The present application discloses an accelerator system for mineral component analysis and system and method for mineral component analysis. The accelerator system includes an electron gun for generating an electron beam; an accelerating tube for accelerating an electron beam emitted by the electron gun to a predetermined energy; a composite target for generating a radioactive ray on the composite target after receiving bombardment of the electron beam; and a shielding mechanism for shielding the radioactive ray.

An ion implanter. The ion implanter may include a beamline, the beamline defining an inner wall, surrounding a cavity, the cavity arranged to conduct an ion beam. The ion implanter may also include a low emission insert, disposed on the inner wall, and further comprising a .sup.12C layer, the .sup.12C layer having an outer surface, facing the cavity.

An ion implanter includes: a plurality of devices which are disposed along a beamline along which an ion beam is transported; a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure neutron rays which are generated at a plurality of locations of the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a measurement value in at least one of the plurality of neutron ray measuring instruments.

An ion implanter includes: a main body which includes a plurality of units which are disposed along a beamline along which an ion beam is transported, and a substrate transferring/processing unit which is disposed farthest downstream of the beamline, and has a neutron ray source in which a neutron ray is generated due to collision of a ultrahigh energy ion beam; an enclosure which at least partially encloses the main body; and a neutron ray scattering member which is disposed at a position where a neutron ray which is emitted from the neutron ray source is incident in a direction in which a distance from the neutron ray source to the enclosure is equal to or less than a predetermined value.

An object of the present disclosure is to provide a charged particle beam apparatus that can quickly find a correction condition for a new aberration that is generated in association with beam adjustment. In order to achieve the above object, the present disclosure proposes a charged particle beam apparatus configured to include an objective lens (7) configured to focus a beam emitted from a charged particle source and irradiate a specimen, a visual field movement deflector (5 and 6) configured to deflect an arrival position of the beam with respect to the specimen, and an aberration correction unit (3 and 4) disposed between the visual field movement deflector and the charged particle source, in which the aberration correction unit is configured to suppress a change in the arrival position of the beam irradiated under different beam irradiation conditions.

A low voltage scanning electron microscope is disclosed, which includes: an electron source configured to generate an electron beam; an electron beam accelerator configured to accelerate the electron beam; a compound objective lens configured to converge the electron beams accelerated by the electron beam accelerator; a deflection device arranged between the inner wall of the magnetic lens and the optical axis of the electron beam and configured to deflect the electron beam; a detection device comprising a first sub-detection device for receiving secondary and backscattered electrons from the specimen, a second sub-detection device for receiving backscattered electrons, and a control device for changing the trajectories of the secondary electrons and the backscattered electrons; an electrostatic lens comprising the second sub-detection device, a specimen stage, and a control electrode for reducing the moving speed of the electron beam and changing the moving directions of the secondary and the backscattered electrons.

Disclosed is a composite charged particle beam apparatus including: an ion supply unit supplying an ion beam; an acceleration voltage application unit applying an acceleration voltage to the ion beam supplied by the ion supply unit to accelerate the ion beam; a first focusing unit focusing the ion beam; a beam booster voltage application unit applying a beam booster voltage to the ion beam; a second focusing unit focusing the ion beam to irradiate a sample; an electron beam emission unit emitting an electron beam to irradiate the sample; and a controller setting a value of the beam booster voltage that the beam booster voltage application unit applies to the ion beam, based on a value of the acceleration voltage applied to the ion beam by the acceleration voltage application unit and of a set value predetermined according to a focal distance of the focused ion beam.

A low voltage scanning electron microscope is disclosed, which includes: an electron source configured to generate an electron beam; an electron beam accelerator configured to accelerate the electron beam; a compound objective lens configured to converge the electron beams accelerated by the electron beam accelerator; a deflection device arranged between the inner wall of the magnetic lens and the optical axis of the electron beam and configured to deflect the electron beam; a detection device comprising a first sub-detection device for receiving secondary and backscattered electrons from the specimen, a second sub-detection device for receiving backscattered electrons, and a control device for changing the trajectories of the secondary electrons and the backscattered electrons; an electrostatic lens comprising the second sub-detection device, a specimen stage, and a control electrode for reducing the moving speed of the electron beam and changing the moving directions of the secondary and the backscattered electrons.

An ion implanter. The ion implanter may include a beamline, the beamline defining an inner wall, surrounding a cavity, the cavity arranged to conduct an ion beam. The ion implanter may also include a low emission insert, disposed on the inner wall, and further comprising a .sup.12C layer, the .sup.12C layer having an outer surface, facing the cavity.

The present invention prevents breakage of a chip by using a simple configuration even when an extraction-electrode power source cannot apply voltage to an extraction electrode due to a malfunction, etc. This charged particle beam device is provided with: a charged particle source; an extraction electrode that extracts charged particles from the charged particle source; an extraction-electrode power source that applies voltage to the extraction electrode; an accelerating electrode for accelerating the charged particles; an accelerating power source that applies voltage to the accelerating electrode; and a diode and a resistor which are connected in series between a middle stage of the accelerating power source and the output side of the extraction-electrode power source.