces gas discharge in the vicinity of the electron source, and the getter effect of the coating layer induces localized evacuation and enables the formation of an extremely high vacuum, even in spaces having a complex structure, without providing a large high-vacuum pump.

The present invention relates to a plasma-resistant glass, chamber interior parts for a semiconductor manufacturing process, and methods for manufacturing same, and specifically, to a plasma-resistant glass and a method for manufacturing same, wherein the content of components of the plasma-resistant glass can be controlled to reduce the thermal expansion coefficient of the glass and thereby prevent the glass from being damaged due to thermal shock when used at a high-temperature.