In an etching method, a target object temperature is maintained within a range from −30° C. to 30° C. When a flow rate of an i.sup.th fluorocarbon gas in one or multiple fluorocarbon gases is referred to as J(i); a number of fluorine atoms and a number of carbon atoms in the corresponding gas are referred to as M(i) and N(i), respectively; a value calculated by summing J(i)×N(i)/M(i) of all values that i can be is referred to as Ua; a flow rate of a k.sup.th hydrogen-containing gas in one or multiple hydrogen-containing gases is referred to as J(k); a number of hydrogen atoms in the corresponding gas is referred to as H(k); and a value calculated by summing J(k)×H(k) of all values that k can be is referred to as Ub, Ua/Ub satisfies a condition of 0.04<Ua/Ub<0.22.

A sensor probe includes an elongated body defining an inner cavity having an inner diameter. A printed circuit board is configured to be fitted within the inner cavity. A first temperature-sensing integrated circuit mounted at a first end of the printed circuit board. A cap is mounted to a first end of the elongated body adjacent to the first temperature-sensing integrated circuit. A housing is configured to receive a second end of the elongated body, wherein the housing is configured to be mounted to a baseplate of a substrate support.

Embodiments disclosed herein include optical sensor systems and methods of using such systems. In an embodiment, the optical sensor system comprises a housing and an optical path through the housing. In an embodiment, the optical path comprises a first end and a second end. In an embodiment a reflector is at the first end of the optical path, and a lens is between the reflector and the second end of the optical path. In an embodiment, the optical sensor further comprises an opening through the housing between the lens and the reflector.

An ion implantation system has an ion source configured to form an ion beam. A mass analyzer mass analyzes the ion beam, a scanning element scans the ion beam in a horizontal direction and a parallelizing lens translates the fanned-out scanned beam into parallel shifting scanning ion beam. For applications needing not only a mean incident angle, but highly-aligned ion incident angles and a tight angular distribution, a slit apparatus is positioned at horizontal and/or vertical front focal points of the parallelizing lens. Minimum horizontal and/or vertical angular distributions of the ion beam on the workpiece are attained by controlling a beam focusing lens upstream of the scanning element for the best beam transmission through the slit system.

A wafer processing includes performing a process on the wafer, wherein the performing of the process on the wafer includes receiving a temperature profile and a heater profile, the temperature profile and the heater profile forming a pair with each other, calculating a combination profile based on the temperature profile and the heater profile, outputting a final profile based on the combination profile, and performing wafer processing by using a plasma based on the final profile.

A system includes a transparent crystal, at least part of which is embedded within a wall and a liner of a processing chamber. The transparent crystal has a proximal end and a distal end, the distal end having a distal surface exposed to an interior of the processing chamber. A transparent thin film is deposited on the distal surface and has chemical properties substantially matching those of the liner. A light coupling device is to: transmit light, from a light source, through the proximal end of the transparent crystal, and focus, into a spectrometer, light received reflected back from a combination of the distal surface, a surface of the transparent thin film, and a surface of a process film layer deposited on the transparent thin film. The spectrometer is to detect a first spectrum within the focused light that is representative of the process film layer.

A wafer holder includes a mounting table that has a mounting surface for a workpiece at a top, a supporting member that supports the mounting table from a lower side, a first cylindrical member one end of which is joined hermetically to a lower surface of the mounting table, and a second cylindrical member that is provided inside the first cylindrical member and one end of which is joined hermetically to the lower surface of the mounting table.

A plasma processing apparatus includes a processing chamber, a conductive annular member, a microwave radiating mechanism and a plasma detector. The processing chamber has a ceiling plate with an opening. The conductive annular member is disposed at the opening while being insulated from the ceiling plate. The microwave radiating mechanism is disposed on the ceiling plate to be coaxial with a center of the conductive annular member and configured to radiate microwaves into the processing chamber. Further, a plasma detector is connected to the conductive annular member and configured to detect a state of generated plasma.

A mask member is provided at an entrance opening of a mirror unit. Of a first diffraction grating and a second diffraction grating, when the second diffraction grating is used, the mask member masks preceding mirrors. With this process, aberration caused by reflective X-ray is suppressed. When the first diffraction grating is used, the mask member does not function. Alternatively, the mask member and another mask member may be selectively used.

A dry etching device which can be used to etch products or used in processes regardless of materials and exhibits an excellent accuracy, and a method for controlling the same. The dry etching device includes: an anode part; a cathode part disposed at an upper side of the anode part and facing the anode part, receiving bi-directional voltage power in which polarity of a voltage alternates between a positive voltage and a negative voltage depending on time, and spaced apart from the anode part; a leveling part disposed in close contact with a surface of the cathode part facing the anode part, and for positioning a work-piece in a flat state; a holding part for holding the work-piece and the leveling part to the surface of the cathode part facing the anode part; and a bi-directional voltage power supplier for applying the bi-directional voltage power to the cathode part.