A substrate processing apparatus includes: a processing chamber configured to execute a processing on a substrate by an introduced gas; an exhaust chamber configured to exhaust a gas existing in the processing chamber; a partition plate having a plurality of gas passing holes for bringing the processing chamber and the exhaust chamber into communication with each other therethrough; a measuring instrument configured to measure a state in the processing chamber; a first pipe configured to connect the processing chamber and the measuring instrument; a second pipe configured to bring the exhaust chamber and the measuring instrument into communication with each other therethrough via a first valve; and a controller, wherein the controller is configured to control the substrate processing apparatus so as to control the first valve

A semiconductor device manufacturing system includes: a PL evaluation apparatus that evaluates wavelengths of photoluminescent light produced by individual optical modulators on a single semiconductor wafer; an electron beam drawing apparatus that draws patterns of diffraction gratings of laser sections that adjoin respective optical modulators on the wafer; and a calculation section that receives the wavelengths of the photoluminescent light from the PL evaluation apparatus, calculates densities of respective diffraction gratings so that differences between the wavelengths of the photoluminescent light and oscillating wavelengths of the laser sections become a constant, and sends the densities calculated to the electron beam drawing apparatus for drawing respective diffraction grating patterns on the respective laser sections.

A non-contact angle measuring apparatus includes a matter-wave and energy (MWE) particle source and a detector. The MWE particle source is used for generating boson or fermion particles. The detector is used for detecting a plurality peaks or valleys of an interference pattern generated by 1) the boson or fermion particles corresponding to a slit, a bump, or a hole of a first plane and 2) matter waves' wavefront-split associated with the boson or fermion particles reflected by a second plane, wherein angular locations of the plurality peaks or valleys of the interference pattern, a first distance between a joint region of the first plane and the second plane, and a second distance between the detector and the slit are used for deciding an angle between the first plane and the second plane.

Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a gas into the treatment space, and a plasma generating unit configured to generate plasma from the gas, wherein the support unit includes an electrostatic chuck including an upper body having a support surface that suctions the substrate and a lower body extending from the upper body to a lower side, wherein the lower body has an extension part extending laterally from the upper body, a focus ring disposed on the extension part of the electrostatic chuck, and a metallic ring provided between the upper body of the electrostatic chuck and the focus ring and configured to control plasma in an extreme edge of the substrate.

A method of using a Charged Particle Microscope, comprising: A specimen holder, for holding a specimen; A source, for producing an irradiating beam of charged particles; An illuminator, for directing said beam so as to irradiate the specimen; A detector, for detecting a flux of emergent radiation emanating from the specimen in response to said irradiation,
additionally comprising the following steps: In said illuminator, providing an aperture plate comprising an array of apertures; Using a deflecting device to scan said beam across said array, thereby alternatingly interrupting and transmitting the beam so as to produce a train of beam pulses; Irradiating said specimen with said train of pulses, and using said detector to perform positionally resolved (temporally discriminated) detection of the attendant emergent radiation.

A heater control system for a gas delivery system of a substrate processing system includes an oven, N resistive uninsulated heaters arranged inside of the oven, where N is an integer greater than one, and a controller. The oven encloses one or more components of the substrate processing system and to maintain a predetermined temperature in the oven. Each of the N resistive heaters selectively heats at least a portion of one of the components in the oven. The controller is configured to maintain the predetermined temperature in localized regions in the oven by determining a resistance in each of the N resistive heaters and adjusting power to each of the N resistive heaters based on N-1 resistance ratios of N-1 of the N resistive heaters relative to one of the N resistive heaters.

Mineral definitions each include a list of elements, each of the elements having a corresponding standard spectrum. To determine the composition of an unknown mineral sample, the acquired spectrum of the sample is sequentially decomposed into the standard spectra of the elements from the element list of each of the mineral definitions, and a similarity metric computed for each mineral definition. The unknown mineral is identified as the mineral having the best similarity metric.

Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl.sub.4), hydrogen (H.sub.2) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees Celsius; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.

Disclosed herein is a device for measuring a plasma ion density, which includes a transceiver antenna configured to apply and receive a microwave, of which a frequency is varied, to and from plasma, and a frequency analyzer configured to analyze a frequency of the microwave received from the transceiver antenna and measure a cut-off frequency, wherein the frequency of the microwave applied to the plasma is varied in the range of 100 kHz to 500 MHz.

A method of time-resolved pump-probe electron microscopy, comprises the steps of irradiating a sample (1) with a photonic pump pulse (2) being directed on a pump pulse path (3) from a photonic source to the sample (1), irradiating the sample (1) with an electron probe pulse (4) being directed on an electron pulse path (5) from an electron pulse source (10) to the sample (1), wherein the photonic pump pulse (2) and the electron probe pulse (4) arrive at the sample (1) with a predetermined temporal relationship relative to each other, and detecting a sample response to the electron probe pulse (4) irradiation with a detector device (20), wherein the photonic source comprises a photonic lattice structure (30) being arranged adjacent to the electron pulse path (5), and the photonic pump pulse (2) is created by an interaction of the electron probe pulse (4) with the photonic lattice structure (30). Furthermore, an electron microscopy apparatus, configured for time-resolved pump-probe electron microscopy, and a sample supply device (200) for an electron microscopy apparatus (100) are described.