An apparatus for plasma processing that performs an etching on a workpiece, includes: a container; a gas supply system for supplying a processing gas into the container; a plasma source for exciting the processing gas; a support for holding the workpiece inside the container; an exhaust system for exhausting an internal space of the container; electrode plates provided on an inner wall of the container; insulators for electrically insulating the electrode plates from each other; a DC power supply for independently applying a DC voltage to each of the electrode plates; and a controller for controlling the gas supply system, the plasma source, and the DC power supply. The controller controls the gas supply system, the plasma source, and the DC power supply such that the DC voltage is supplied to each electrode plate during execution of the etching or after completion of the etching.

Methods include holding a sample with a movement stage configured to rotate the sample about a rotation axis, directing an imaging beam to a first sample location with the sample at a first rotational position about the rotation axis and detecting a first transmitted imaging beam image, rotating the sample using the movement stage about the rotation axis to a second rotational position, and directing the imaging beam to a second sample location by deflecting the imaging beam in relation to an optical axis of the imaging beam and detecting a second transmitted imaging beam image, wherein the second sample location is spaced apart from the first sample location at least at least in relation to the optical axis. Related systems and apparatus are also disclosed.

Apparatuses and methods for automated grid validation are disclosed herein. An example method at least includes imaging a grid, the grid including a support portion and a plurality of posts extending from the support portion, wherein each post of the plurality of posts has a designated weld location, and determining, based on the image, whether the designated weld location of each post of the plurality of posts is valid.

The focused ion beam apparatus includes: an electron beam column; a focused ion beam column; a sample stage; a coordinate acquisition unit configured to acquire, when a plurality of irradiation positions to which the focused ion beam is to be applied are designated on a sample, plane coordinates of each of the irradiation positions; a movement amount calculation unit configured to calculate, based on the plane coordinates, a movement amount by which the sample stage is to be moved to a eucentric height so that the eucentric height matches an intersection position at which the electron beam and the focused ion beam match each other at each of the irradiation positions; and a sample stage movement control unit configured to move, based on the movement amount, the sample stage to the eucentric height at each of the irradiation positions.

This charged particle gun has a bolt to which a charged particle source is attached, a nut that is screwed together with the bolt and thereby holds the charged particle source, and a nut seat surface in contact with the nut. The nut includes an inclination adjustment section whereby it is possible to adjust the angle of inclination of the charged particle source with respect to the nut seat surface, and a lock section that inhibits the nut and the bolt from becoming loose when screwed together. The inner surface of the nut has a screw thread section and a non-screw thread section with a larger inner diameter than the screw thread section. The inclination adjustment section has: a first slit formed so as to pass through an area from one part of the outer surface of the nut to one part of the non-screw thread section; an inclination adjustment screw; a first part positioned between the first slit and a second surface; a second part positioned between the first slit and a first surface; and a first screw hole that is screwed together with the inclination adjustment screw and formed so as to pass through an area from the first surface to the first slit in the second part.

A device comprises an electron column or an ion column, provided with an adjustable holder. The adjustable holder maintains the whole range of movements of the manipulation stage and is adapted to change its position in relation to the stage at least in one direction, wherein the range of movements of the manipulation stage is sufficient to change this position and it is unnecessary to install any other control drive or actuator.

A method includes forming a resist pattern, the resist pattern having trenches oriented lengthwise along a first direction and separated by resist walls along both the first direction and a second direction perpendicular to the first direction. The method further includes loading the resist pattern into an ion implanter so that a top surface of the resist pattern faces an ion travel direction, and tilting the resist pattern so that the ion travel direction forms a tilt angle with respect to an axis perpendicular to the top surface of the resist pattern. The method further includes rotating the resist pattern around the axis to a first position; implanting ions into the resist walls with the resist pattern at the first position; rotating the resist pattern around the axis by 180 degrees to a second position; and implanting ions into the resist walls with the resist pattern at the second position.

Provided is a charged particle beam apparatus including a focused ion beam column, a sample holder, a stage supporting the sample holder, a securing member rotating unit, a stage driving unit, and a control device. The sample holder includes a securing member fixing a sample. The securing member rotating unit rotates the securing member around a first rotational axis and a second rotational axis. The stage driving unit translates the stage in three dimensions and rotates the stage around a third rotational axis. The control device acquires a correction value for correcting a change in a position of a center of rotation for rotation around at least one among a first rotational axis, a second rotational axis, and a third rotational axis. The control device translates the stage according to the correction value.

A sensor may be used to measure a degree of tilt of a sample. The sensor may include an apparatus having a light source, first, second, and third optical elements, a lens, and an aperture. The first optical element may supply light from the light source toward the sample, and may supply light input into the first optical element from the sample toward the second optical element. The second optical element may supply light toward first and second sensing elements. An aperture may be arranged on a focal plane of the lens. A light beam incident on the first sensing element may be a reference beam.

A semiconductor manufacturing apparatus according to the present embodiment includes a stage on which a wafer can be placed. A separator separates a beam of impurities to be introduced into the wafer into an ion component and a neutral component. A controller switches the semiconductor manufacturing apparatus between a first mode and a second mode, where in the first mode, the ion component is introduced into the wafer and in the second mode, the neutral component is introduced into the wafer.