This invention can maintain the temperature of the shaping plane in a three-dimensional layer-by-layer shaping apparatus. A three-dimensional layer-by-layer shaping apparatus includes a material spreader that spreads the material or materials of a three-dimensional layer-by-layer shaped object onto the shaping plane on which the three-dimensional layer-by-layer shaped object is to be shaped; an electron gun that generates an electron beam; at least one deflector that deflects the electron beam so that it scans the shaping plane one- or two-dimensionally; at least one lens that is positioned between the electron gun and the deflector, and focuses the electron beam; a focus controller that controls the focus of the electron beam based on which region is to be scanned by the electron beam; and a controller that controls the deflecting direction of the deflector and the scanning rate.

The present invention provides a technology for avoiding radiation of an ion beam at a position other than a desired processing position. A microstructure manufacturing method includes a step of radiating an ion beam to a sample; a step of supplying a gas to the sample; a step of stopping supplying the gas to the sample; and a step of stopping radiating the ion beam to the sample. The step of radiating the ion beam is performed earlier than the step of supplying the gas or the step of stopping supplying the gas is performed earlier than the step of stopping radiating the ion beam.

A test control port (TCP) includes a state machine SM, an instruction register IR, data registers DRs, a gating circuit and a TDO MX. The SM inputs TCI signals and outputs control signals to the IR and to the DR. During instruction or data scans, the IR or DRs are enabled to input data from TDI and output data to the TDO MX and the top surface TDO signal. The bottom surface TCI inputs may be coupled to the top surface TCO signals via the gating circuit. The top surface TDI signal may be coupled to the bottom surface TDO signal via TDO MX. This allows concatenating or daisy-chaining the IR and DR of a TCP of a lower die with an IR and DR of a TCP of a die stacked on top of the lower die.

A modulated beam moving stage device is used in electron-beam photolithography to create an optical device. The optical device can have varying pitch to increase angular selectivity to increase light entering an eyebox of a virtual-reality and/or an augmented-reality system.

A charged particle imaging apparatus comprising: A specimen holder, for holding a specimen; A particle-optical column, for: Producing a plurality of charged particle beams, by directing a progenitor charged particle beam onto an aperture plate having a corresponding plurality of apertures within a footprint of the progenitor beam; Directing said beams toward said specimen,
wherein: Said aperture plate comprises a plurality of different zones, which comprise mutually different aperture patterns, arranged within said progenitor beam footprint; The particle-optical column comprises a selector device, located downstream of said aperture plate, for selecting a beam array from a chosen one of said zones to be directed onto the specimen.

An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.

An apparatus and method for processing a workpiece with a beam is described. The apparatus includes a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam, and a scanner for translating the workpiece through the particle beam. The apparatus further includes a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner, and a beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing.

A computer-implemented method of generating scan instructions for forming a product using additive layer manufacture as a series of layers is provided. The method comprises determining a beam acceleration voltage to be used when forming the product; for each hatch area of layers of the product, determining a respective beam current to be used when forming the hatch area and providing a respective beam current value to the hatch area description in the scan pattern instruction file; and for each line of each hatch area, determining a respective beam spot size to be used when scanning the beam along the line and providing a respective beam spot size value to the line description in the scan pattern instruction file, and determining a respective series of beam step sizes and beam step dwell times to be used when scanning the beam along the line, and providing a respective series of beam position values and beam step dwell times to the line description in the scan pattern instruction file thereby defining how the beam is to be scanned along the line. Also provided are a file of scan instructions, an additive layer manufacture apparatus, and a method of forming a product using the additive layer manufacturing apparatus.

Various embodiments herein relate to methods and apparatus for performing anisotropic ion beam etching to form arrays of channels. The channels may be formed in semiconductor material, and may be used in a gate-all-around device. Generally speaking, a patterned mask layer is provided over a layer of semiconductor material. Ions are directed toward the substrate while the substrate is positioned in two particular orientations with respect to the ion trajectory. The substrate switches between these orientations such that ions impinge upon the substrate from two opposite angles. The patterned mask layer shadows/protects the underlying semiconductor material such that the channels are formed in intersecting shadowed regions.

A method for operating a multi-beam particle microscope which operates using a plurality of individual charged particle beams, wherein the method includes the following steps: measuring the beam current; determining a deviation of the measured beam current from a nominal beam current; decomposing the determined deviation into a drift component and into a high-frequency component; and controlling the high-frequency component of the beam current via a first closed-loop beam current control mechanism and/or compensating an effect of the high-frequency component on a recording quality of the multi-beam particle microscope using different mechanism than a closed-loop beam current control mechanism. An electrostatic control lens arranged in the beam generating system between extractor and anode can be used as first closed-loop beam current control mechanism. Adapting an extractor voltage of the beam generating system can be avoided.