A method includes etching a first region by plasma etching such that an upper surface of the first region is provided at a deeper position within a substrate than a second region; forming a deposit containing carbon on the substrate by forming plasma of a hydrocarbon gas inside a chamber of a plasma processing apparatus; and further etching the first region by plasma etching. In the forming of the plasma of the hydrocarbon gas, magnetic field distribution in which a horizontal component on an edge side of the substrate is larger than a horizontal component on a center of the substrate is formed by an electromagnet.

Carrier rings with radially-varied plasma impedance are provided herein. In some embodiments, a carrier ring may include an outer ring that holds a removable inner ring. The outer ring may be formed of a dielectric material such as ceramic. The inner ring may be formed of a metal such as aluminum to provide a desired impedance. In some other embodiments, a carrier ring is formed from a single piece with radially-varying impedances.

Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.

Whenever substrates are rotationally and continuously conveyed in a vacuum recipient around a common axis and past a magnetron sputter source, sputtering of the target, rotating around a central target axis, by the stationary magnetron plasma is adapted to the azimuthal extents radially differently spaced areas of the substrates become exposed to the target thereby improving homogeneity of deposited layer thickness on the substrates and ensuring that the complete sputter surface of the target is net-sputtered.

A doped nickel oxide target includes a nickel oxide substrate and a dopant doped therein. The dopant includes at least one compound that contains one or more elements of Cu, Ca, Cr, Sn, Hg, Pb, Mg, Mn, Ag, Co, and Pr.

A method for processing a workpiece, a plasma processing apparatus and a semiconductor device are provided. The method includes placing a workpiece including a spacer layer on a workpiece support in a chamber; selecting a composition modulation gas to modulate a volume ratio of carbon and fluorine to process the workpiece, the composition modulation gas includes one or more molecules, the volume ratio of carbon and fluorine is indicative of a distribution of carbon-based polymer deposited on the spacer layer; generating one or more species using one or more plasmas from a process gas to create a mixture, the process gas includes an etching gas and the composition modulation gas; and exposing the workpiece to the mixture to form a polymer layer on at least a portion of the spacer layer and to etch at least a portion of the spacer layer.

A method for processing a workpiece, a plasma processing apparatus, and a semiconductor device which relate to the field of semiconductor manufacturing are provided. The method includes: placing the workpiece on a workpiece support in a chamber, the workpiece includes an substrate, a portion of the substrate is exposed; performing a flushing process on the workpiece by generating one or more species using a plasma from a process gas to create a mixture, the workpiece is exposed to the mixture; and applying a bias power during the flushing process to form an oxide layer with a preset thickness on the portion of the substrate. In this way, an oxide layer with a preset thickness is obtained after the flushing process.

An assembly provided with a coolant flow channel includes a base in which the coolant flow channel is formed; and a protrusion component that is disposed in the coolant flow channel, wherein the protrusion component is liftable or rotatable.

Embodiments of the present disclosure generally relate to substrate supports for process chambers and RF grounding configurations for use therewith. Methods of grounding RF current are also described. A chamber body at least partially defines a process volume therein. A first electrode is disposed in the process volume. A pedestal is disposed opposite the first electrode. A second electrode is disposed in the pedestal. An RF filter is coupled to the second electrode through a conductive rod. The RF filter includes a first capacitor coupled to the conductive rod and to ground. The RF filter also includes a first inductor coupled to a feedthrough box. The feedthrough box includes a second capacitor and a second inductor coupled in series. A direct current (DC) power supply for the second electrode is coupled between the second capacitor and the second inductor.

A method includes applying a bond layer of a first chemical composition to a first surface of a first metal body. The metal body is of a second chemical composition. The method further includes disposing a second metal body of the second chemical composition against the first metal body such that the bond layer is between the first surface of the first metal body and a second surface of the second metal body. The metal bodies are resistant to diffusion bonding. The bond layer facilitates diffusion bonding of the metal bodies. The method further includes heating the first metal body and the second metal body. The method further includes applying pressure to press the second metal body against the first metal body. The method further includes generating a diffusion bond between the metal bodies, responsive to the heating and the applying of pressure for a duration.