The invention relates to charged particle beam generator comprising a charged particle source for generating a charged particle beam, a collimator system comprising a collimator structure with a plurality of collimator electrodes for collimating the charged particle beam, a beam source vacuum chamber comprising the charged particle source, and a generator vacuum chamber comprising the collimator structure and the beam source vacuum chamber within a vacuum, wherein the collimator system is positioned outside the beam source vacuum chamber. Each of the beam source vacuum chamber and the generator vacuum chamber may be provided with a vacuum pump.

An automatic adjustment method and an automatic adjustment device of a beam of a semiconductor apparatus, and a training method of a parameter adjustment model are provided. The automatic adjustment method of the beam of the semiconductor apparatus includes the following steps. The semiconductor apparatus generates the beam. A wave curve of the beam is obtained. The wave curve is segmented into several sections. The slope of each of the sections is obtained. Several environmental factors of the semiconductor apparatus are obtained. According to the slopes and the environmental factors, at least one parameter adjustment command of the semiconductor apparatus is analyzed through the parameter adjustment model.

A charged particle beam writing apparatus includes a writing data generation circuitry to input character information or information of an item selected, for specifying an apparatus quality check pattern used for evaluating apparatus quality of a charged particle beam writing apparatus, and to generate writing data of the apparatus quality check pattern based on the character information or the information of the item selected, and a combination circuitry to input writing data of an actual chip pattern to be written on a target object, and to combine the writing data of the actual chip pattern and the writing data of the apparatus quality check pattern such that the actual chip pattern and the apparatus quality check pattern do not overlap with each other.

A multiple charged particle beam writing apparatus includes a circuitry to calculate, for each of the plurality of combinations, a first distribution coefficient for each of the three beams configuring the combination concerned, for distributing a dose to irradiate the design grid concerned to the three beams such that the gravity center position of each distributed dose coincides with the position of the design grid concerned and the sum of the each distributed dose coincides with the dose to irradiate the design grid concerned; and a circuitry to calculate, for each of the four or more beams, a second distribution coefficient of each of the four or more beams relating to the design grid concerned by dividing the total value of at least one first distribution coefficient corresponding to the beam concerned in the four or more beams by the number of the plurality of combinations.

An ion source for improving beam transport efficiency regarding a ribbon beam is provided. The plasma generation container is formed with a beam extraction port at an end thereof. The shielding member plugs the beam extraction port and comprises three or more elongate holes each of which is long in a lateral direction of a ribbon beam to be extracted through the shielding member and which are arranged in the form of an array extending in the lateral direction, wherein a first length one of the elongate holes located in a central region of the array is shorter than a second length of one of the remaining elongate holes located on an end side of the array.

An ion implantation method includes: irradiating a wafer arranged to meet a predetermined plane channeling condition with an ion beam; measuring a predetermined characteristic on a surface of the wafer irradiated with the ion beam; and evaluating an implant angle distribution of the ion beam by using a result of measurement of the characteristic. The wafer may be arranged so as to include a channeling plane parallel to a predetermined reference plane parallel to a reference trajectory direction of the ion beam incident on the wafer and not to include a channeling plane perpendicular to the reference plane and parallel to the reference trajectory direction.

An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.

A charged particle beam system includes a charged particle source, an extraction electrode, a suppressor electrode, a first variable voltage supply for biasing the extraction electrode with an extraction voltage and a second variable voltage supply for biasing the suppressor electrode with a suppressor voltage.

A multiple charged particle beam writing apparatus includes a defective pattern data generation circuitry configured to generate defective pattern data of a defective pattern having a shape of the defective region in the writing region; a reverse pattern data generation circuitry configured to generate reverse pattern data by reversing the defective pattern data; a combined-value pixel data generation circuitry configured to generate, for the each pixel, combined-value pixel data by adding a value defined in a reverse pattern pixel data and a value defined in a writing pattern pixel data; and a writing mechanism configured to perform multiple writing, using multiple charged particle beams, on the target object such that the each pixel is irradiated with a beam of a dose corresponding to a value defined in the combined-value pixel data.

A semiconductor device and method is disclosed. In one example, the method for forming a semiconductor device includes forming a trench extending from a front side surface of a semiconductor substrate into the semiconductor substrate. The method includes forming of material to be structured inside the trench. Material to be structured is irradiated with a tilted reactive ion beam at a non-orthogonal angle with respect to the front side surface such that an undesired portion of the material to be structured is removed due to the irradiation with the tilted reactive ion beam while an irradiation of another portion of the material to be structured is masked by an edge of the trench.