A cleaning agent composition for use in removing an adhesive residue, characterized in that the composition contains a quaternary ammonium salt and a composition solvent including a first organic solvent and a second organic solvent; the first organic solvent is an amide derivative represented by formula (Z) (wherein R.sup.0 represents an ethyl group, a propyl group, or an isopropyl group; and each of R.sup.A and R.sup.B represents a C1 to C4 alkyl group); the second organic solvent is a non-amide organic solvent other than the amide derivative; and the composition has a water content less than 4.0 mass %.

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A method of forming a semiconductor structure is provided. The method includes forming a gate structure over an active region of a substrate, forming an epitaxial layer comprising first dopants of a first conductivity type over portions of the active region on opposite sides of the gate structure, the epitaxial layer, applying a cleaning solution comprising ozone and deionized water to the epitaxial layer, thereby forming an oxide layer on the epitaxial layer, forming a patterned photoresist layer over the oxide layer and the gate structure to expose a portion of the oxide layer, forming a contact region second dopants of a second conductivity type opposite the first conductivity type in the portion of the epitaxial layer not covered by the patterned photoresist layer, and forming a contact overlying the contact region.

The disclosure provides a pattern collapse free wet clean process for fabricating semiconductor devices. By performing post reactive ion etching (RIE) using a fluorine-containing gas such as C.sub.2F.sub.6, followed by cleaning in a single wafer cleaner (SWC) with diluted hydrofluoric acid (HF) or in a solution of ammonia and HF, a substrate with multiple pattern collapse free high aspect ratio shallow trench isolation (STI) features can be obtained.

A method comprises providing a substrate comprising an n-type Al/In/GaN semiconductor material. A surface of the substrate is dry-etched to form a trench therein and cause dry-etch damage to remain on the surface. The surface of the substrate is immersed in an electrolyte solution and illuminated with above bandgap light having a wavelength that generates electron-hole pairs in the n-type Al/In/GaN semiconductor material, thereby photoelectrochemically etching the surface to remove at least a portion of the dry-etch damage.

A method for making a semiconductor device may include forming shallow trench isolation (STI) regions in a semiconductor substrate defining an active region therebetween in the semiconductor substrate and a pad oxide on the active region. The method may further include removing at least some of the pad oxide, cleaning the active region to expose an upper surface thereof and define rounded shoulders of the active region adjacent the STI regions having an interior angle of at least 125°, and forming a superlattice on the active region. The superlattice may include a plurality of stacked groups of layers, each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming a semiconductor circuit including the superlattice.

Proposed are a method and a system for removing L-FC in a plasma etching process, in which L-FC, which is condensed on a wafer, an electrode, a substrate, a head, or the like, is removed by using infrared or ultraviolet rays in a plasma etching process using an L-FC precursor.

The present invention relates to a substrate cleaning system and a substrate cleaning method for cleaning a substrate. The substrate cleaning system (50) includes a heater (51), a chemical-liquid diluting module (52), and a cleaning module. A temperature of the diluted-chemical-liquid mixed by the chemical-liquid diluting module (52) is determined to be higher than normal a temperature and lower than a glass transition point of a cleaning member. The cleaning member scrubs the substrate (W) with the diluted chemical liquid having the determined temperature supplied to the substrate (W).

The present disclosure relates to a method for at least one of forming a part or modifying a part, and a system therefor. The method involves initially providing a planar structure having a first material layer disposed on a second material layer. A lithographic operation including greyscale printing is performed to produce a resist material layer on the first material layer, with the resist material layer having a predetermined three-dimensional pattern extending along X, Y and Z axes, with features helping to define the three-dimensional pattern having differing dimensions along the Z axis, and which acts as a mask. An etch process is then performed, using the mask provided by the resist material layer, to etch the first material layer to impart the pattern of the mask as an etched pattern into the first material layer in accordance with a predetermined selectivity etching ratio, such that the etched pattern in the first material layer includes features formed with greater dimensions than corresponding features in the mask of the resist material layer.

A method for processing a semiconductor structure includes: a substrate is provided, which has feature parts, in which an aspect ratio of the feature parts is greater than a preset aspect ratio, a barrier layer is disposed on tops of the feature parts, a hydrophilic layer is disposed on side walls of the feature parts, and there are particulate impurities on a surface of the hydrophilic layer; at least one cleaning treatment to the substrate is performed, in which the cleaning treatment includes: initial water vapor is introduced to the side walls of the feature parts, and a cooling treatment is performed to liquefy the initial water vapor adhering to a surface of the hydrophilic layer into water which carries the particulate impurities and flows into grooves; and a heating treatment is performed to evaporate the water into water vapor which carries the particulate impurities and escapes.

In a method of manufacturing a semiconductor device, a first fin structure, a second fin structure, a first wall fin structure and a second wall fin structure are formed over a substrate. The first and second fin structures are disposed between the first and second wall fin structures, and lower portions of the first and second fin structures and the first and second wall fin structures are embedded in the isolation insulating layer and upper portions thereof are exposed from the isolation insulating layer. A sidewall spacer layer is formed on sidewalls of the first and second fin structures. Source/drain regions of the first and second fin structures are recessed. An epitaxial source/drain structure is formed over the recessed first and second fin structures. A width W1 of the first and second fin structures is smaller than a thickness W2 of the sidewall spacer layer.