Provided is a particle beam apparatus capable of performing appropriate switching selectively between charged particle beam and neutral particle beam. A particle beam column (19) includes an ion source (41), a condenser lens (52), a charge exchange grid (55), and an objective lens (56). The ion source (41) generates ions. The condenser lens (52) changes focusing of the ion beam so that switching is performed between ion beam and neutral beam as particle beam with which a sample (S) is irradiated. The charge exchange grid (55) converts at least a part of ion beam into neutral particle beam through neutralization. The objective lens (56) is placed downstream of the charge exchange grid (55). The objective lens (56) reduces the ion beam toward the sample (S) when the sample (S) is irradiated with the neutral particle beam as the particle beam.

An apparatus may include global control module, the global control module including a digital master clock generator and a master waveform generator. The apparatus may also include a plurality of resonator control modules, coupled to the global control module. A given resonator control module of the plurality of resonator control modules may include a synchronization module, having a first input coupled to receive a resonator output voltage pickup signal from a local resonator, a second input coupled to receive a digital master clock signal from the digital master clock generator, and a first output coupled to send a delay signal to the master waveform generator.

Signal electrons with high energy that pass near an optical axis, for example, backscattered electrons or secondary electrons in a booster optical system, can be detected. Therefore, there is provided a charged particle beam device including: a charged particle beam source configured to generate a charged particle beam; an objective lens configured to focus the charged particle beam to a sample; and a first charged particle detecting element disposed between the charged particle beam source and the objective lens and configured to detect charged particles generated by an interaction between the charged particle beam and the sample, in which a detection surface of the first charged particle detecting element is disposed on a center axis of the objective lens.

A method of manufacturing a semiconductor device includes reducing a thickness of a semiconductor substrate and/or forming a doped region in the semiconductor substrate. The method further includes changing an ion acceleration energy of an ion beam while effecting a relative movement between the semiconductor substrate and the ion beam impinging on the semiconductor substrate.

A charged particle beam device capable of easily discriminating the energy of secondary charged particles is realized. The charged particle beam device includes a charged particle source, a sample stage on which a sample is placed, an objective lens that irradiates the sample with a charged particle beam from the charged particle source, a deflector that deflects secondary charged particles released by irradiating the sample with the charged particle beam, a detector that detects the secondary charged particles deflected by the deflector, a sample voltage control unit that applies a positive voltage to the sample or the sample stage, and a deflection intensity control unit that controls the intensity with which the deflector deflects the secondary charged particles.

Disclosed is a composite charged particle beam apparatus including: an ion supply unit supplying an ion beam; an acceleration voltage application unit applying an acceleration voltage to the ion beam supplied by the ion supply unit to accelerate the ion beam; a first focusing unit focusing the ion beam; a beam booster voltage application unit applying a beam booster voltage to the ion beam; a second focusing unit focusing the ion beam to irradiate a sample; an electron beam emission unit emitting an electron beam to irradiate the sample; and a controller setting a value of the beam booster voltage that the beam booster voltage application unit applies to the ion beam, based on a value of the acceleration voltage applied to the ion beam by the acceleration voltage application unit and of a set value predetermined according to a focal distance of the focused ion beam.

A scanning electron microscope objective lens system is disclosed, which includes: a magnetic lens, a deflection device, a deflection control electrode, specimen to be observed, and a detection device; in which, The opening of the pole piece of the magnetic lens faces to the specimen; the deflection device is located in the magnetic lens, which includes at least one sub-deflector; the deflection control electrode is located between the detection device and the specimen, and the deflection control electrode is used to change the direction of the primary electron beam and the signal electrons generating from the specimen; the detection device comprises the first sub-detector for detecting the back-scattered electrons and the second sub-detector for detecting the second electrons. A specimen detection method is also disclosed.

The present invention prevents breakage of a chip by using a simple configuration even when an extraction-electrode power source cannot apply voltage to an extraction electrode due to a malfunction, etc. This charged particle beam device is provided with: a charged particle source; an extraction electrode that extracts charged particles from the charged particle source; an extraction-electrode power source that applies voltage to the extraction electrode; an accelerating electrode for accelerating the charged particles; an accelerating power source that applies voltage to the accelerating electrode; and a diode and a resistor which are connected in series between a middle stage of the accelerating power source and the output side of the extraction-electrode power source.

A monitoring circuit that includes a pickup loop to monitor a voltage applied to a cavity of a linear accelerator is disclosed. The monitoring circuit is electrically isolated from the linear accelerator and is also electrically isolated from the controller that receives input from the circuit and controls the linear accelerator. In certain embodiments, the monitoring circuit also includes an energy harvester so as to capture energy without any physical connection to the controller. This may be achieved using light energy or electromagnetic energy, for example. In certain embodiments, the monitoring circuit includes an analog-to-digital converter to convert the signals received from the pickup loop to digital values. In other embodiments, the monitoring circuit passes analog voltages to the controller. The outputs from the monitoring circuit may include the amplitude and phase of the voltage being applied to the respective cavity.

An electron beam generator, a plasma processing apparatus, and a plasma processing method, the electron beam generator including a side insulator configured to surround the substrate support, the side insulator having an electron beam chamber therein; a first electrode embedded in the side insulator and adjacent to a first side wall of the electron beam chamber; a second electrode on a second side wall of the electron beam chamber; and a guide in an outlet of the electron beam chamber, the guide including slits through which electron beams generated in the electron beam chamber are transmittable into the process chamber.