The present disclosure provides a shielding mechanism and a thin-film-deposition equipment using the same, wherein the shielding mechanism includes two shield members and a driver. The driver includes a motor and a shaft seal. The motor interconnects the two shield members via the shaft seal, and such that to drive the two shield members to sway in opposite directions and to switch between an open state and a shielding state. Furthermore, each of the two shield members is formed with at least one cavity, for reducing weights thereof and loading of the motor and the driver.

The present disclosure provides a thin-film-deposition equipment, which includes a main body, a carrier and a shielding device, wherein a portion of the shielding device and the carrier are disposed within the main body. The main body includes a reaction chamber, and two sensor areas connected to the reaction chamber, wherein the sensor areas are smaller than the reaction chamber. The shielding device includes a first-shield member, a second-shield member and a driver. The driver interconnects the first-shield member and the second-shield member, for driving the first-shield member and the second-shield member to move in opposite directions. During a deposition process, the two shield members are separate from each other into an open state, and respectively enter the two sensor areas. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier.

Embodiments disclosed herein include a plasma source. In an embodiment, a plasma source comprises a dielectric body with a top surface, a bottom surface, and sidewall surfaces. In an embodiment, a plurality of holes pass through the dielectric body, where a first set of holes pass from the top surface to the bottom surface, and a second set of holes pass between opposite sidewall surfaces. In an embodiment, a housing is around the dielectric body, and a monopole antenna extending into the dielectric body.

A film forming apparatus for forming a film by magnetron sputtering includes a substrate support supporting the substrate, a holder holding a target for emitting sputtered particles, a magnet unit having a magnet, first and second movement mechanisms configured to periodically move the substrate support and the magnet unit, respectively, and a controller. The controller is configured to control the first movement mechanism and the second movement mechanism so that a phase in a periodic movement of the substrate support remains the same at a start of film formation and at an end of film formation, a phase in a periodic movement of the magnet unit remains the same at a start of film formation and at an end of film formation, and the phase in the periodic movement of the substrate support and the phase in the periodic movement of the magnet unit do not match during film formation.

Aspects of the disclosure provided herein generally provide a substrate processing system that includes: a processing chamber including: a top plate having an array of process station openings disposed therethrough surrounding a central axis, a bottom plate having a first central opening, and a plurality of side walls between the top plate and the bottom plate; a plurality of heaters disposed in the top plate and the bottom plate and configured in a plurality of regions; and a system controller configured to independently control the plurality of heaters in each region.

A power converter is capable to convert an electrical input power into a bipolar output power and to deliver the bipolar output power to at least two independent plasma processing chambers. The power converter includes: a power input port for connection to an electrical power delivering grid, at least two, preferably more than two, power output ports each for connection to one of the plasma process chambers, and a controller configured to control the power converter to deliver the bipolar output power to the power output ports, using one or more control parameters selected from a list comprising: power, voltage, current, excitation frequency, and threshold for protective measures, such that at least one of the control parameters at a first power output port is different from the corresponding control parameter at a different power output port.

A method of manufacturing a crystalline layer of material on a surface, the crystalline layer including lithium, at least one transition metal and at least one counter-ion. The method includes the following steps: generating a plasma using a remote plasma generator, plasma sputtering material from a first target including lithium onto a surface of or supported by a substrate, there being at least a first plume corresponding to trajectories of particles from the first target onto the surface, and plasma sputtering material from a second target including at least one transition metal onto the surface, there being at least a second plume corresponding to trajectories of particles from the second target onto the surface. The first target is positioned to be non-parallel with the second target, the first plume and the second plume converge at a region proximate to the surface of or supported by the substrate, and the crystalline layer is formed on the surface at the region.

A substrate processing method includes forming an adsorption layer on a substrate by supplying a silicon-containing gas to the substrate; performing a modification by generating plasma containing He; and generating plasma of a reaction gas to cause the plasma to react with the adsorption layer, wherein the forming the adsorption layer, the performing the modification, and the generating the plasma are repeated to form a silicon-containing film.

Provided is a technique including: a processing chamber that processes a substrate; a first gas supplier that supplies a metal-containing gas into the processing chamber; a second gas supplier that supplies a first oxygen-containing gas into the processing chamber; and an exhauster including a gas exhaust pipe and a trap that collects a component of the metal-containing gas contained in an exhaust gas using plasma, the exhauster discharging the exhaust gas from the processing chamber.

A deposition system is provided capable of controlling an amount of a target material deposited on a substrate and/or direction of the target material that is deposited on the substrate. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, wherein a length of at least one of the plurality of hollow structures is adjustable.